Fairchild/ON Semiconductor FDMC8462

Name: FDMC8462
Brand: Fairchild/ON Semiconductor
SKU: 2849191-FDMC8462
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMC8462

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2849191-FDMC8462

Description:: MOSFET N-CH 40V 14A POWER33

ECAD Model:

Datasheet:: FDMC8462

Specifications

Fairchild/ON Semiconductor FDMC8462 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC8462.

Lifecycle Status
ACTIVE (Last Updated: 11 hours ago)
Factory Lead Time
43 Weeks
Contact Plating
Gold
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
32.13mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Resistance
5.8MOhm
Terminal Finish
Nickel/Palladium (Ni/Pd)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
JESD-30 Code
S-PDSO-N5
Number of Elements
1
Power Dissipation-Max
2W Ta 41W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Case Connection
DRAIN
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5.8m Ω @ 13.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2660pF @ 20V
Current - Continuous Drain (Id) @ 25°C
14A Ta 20A Tc
Gate Charge (Qg) (Max) @ Vgs
43nC @ 10V
Rise Time
4ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
3 ns
Turn-Off Delay Time
27 ns
Continuous Drain Current (ID)
14A
Threshold Voltage
2V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
64A
Drain to Source Breakdown Voltage
40V
Pulsed Drain Current-Max (IDM)
50A
Height
1.05mm
Length
3.3mm
Width
3.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDMC8462 Description
This N-Channel MOSFET is made utilizing the cutting-edge Power Trench? process from Fairchild Semiconductor, which has been carefully designed to reduce on-state resistance while maintaining exceptional switching performance. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance.

FDMC8462 Features
Maximum r°s(on) is 5.8mQ at 10V and 13.5A.
At Vcs = 4 5V, Iq = 11 RA, Max rDS(on)= R OmO
Low Profile - maximum of 1 mm in Power 33
Completely UIL tested
REACH Compliant

FDMC8462 Applications
Switching applications

FDMC8462 More Descriptions

N-Channel Power Trench® MOSFET 40V, 20A, 5.8mΩ
Trans MOSFET N-CH Si 40V 14A 8-Pin Power 33 T/R / MOSFET N-CH 40V 14A POWER33
PQFN 3.3X3.3,40V,20A,7.1m ohm,NCH POWER TRENCH MOSFET
Transistor, N-channel, PowerTrench MOSFET, 40 V, 20 A, 5.8 mOhm, low profile | ON Semiconductor FDMC8462
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
MOSFET, N CH, 40V, 20A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:41W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Product Comparison

The three parts on the right have similar specifications to FDMC8462.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Position

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Published

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Channels

Drain to Source Voltage (Vdss)

JEDEC-95 Code

DS Breakdown Voltage-Min

HTS Code

Reach Compliance Code

Avalanche Energy Rating (Eas)

Nominal Vgs

View Compare
FDMC8462

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 11 hours ago)

43 Weeks

Gold

Surface Mount

Surface Mount

8-PowerTDFN

8

32.13mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e4

yes

Active

1 (Unlimited)

5

EAR99

5.8MOhm

Nickel/Palladium (Ni/Pd)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

2W Ta 41W Tc

Single

ENHANCEMENT MODE

2W

DRAIN

12 ns

N-Channel

SWITCHING

5.8m Ω @ 13.5A, 10V

3V @ 250μA

2660pF @ 20V

14A Ta 20A Tc

43nC @ 10V

4ns

4.5V 10V

±20V

3 ns

27 ns

14A

2V

20V

64A

40V

50A

1.05mm

3.3mm

3.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
FDMC612PZ

Fairchild/ON Semiconductor

CONSULT SALES OFFICE (Last Updated: 1 week ago)

-

-

Surface Mount

Surface Mount

8-PowerWDFN

8

180mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e4

yes

Obsolete

1 (Unlimited)

5

EAR99

-

Nickel/Palladium/Gold (Ni/Pd/Au)

Other Transistors

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

2.3W Ta 26W Tc

Single

ENHANCEMENT MODE

2.3W

DRAIN

26 ns

P-Channel

SWITCHING

8.4m Ω @ 14A, 4.5V

1.5V @ 250μA

7995pF @ 10V

14A Ta

74nC @ 4.5V

52ns

2.5V 4.5V

±12V

81 ns

96 ns

14A

-

12V

40A

-

50A

750μm

3.3mm

3.3mm

-

-

RoHS Compliant

-

2017

NO LEAD

NOT SPECIFIED

NOT SPECIFIED

1

20V

MO-240BA

20V

-

-

-

-

FDMC8462 vs FDMC612PZ
FDMC8360LET40

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

19 Weeks

-

Surface Mount

Surface Mount

8-PowerWDFN

-

152.7mg

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

-

EAR99

-

Tin (Sn)

-

MOSFET (Metal Oxide)

-

-

-

2.8W Ta 75W Tc

Single

-

-

-

-

N-Channel

-

2.1m Ω @ 27A, 10V

3V @ 250μA

5300pF @ 20V

27A Ta 141A Tc

80nC @ 10V

-

4.5V 10V

±20V

-

-

141A

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

260

NOT SPECIFIED

-

40V

-

-

8541.29.00.95

not_compliant

-

-

FDMC8462 vs FDMC8360LET40
FDMC86102

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

40 Weeks

-

Surface Mount

Surface Mount

8-PowerTDFN

8

32.13mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e4

yes

Active

1 (Unlimited)

5

EAR99

24MOhm

Nickel/Palladium (Ni/Pd)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

2.3W Ta 41W Tc

Single

ENHANCEMENT MODE

2.3W

DRAIN

8 ns

N-Channel

SWITCHING

24m Ω @ 7A, 10V

4V @ 250μA

965pF @ 50V

7A Ta 20A Tc

18nC @ 10V

4ns

6V 10V

±20V

4 ns

14 ns

20A

3.1V

20V

7A

100V

30A

950μm

3.4mm

3.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

MO-240BA

-

-

-

72 mJ

3.1 V

FDMC8462 vs FDMC86102