Fairchild/ON Semiconductor FDMS3672

Name: FDMS3672
Brand: Fairchild/ON Semiconductor
SKU: 2479320-FDMS3672
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMS3672

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2479320-FDMS3672

Description:: MOSFET N-CH 100V 7.4A POWER56-8

ECAD Model:

Datasheet:: FDMS3672

Specifications

Fairchild/ON Semiconductor FDMS3672 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS3672.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
10 Weeks
Contact Plating
Gold
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
UltraFET™
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
23MOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Current Rating
22A
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Voltage
100V
Power Dissipation-Max
2.5W Ta 78W Tc
Current
22A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Case Connection
DRAIN
Turn On Delay Time
23 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
23m Ω @ 7.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2680pF @ 50V
Current - Continuous Drain (Id) @ 25°C
7.4A Ta 22A Tc
Gate Charge (Qg) (Max) @ Vgs
44nC @ 10V
Rise Time
11ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
8 ns
Turn-Off Delay Time
36 ns
Continuous Drain Current (ID)
7.4A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Height
750μm
Length
5mm
Width
6mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDMS3672 Description
FDMS3672 is a 100V N-Channel UltraFET Trench MOSFET. The onsemi FDMS3672 combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total, and Miller gate charge, the FDMS3672 is ideal for high-frequency DC-to-DC converters. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET FDMS3672 is in the Power-56-8 package with 2.5W power dissipation.

FDMS3672 Features
Maximum RDS(on) = 23 mΩ at VGS = 10V, ID = 7.4A
Maximum RDS(on) = 29 mΩ at VGS= 6V, ID = 6.6A
Typical Qg = 31 nC at VGS = 10 V
Low Miller Charge
Optimized efficiency at high frequencies

FDMS3672 Applications
cellular phones
laptop computers
photovoltaic systems
wind turbines
shunt voltage regulator and the series voltage regulator

FDMS3672 More Descriptions

N-Channel UltraFET Trench MOSFET 100V, 22A, 23mΩ
100V, 22A,23 OHM, NCH ULTRAFET TRENCH MOSFET - 8LD,MLP,DUAL,NON-JEDEC, 5X6MM
N-Channel 100 V 23 mOhm Surface Mount Power UltraFET Trench Mosfet - Power 56
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC-to-DC converters.
MOSFET, N, SMD, MLP; Transistor Type:UltraFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:7.4A; Resistance, Rds On:0.023ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3.1V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:30A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS3672; Voltage, Vds Max:100V; Voltage, Vgs th Max:4V

Product Comparison

The three parts on the right have similar specifications to FDMS3672.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Current Rating

Number of Elements

Configuration

Voltage

Power Dissipation-Max

Current

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Weight

Published

Terminal Finish

JESD-30 Code

Element Configuration

Threshold Voltage

JEDEC-95 Code

Nominal Vgs

REACH SVHC

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Number of Channels

Terminal Form

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

FET Feature

View Compare
FDMS3672

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

10 Weeks

Gold

Surface Mount

Surface Mount

8-PowerWDFN

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

UltraFET™

e4

yes

Active

1 (Unlimited)

8

EAR99

23MOhm

FET General Purpose Power

100V

MOSFET (Metal Oxide)

DUAL

22A

1

SINGLE WITH BUILT-IN DIODE

100V

2.5W Ta 78W Tc

22A

ENHANCEMENT MODE

2.5W

DRAIN

23 ns

N-Channel

SWITCHING

23m Ω @ 7.4A, 10V

4V @ 250μA

2680pF @ 50V

7.4A Ta 22A Tc

44nC @ 10V

11ns

6V 10V

±20V

8 ns

36 ns

7.4A

20V

100V

750μm

5mm

6mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDMS7660

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

18 Weeks

-

Surface Mount

Surface Mount

8-PowerTDFN

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

5

EAR99

2.8MOhm

FET General Purpose Power

-

MOSFET (Metal Oxide)

DUAL

-

1

-

-

2.5W Ta 78W Tc

-

ENHANCEMENT MODE

2.5W

DRAIN

17 ns

N-Channel

SWITCHING

2.8m Ω @ 25A, 10V

3V @ 250μA

5565pF @ 15V

25A Ta 42A Tc

84nC @ 10V

9ns

4.5V 10V

±20V

7 ns

37 ns

25A

20V

30V

1.05mm

5mm

6mm

No

ROHS3 Compliant

Lead Free

68.1mg

2007

Tin (Sn)

R-PDSO-N5

Single

1.9V

MO-240AA

1.9 V

No SVHC

-

-

-

-

-

-

-

-

FDMS3672 vs FDMS7660
FDMS86550ET60

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

12 Weeks

-

Surface Mount

Surface Mount

8-PowerTDFN

8

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

-

EAR99

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

3.3W Ta 187W Tc

-

-

-

-

43 ns

N-Channel

-

1.65m Ω @ 32A, 10V

4.5V @ 250μA

8235pF @ 30V

32A Ta 245A Tc

154nC @ 10V

27ns

8V 10V

±20V

11 ns

42 ns

245A

20V

60V

-

-

-

-

ROHS3 Compliant

Lead Free

56.5mg

-

Tin (Sn)

-

Single

-

-

-

-

260

not_compliant

NOT SPECIFIED

1

-

-

-

-

FDMS3672 vs FDMS86550ET60
FDMS8570SDC

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 week ago)

-

-

Surface Mount

Surface Mount

8-PowerTDFN

8

SILICON

-55°C~150°C TJ

Digi-Reel®

PowerTrench®, SyncFET™

e3

yes

Obsolete

1 (Unlimited)

5

EAR99

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

DUAL

-

1

-

-

3.3W Ta 59W Tc

-

ENHANCEMENT MODE

59W

DRAIN

11 ns

N-Channel

SWITCHING

2.8m Ω @ 28A, 10V

2.2V @ 1mA

2825pF @ 13V

28A Ta 60A Tc

42nC @ 10V

4ns

4.5V 10V

±12V

3 ns

33 ns

60A

12V

25V

-

-

-

No

RoHS Compliant

-

90mg

2017

Tin (Sn)

R-PDSO-F5

Single

1.5V

MO-240AA

-

No SVHC

-

-

-

-

FLAT

100A

45 mJ

Schottky Diode (Body)

FDMS3672 vs FDMS8570SDC