Fairchild/ON Semiconductor FDMC6675BZ

Name: FDMC6675BZ
Brand: Fairchild/ON Semiconductor
SKU: 2849628-FDMC6675BZ
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMC6675BZ

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2849628-FDMC6675BZ

Description:: MOSFET P-CH 30V 9.5A POWER33

ECAD Model:

Datasheet:: FDMC6675BZ

Specifications

Fairchild/ON Semiconductor FDMC6675BZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC6675BZ.

Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Factory Lead Time
23 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Number of Pins
8
Weight
200mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2010
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Resistance
14.4MOhm
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature
ULTRA-LOW RESISTANCE
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
JESD-30 Code
S-PDSO-N5
Number of Elements
1
Power Dissipation-Max
2.3W Ta 36W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.3W
Case Connection
DRAIN
Turn On Delay Time
11 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
14.4m Ω @ 9.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2865pF @ 15V
Current - Continuous Drain (Id) @ 25°C
9.5A Ta 20A Tc
Gate Charge (Qg) (Max) @ Vgs
65nC @ 10V
Rise Time
10ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±25V
Fall Time (Typ)
26 ns
Turn-Off Delay Time
44 ns
Continuous Drain Current (ID)
9.5A
Threshold Voltage
-1.9V
Gate to Source Voltage (Vgs)
25V
Drain Current-Max (Abs) (ID)
40A
Drain to Source Breakdown Voltage
-30V
Pulsed Drain Current-Max (IDM)
32A
Height
750μm
Length
3.3mm
Width
3.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDMC6675BZ Description
The FDMC6675BZ is a P-channel MOSFET produced using the PowerTrench? process. The onsemi FDMC6675BZ is designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS (ON) and ESD protection. The FDMC6675BZ is suitable for load switch and battery pack applications.

FDMC6675BZ Features
Max RDS(on) = 14.4 m at VGS = ?10 V, ID = ?9.5 A
Max RDS(on) = 27.0 m at VGS = ?4.5 V, ID = ?6.9 A
HBM ESD Protection Level of 8 kV Typical (Note 3)
Extended VGSS Range (?25 V) for Battery Applications
High Performance Trench Technology for Extremely Low RDS(on)
High Power and Current Handling Capability
Pb?Free, Halogen Free/BFR Free and are RoHS Compliant

FDMC6675BZ Applications
Load Switch in Notebook
Server
Notebook Battery Pack Power Management

FDMC6675BZ More Descriptions

P-Channel Power Trench® MOSFET -30V, -20A, 14.4mΩ
P-Channel 30 V 14.4 mO Surface Mount Power Trench Mosfet - MLP-3.3 x 3.3
The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection.
MOSFET, P CH, 30V, 20A, MLP 3.3X3.3; Transistor Polarity:P Channel; Continuous Drain Current Id:-20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0107ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.9V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Product Comparison

The three parts on the right have similar specifications to FDMC6675BZ.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

JEDEC-95 Code

Avalanche Energy Rating (Eas)

Nominal Vgs

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Number of Channels

Max Junction Temperature (Tj)

View Compare
FDMC6675BZ

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 5 days ago)

23 Weeks

Surface Mount

Surface Mount

8-PowerWDFN

8

200mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2010

e4

yes

Active

1 (Unlimited)

5

EAR99

14.4MOhm

Nickel/Palladium/Gold (Ni/Pd/Au)

ULTRA-LOW RESISTANCE

Other Transistors

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

2.3W Ta 36W Tc

Single

ENHANCEMENT MODE

2.3W

DRAIN

11 ns

P-Channel

SWITCHING

14.4m Ω @ 9.5A, 10V

3V @ 250μA

2865pF @ 15V

9.5A Ta 20A Tc

65nC @ 10V

10ns

30V

4.5V 10V

±25V

26 ns

44 ns

9.5A

-1.9V

25V

40A

-30V

32A

750μm

3.3mm

3.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
FDMC86102

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

40 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

32.13mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

e4

yes

Active

1 (Unlimited)

5

EAR99

24MOhm

Nickel/Palladium (Ni/Pd)

-

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

2.3W Ta 41W Tc

Single

ENHANCEMENT MODE

2.3W

DRAIN

8 ns

N-Channel

SWITCHING

24m Ω @ 7A, 10V

4V @ 250μA

965pF @ 50V

7A Ta 20A Tc

18nC @ 10V

4ns

-

6V 10V

±20V

4 ns

14 ns

20A

3.1V

20V

7A

100V

30A

950μm

3.4mm

3.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

MO-240BA

72 mJ

3.1 V

-

-

-

-

-

-

FDMC6675BZ vs FDMC86102
FDMC86244

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 18 hours ago)

12 Weeks

Surface Mount

Surface Mount

8-PowerWDFN

8

180mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2006

e4

yes

Active

1 (Unlimited)

5

EAR99

-

Nickel/Palladium/Gold (Ni/Pd/Au)

-

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

2.3W Ta 26W Tc

Single

ENHANCEMENT MODE

26W

DRAIN

5.3 ns

N-Channel

SWITCHING

134m Ω @ 2.8A, 10V

4V @ 250μA

345pF @ 75V

2.8A Ta 9.4A Tc

5.9nC @ 10V

1.5ns

-

6V 10V

±20V

2.3 ns

9.9 ns

9.4A

2.6V

20V

-

150V

-

750μm

3.3mm

3.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

2.6 V

-

-

-

-

-

-

FDMC6675BZ vs FDMC86244
FDMC8651

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

34 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

32.13mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

e4

yes

Active

1 (Unlimited)

5

EAR99

6.1MOhm

Nickel/Palladium (Ni/Pd)

-

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

2.3W Ta 41W Tc

Single

ENHANCEMENT MODE

2.3W

DRAIN

18 ns

N-Channel

SWITCHING

6.1m Ω @ 15A, 4.5V

1.5V @ 250μA

3365pF @ 15V

15A Ta 20A Tc

27.2nC @ 4.5V

9ns

-

2.5V 4.5V

±12V

6 ns

35 ns

15A

800mV

12V

64A

30V

60A

1.05mm

3.3mm

3.3mm

No SVHC

-

ROHS3 Compliant

Lead Free

-

-

1.1 V

NO LEAD

NOT SPECIFIED

NOT SPECIFIED

Not Qualified

1

150°C

FDMC6675BZ vs FDMC8651