Fairchild/ON Semiconductor FDMS3662

Name: FDMS3662
Brand: Fairchild/ON Semiconductor
SKU: 2484405-FDMS3662
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMS3662

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2484405-FDMS3662

Description:: MOSFET N-CH 100V 8.9A POWER56

ECAD Model:

Datasheet:: FDMS3662

Specifications

Fairchild/ON Semiconductor FDMS3662 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS3662.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
10 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
68.1mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Resistance
14.8MOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Power Dissipation-Max
2.5W Ta 104W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Case Connection
DRAIN
Turn On Delay Time
25 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
14.8m Ω @ 8.9A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4620pF @ 50V
Current - Continuous Drain (Id) @ 25°C
8.9A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs
75nC @ 10V
Rise Time
15ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
6 ns
Turn-Off Delay Time
32 ns
Continuous Drain Current (ID)
8.9A
Threshold Voltage
3.5V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
49A
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
90A
Nominal Vgs
3.5 V
Height
1.05mm
Length
5mm
Width
6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDMS3662 Description
The FDMS3662 N-Channel MOSFET is made with Fairchild Semiconductor's innovative Power Trench process, which is specifically designed to reduce on-state resistance while maintaining exceptional switching performance.
FDMS3662 Features
At Vgs = 10V, Id = 8.9A, Maxds(o n) = 14.8mQ. MSL1 durable package design with advanced packaging and silicon combination for low rDS(on). Compliant with RoHS
FDMS3662 Applications
DC - DC Con version

FDMS3662 More Descriptions

N-Channel PowerTrench® MOSFET 100V, 39A, 14.8mΩ
MOSFET, N CH, 100V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0114ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Product Comparison

The three parts on the right have similar specifications to FDMS3662.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Subcategory

Technology

Terminal Position

Terminal Form

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Published

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Number of Channels

JEDEC-95 Code

Avalanche Energy Rating (Eas)

Terminal Finish

FET Feature

Drain to Source Voltage (Vdss)

View Compare
FDMS3662

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

10 Weeks

Tin

Surface Mount

Surface Mount

8-PowerTDFN

8

68.1mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

5

EAR99

14.8MOhm

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

R-PDSO-F5

1

2.5W Ta 104W Tc

Single

ENHANCEMENT MODE

2.5W

DRAIN

25 ns

N-Channel

SWITCHING

14.8m Ω @ 8.9A, 10V

4.5V @ 250μA

4620pF @ 50V

8.9A Ta 49A Tc

75nC @ 10V

15ns

10V

±20V

6 ns

32 ns

8.9A

3.5V

20V

49A

100V

90A

3.5 V

1.05mm

5mm

6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
FDMS86550

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

13 Weeks

Tin

Surface Mount

Surface Mount

8-PowerTDFN

8

56.5mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

5

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

NO LEAD

R-PDSO-N5

1

2.7W Ta 156W Tc

Single

ENHANCEMENT MODE

-

DRAIN

43 ns

N-Channel

SWITCHING

1.65m Ω @ 32A, 10V

4.5V @ 250μA

11530pF @ 30V

32A Ta 155A Tc

154nC @ 10V

27ns

8V 10V

±20V

11 ns

42 ns

155A

-

20V

32A

60V

320A

-

1.05mm

5.1mm

6.25mm

-

-

ROHS3 Compliant

-

2010

NOT SPECIFIED

not_compliant

NOT SPECIFIED

1

MO-240AA

937 mJ

-

-

-

FDMS3662 vs FDMS86550
FDMS8570SDC

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 week ago)

-

-

Surface Mount

Surface Mount

8-PowerTDFN

8

90mg

SILICON

-55°C~150°C TJ

Digi-Reel®

PowerTrench®, SyncFET™

e3

yes

Obsolete

1 (Unlimited)

5

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

R-PDSO-F5

1

3.3W Ta 59W Tc

Single

ENHANCEMENT MODE

59W

DRAIN

11 ns

N-Channel

SWITCHING

2.8m Ω @ 28A, 10V

2.2V @ 1mA

2825pF @ 13V

28A Ta 60A Tc

42nC @ 10V

4ns

4.5V 10V

±12V

3 ns

33 ns

60A

1.5V

12V

-

25V

100A

-

-

-

-

No SVHC

No

RoHS Compliant

-

2017

-

-

-

-

MO-240AA

45 mJ

Tin (Sn)

Schottky Diode (Body)

-

FDMS3662 vs FDMS8570SDC
FDMS8050ET30

Fairchild/ON Semiconductor

ACTIVE, NOT REC (Last Updated: 2 days ago)

6 Weeks

-

Surface Mount

Surface Mount

8-PowerTDFN

8

56.5mg

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Not For New Designs

1 (Unlimited)

-

EAR99

-

-

MOSFET (Metal Oxide)

-

-

-

-

3.3W Ta 180W Tc

Single

-

-

-

-

N-Channel

-

0.65m Ω @ 55A, 10V

3V @ 750μA

22610pF @ 15V

55A Ta 423A Tc

285nC @ 10V

-

4.5V 10V

±20V

-

-

423A

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

2017

260

not_compliant

NOT SPECIFIED

-

-

-

Tin (Sn)

-

30V

FDMS3662 vs FDMS8050ET30