Fairchild/ON Semiconductor FDMS3572

Name: FDMS3572
Brand: Fairchild/ON Semiconductor
SKU: 2478761-FDMS3572
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMS3572

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478761-FDMS3572

Description:: MOSFET N-CH 80V 8.8A POWER56

ECAD Model:

Datasheet:: FDMS3572

Specifications

Fairchild/ON Semiconductor FDMS3572 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS3572.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
6 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Number of Pins
8
Weight
210mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
UltraFET™
Published
2006
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Subcategory
FET General Purpose Power
Voltage - Rated DC
80V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
22A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
2.5W Ta 78W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
11 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
16.5m Ω @ 8.8A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2490pF @ 40V
Current - Continuous Drain (Id) @ 25°C
8.8A Ta 22A Tc
Gate Charge (Qg) (Max) @ Vgs
40nC @ 10V
Rise Time
13ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
12 ns
Turn-Off Delay Time
24 ns
Continuous Drain Current (ID)
8.8A
Threshold Voltage
3.2V
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.029Ohm
Drain to Source Breakdown Voltage
80V
Pulsed Drain Current-Max (IDM)
50A
Height
750μm
Length
5mm
Width
6mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDMS3572 Description FDMS3572 is a UItraFET Trench? N-channel MOSFET combining characteristics that enable benchmark efficiency when it comes to power conversion applications. It has been optimized for high RDS (ON), low ESR, and low total, and Miller gate charges. It is an ideal DC-to-DC converter for use in high-frequency DC-to-DC applications.
FDMS3572 Features RoHS Compliant
Low Miller Charge
Max rDS(on) = 16.5 m|? at VGS = 10 V, ID = 8.8 A
Max rDS(on) = 24 m|? at VGS = 6 V, ID = 8.4 A
Typ Qg = 28 nC at VGS = 10 V
Optimized efficiency at high frequencies
FDMS3572 Applications Industrial
Power Management
DC/DC converter
Load switch

FDMS3572 More Descriptions

N-Channel UltraFET Trench® MOSFET 80V, 22A, 16.5mΩ
Trans MOSFET N-CH Si 80V 8.8A 8-Pin WDFN EP T/R / MOSFET N-CH 80V 8.8A POWER56
MOSFET, N, SMD, MLP; Transistor Polarity:N Channel; Continuous Drain Current Id:8.8A; Drain Source Voltage Vds:80V; On Resistance Rds(on):16.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.2V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:8.8A; Package / Case:Power 56; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:FDMS3572; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Product Comparison

The three parts on the right have similar specifications to FDMS3572.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

RoHS Status

Lead Free

Reach Compliance Code

Drain to Source Voltage (Vdss)

JESD-30 Code

Case Connection

Transistor Application

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Radiation Hardening

Contact Plating

Avalanche Energy Rating (Eas)

View Compare
FDMS3572

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

6 Weeks

Surface Mount

Surface Mount

8-PowerWDFN

8

210mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

UltraFET™

2006

e4

yes

Active

1 (Unlimited)

8

EAR99

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

FET General Purpose Power

80V

MOSFET (Metal Oxide)

DUAL

NO LEAD

NOT SPECIFIED

22A

NOT SPECIFIED

Not Qualified

1

2.5W Ta 78W Tc

Single

ENHANCEMENT MODE

2.5W

11 ns

N-Channel

16.5m Ω @ 8.8A, 10V

4V @ 250μA

2490pF @ 40V

8.8A Ta 22A Tc

40nC @ 10V

13ns

6V 10V

±20V

12 ns

24 ns

8.8A

3.2V

20V

0.029Ohm

80V

50A

750μm

5mm

6mm

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
FDMS8350LET40

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

12 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

56.5mg

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

e3

yes

Active

1 (Unlimited)

-

EAR99

Tin (Sn)

-

-

MOSFET (Metal Oxide)

-

-

260

-

NOT SPECIFIED

-

-

3.33W Ta 125W Tc

Single

-

-

-

N-Channel

0.85m Ω @ 47A, 10V

3V @ 250μA

16590pF @ 20V

49A Ta 300A Tc

219nC @ 10V

-

4.5V 10V

±20V

-

-

300A

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

not_compliant

40V

-

-

-

-

-

-

-

-

FDMS3572 vs FDMS8350LET40
FDMS86310

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

13 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

68.1mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

e3

yes

Active

1 (Unlimited)

5

EAR99

Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

DUAL

FLAT

-

-

-

-

1

2.5W Ta 96W Tc

Single

ENHANCEMENT MODE

96W

28 ns

N-Channel

4.8m Ω @ 17A, 10V

4.5V @ 250μA

6290pF @ 40V

17A Ta 50A Tc

95nC @ 10V

23ns

8V 10V

±20V

9 ns

35 ns

17A

-

20V

-

80V

-

1.05mm

5.1mm

5.85mm

-

ROHS3 Compliant

Lead Free

-

-

R-PDSO-F5

DRAIN

SWITCHING

MO-240AA

50A

No

-

-

FDMS3572 vs FDMS86310
FDMS0312AS

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

26 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

74mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®, SyncFET™

-

e3

yes

Active

1 (Unlimited)

5

EAR99

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

DUAL

FLAT

NOT SPECIFIED

-

NOT SPECIFIED

-

1

2.5W Ta 36W Tc

Single

ENHANCEMENT MODE

-

10 ns

N-Channel

5m Ω @ 18A, 10V

3V @ 1mA

1815pF @ 15V

18A Ta 22A Tc

31nC @ 10V

2.3ns

4.5V 10V

±20V

6 ns

25 ns

18A

-

20V

0.005Ohm

30V

100A

1mm

6mm

5mm

-

ROHS3 Compliant

-

not_compliant

-

R-PDSO-F5

DRAIN

SWITCHING

MO-240AA

22A

-

Tin

33 mJ

FDMS3572 vs FDMS0312AS