Fairchild/ON Semiconductor FDMC7582
- Part Number:
- FDMC7582
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2482494-FDMC7582
- Description:
- MOSFET N-CH 25V 16.7A 8-PQFN
- Datasheet:
- FDMC7582
Fairchild/ON Semiconductor FDMC7582 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC7582.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Weight32.13mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- JESD-30 CodeS-PDSO-N5
- Number of Elements1
- Power Dissipation-Max2.3W Ta 52W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Case ConnectionDRAIN
- Turn On Delay Time8.8 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5m Ω @ 16.7A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1795pF @ 13V
- Current - Continuous Drain (Id) @ 25°C16.7A Ta 49A Tc
- Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
- Rise Time2ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)1.6 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)16.7A
- JEDEC-95 CodeMO-229
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)49A
- Drain-source On Resistance-Max0.005Ohm
- Drain to Source Breakdown Voltage25V
- Pulsed Drain Current-Max (IDM)60A
- Height1.05mm
- Length3.3mm
- Width3.3mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
FDMC7582 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1795pF @ 13V.This device has a continuous drain current (ID) of [16.7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=25V, the drain-source breakdown voltage is 25V.A device's drain current is its maximum continuous current, and this device's drain current is 49A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 20 ns.A maximum pulsed drain current of 60A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
FDMC7582 Features
a continuous drain current (ID) of 16.7A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 60A.
FDMC7582 Applications
There are a lot of ON Semiconductor
FDMC7582 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1795pF @ 13V.This device has a continuous drain current (ID) of [16.7A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=25V, the drain-source breakdown voltage is 25V.A device's drain current is its maximum continuous current, and this device's drain current is 49A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 20 ns.A maximum pulsed drain current of 60A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8.8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
FDMC7582 Features
a continuous drain current (ID) of 16.7A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 60A.
FDMC7582 Applications
There are a lot of ON Semiconductor
FDMC7582 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
FDMC7582 More Descriptions
N-Channel 25 V 5 mOhm 28 nC Surface Mount PowerTrench Mosfet -Power-33
Power Field-Effect Transistor, 16.7A I(D), 25V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Power Field-Effect Transistor, 16.7A I(D), 25V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
The three parts on the right have similar specifications to FDMC7582.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthRadiation HardeningRoHS StatusPublishedResistanceAdditional FeatureDrain to Source Voltage (Vdss)Threshold VoltageREACH SVHCLead FreeContact PlatingTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusNumber of ChannelsMax Junction Temperature (Tj)Nominal VgsView Compare
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FDMC7582ACTIVE (Last Updated: 6 days ago)10 WeeksSurface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALS-PDSO-N512.3W Ta 52W TcSingleENHANCEMENT MODE2.5WDRAIN8.8 nsN-ChannelSWITCHING5m Ω @ 16.7A, 10V2.5V @ 250μA1795pF @ 13V16.7A Ta 49A Tc28nC @ 10V2ns4.5V 10V±20V1.6 ns20 ns16.7AMO-22920V49A0.005Ohm25V60A1.05mm3.3mm3.3mmNoROHS3 Compliant----------------
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ACTIVE (Last Updated: 5 days ago)23 WeeksSurface MountSurface Mount8-PowerWDFN8200mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)5EAR99Nickel/Palladium/Gold (Ni/Pd/Au)Other TransistorsMOSFET (Metal Oxide)DUALS-PDSO-N512.3W Ta 36W TcSingleENHANCEMENT MODE2.3WDRAIN11 nsP-ChannelSWITCHING14.4m Ω @ 9.5A, 10V3V @ 250μA2865pF @ 15V9.5A Ta 20A Tc65nC @ 10V10ns4.5V 10V±25V26 ns44 ns9.5A-25V40A--30V32A750μm3.3mm3.3mmNoROHS3 Compliant201014.4MOhmULTRA-LOW RESISTANCE30V-1.9VNo SVHCLead Free--------
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ACTIVE (Last Updated: 11 hours ago)43 WeeksSurface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)5EAR99Nickel/Palladium (Ni/Pd)FET General Purpose PowerMOSFET (Metal Oxide)DUALS-PDSO-N512W Ta 41W TcSingleENHANCEMENT MODE2WDRAIN12 nsN-ChannelSWITCHING5.8m Ω @ 13.5A, 10V3V @ 250μA2660pF @ 20V14A Ta 20A Tc43nC @ 10V4ns4.5V 10V±20V3 ns27 ns14A-20V64A-40V50A1.05mm3.3mm3.3mmNoROHS3 Compliant-5.8MOhm--2VNo SVHCLead FreeGold-------
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ACTIVE (Last Updated: 1 day ago)34 WeeksSurface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)5EAR99Nickel/Palladium (Ni/Pd)FET General Purpose PowerMOSFET (Metal Oxide)DUALS-PDSO-N512.3W Ta 41W TcSingleENHANCEMENT MODE2.3WDRAIN18 nsN-ChannelSWITCHING6.1m Ω @ 15A, 4.5V1.5V @ 250μA3365pF @ 15V15A Ta 20A Tc27.2nC @ 4.5V9ns2.5V 4.5V±12V6 ns35 ns15A-12V64A-30V60A1.05mm3.3mm3.3mm-ROHS3 Compliant-6.1MOhm--800mVNo SVHCLead Free-NO LEADNOT SPECIFIEDNOT SPECIFIEDNot Qualified1150°C1.1 V
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