Fairchild/ON Semiconductor FDMS8023S
- Part Number:
- FDMS8023S
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2486423-FDMS8023S
- Description:
- MOSFET N-CH 30V POWER56
- Datasheet:
- FDMS8023S
Fairchild/ON Semiconductor FDMS8023S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS8023S.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time18 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Weight68.1mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®, SyncFET™
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PDSO-F5
- Number of Elements1
- Power Dissipation-Max2.5W Ta 59W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation59W
- Case ConnectionDRAIN
- Turn On Delay Time12 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2.4m Ω @ 26A, 10V
- Vgs(th) (Max) @ Id3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds3550pF @ 15V
- Current - Continuous Drain (Id) @ 25°C26A Ta 49A Tc
- Gate Charge (Qg) (Max) @ Vgs57nC @ 10V
- Rise Time5ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)4 ns
- Turn-Off Delay Time32 ns
- Continuous Drain Current (ID)49A
- Threshold Voltage1.7V
- JEDEC-95 CodeMO-240AA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)26A
- Drain-source On Resistance-Max0.0024Ohm
- Drain to Source Breakdown Voltage30V
- Nominal Vgs1.7 V
- Height1.05mm
- Length5mm
- Width6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
FDMS8023S Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3550pF @ 15V.This device has a continuous drain current (ID) of [49A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.A device's drain current is its maximum continuous current, and this device's drain current is 26A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 32 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1.7V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
FDMS8023S Features
a continuous drain current (ID) of 49A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 32 ns
a threshold voltage of 1.7V
FDMS8023S Applications
There are a lot of ON Semiconductor
FDMS8023S applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3550pF @ 15V.This device has a continuous drain current (ID) of [49A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.A device's drain current is its maximum continuous current, and this device's drain current is 26A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 32 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1.7V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
FDMS8023S Features
a continuous drain current (ID) of 49A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 32 ns
a threshold voltage of 1.7V
FDMS8023S Applications
There are a lot of ON Semiconductor
FDMS8023S applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
FDMS8023S More Descriptions
Trans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R - Tape and Reel
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The FDMS8023S has been designed to minimize losses in power conversion application. Advancements in both Silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The FDMS8023S has been designed to minimize losses in power conversion application. Advancements in both Silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
The three parts on the right have similar specifications to FDMS8023S.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusPublishedResistanceLead FreeContact PlatingReach Compliance CodeNumber of ChannelsPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Drain to Source Voltage (Vdss)View Compare
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FDMS8023SACTIVE (Last Updated: 1 day ago)18 WeeksSurface MountSurface Mount8-PowerTDFN868.1mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™e3yesActive1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALFLAT26030R-PDSO-F512.5W Ta 59W TcSingleENHANCEMENT MODE59WDRAIN12 nsN-ChannelSWITCHING2.4m Ω @ 26A, 10V3V @ 1mA3550pF @ 15V26A Ta 49A Tc57nC @ 10V5ns4.5V 10V±20V4 ns32 ns49A1.7VMO-240AA20V26A0.0024Ohm30V1.7 V1.05mm5mm6mmNo SVHCNoROHS3 Compliant----------
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ACTIVE (Last Updated: 2 days ago)18 WeeksSurface MountSurface Mount8-PowerTDFN868.1mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUAL---R-PDSO-N512.5W Ta 78W TcSingleENHANCEMENT MODE2.5WDRAIN17 nsN-ChannelSWITCHING2.8m Ω @ 25A, 10V3V @ 250μA5565pF @ 15V25A Ta 42A Tc84nC @ 10V9ns4.5V 10V±20V7 ns37 ns25A1.9VMO-240AA20V--30V1.9 V1.05mm5mm6mmNo SVHCNoROHS3 Compliant20072.8MOhmLead Free------
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ACTIVE (Last Updated: 3 days ago)13 WeeksSurface MountSurface Mount8-PowerTDFN856.5mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)5EAR99-FET General Purpose PowerMOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIEDNOT SPECIFIEDR-PDSO-N512.7W Ta 156W TcSingleENHANCEMENT MODE-DRAIN43 nsN-ChannelSWITCHING1.65m Ω @ 32A, 10V4.5V @ 250μA11530pF @ 30V32A Ta 155A Tc154nC @ 10V27ns8V 10V±20V11 ns42 ns155A-MO-240AA20V32A-60V-1.05mm5.1mm6.25mm--ROHS3 Compliant2010--Tinnot_compliant1320A937 mJ-
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ACTIVE, NOT REC (Last Updated: 2 days ago)6 WeeksSurface MountSurface Mount8-PowerTDFN856.5mg--55°C~175°C TJTape & Reel (TR)PowerTrench®e3yesNot For New Designs1 (Unlimited)-EAR99Tin (Sn)-MOSFET (Metal Oxide)--260NOT SPECIFIED--3.3W Ta 180W TcSingle----N-Channel-0.65m Ω @ 55A, 10V3V @ 750μA22610pF @ 15V55A Ta 423A Tc285nC @ 10V-4.5V 10V±20V--423A------------ROHS3 Compliant2017-Lead Free-not_compliant---30V
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