Fairchild/ON Semiconductor FDMC612PZ
- Part Number:
- FDMC612PZ
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3586233-FDMC612PZ
- Description:
- MOSFET P-CH 20V 8-MLP
- Datasheet:
- FDMC612PZ
Fairchild/ON Semiconductor FDMC612PZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC612PZ.
- Lifecycle StatusCONSULT SALES OFFICE (Last Updated: 1 week ago)
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerWDFN
- Number of Pins8
- Weight180mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2017
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeS-PDSO-N5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.3W Ta 26W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.3W
- Case ConnectionDRAIN
- Turn On Delay Time26 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8.4m Ω @ 14A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds7995pF @ 10V
- Current - Continuous Drain (Id) @ 25°C14A Ta
- Gate Charge (Qg) (Max) @ Vgs74nC @ 4.5V
- Rise Time52ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)81 ns
- Turn-Off Delay Time96 ns
- Continuous Drain Current (ID)14A
- JEDEC-95 CodeMO-240BA
- Gate to Source Voltage (Vgs)12V
- Drain Current-Max (Abs) (ID)40A
- Pulsed Drain Current-Max (IDM)50A
- DS Breakdown Voltage-Min20V
- Height750μm
- Length3.3mm
- Width3.3mm
- RoHS StatusRoHS Compliant
FDMC612PZ Description
Fairchild Semiconductor's innovative PowerTrench? process is used to make this P-Channel MOSFET, which has been tuned for rDS(0N), switching performance, and robustness. These devices are designed to ensure a high level of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance.
FDMC612PZ Features
At Vgg = -4.5 V, Iq = -14 A, MaxDs(on) = 844 mQ.
At Vgg = -2.5 V, Iq = -11 A, MaxDS(on)= 43 mfl.
High power and current handling capability in a widely used surface mount package with high performance trench technology for extremely low rDS(on).
Tefmination is RoHS compliant and lead-free. HBM ESD capability level > 3.6 KV is normal (Note 4)
FDMC612PZ Applications
Battery Management is a term that refers to the process of managing a battery.
Activate the load switch
Fairchild Semiconductor's innovative PowerTrench? process is used to make this P-Channel MOSFET, which has been tuned for rDS(0N), switching performance, and robustness. These devices are designed to ensure a high level of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance.
FDMC612PZ Features
At Vgg = -4.5 V, Iq = -14 A, MaxDs(on) = 844 mQ.
At Vgg = -2.5 V, Iq = -11 A, MaxDS(on)= 43 mfl.
High power and current handling capability in a widely used surface mount package with high performance trench technology for extremely low rDS(on).
Tefmination is RoHS compliant and lead-free. HBM ESD capability level > 3.6 KV is normal (Note 4)
FDMC612PZ Applications
Battery Management is a term that refers to the process of managing a battery.
Activate the load switch
FDMC612PZ More Descriptions
P-Channel PowerTrench® MOSFET -20V, -14A, 8.4mΩ
Power Field-Effect Transistor, 14A I(D), 20V, 0.0084ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.
Power Field-Effect Transistor, 14A I(D), 20V, 0.0084ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.
The three parts on the right have similar specifications to FDMC612PZ.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinHeightLengthWidthRoHS StatusFactory Lead TimeResistanceThreshold VoltageDrain to Source Breakdown VoltageAvalanche Energy Rating (Eas)Nominal VgsREACH SVHCRadiation HardeningLead FreeQualification StatusMax Junction Temperature (Tj)View Compare
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FDMC612PZCONSULT SALES OFFICE (Last Updated: 1 week ago)Surface MountSurface Mount8-PowerWDFN8180mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2017e4yesObsolete1 (Unlimited)5EAR99Nickel/Palladium/Gold (Ni/Pd/Au)Other TransistorsMOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIEDNOT SPECIFIEDS-PDSO-N5112.3W Ta 26W TcSingleENHANCEMENT MODE2.3WDRAIN26 nsP-ChannelSWITCHING8.4m Ω @ 14A, 4.5V1.5V @ 250μA7995pF @ 10V14A Ta74nC @ 4.5V52ns20V2.5V 4.5V±12V81 ns96 ns14AMO-240BA12V40A50A20V750μm3.3mm3.3mmRoHS Compliant------------
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ACTIVE (Last Updated: 1 week ago)Surface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-e4yesActive1 (Unlimited)5EAR99Nickel/Palladium (Ni/Pd)FET General Purpose PowerMOSFET (Metal Oxide)DUAL---S-PDSO-N51-2.3W Ta 41W TcSingleENHANCEMENT MODE2.3WDRAIN8 nsN-ChannelSWITCHING24m Ω @ 7A, 10V4V @ 250μA965pF @ 50V7A Ta 20A Tc18nC @ 10V4ns-6V 10V±20V4 ns14 ns20AMO-240BA20V7A30A-950μm3.4mm3.4mmROHS3 Compliant40 Weeks24MOhm3.1V100V72 mJ3.1 VNo SVHCNoLead Free--
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ACTIVE (Last Updated: 18 hours ago)Surface MountSurface Mount8-PowerWDFN8180mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2006e4yesActive1 (Unlimited)5EAR99Nickel/Palladium/Gold (Ni/Pd/Au)FET General Purpose PowerMOSFET (Metal Oxide)DUAL---S-PDSO-N51-2.3W Ta 26W TcSingleENHANCEMENT MODE26WDRAIN5.3 nsN-ChannelSWITCHING134m Ω @ 2.8A, 10V4V @ 250μA345pF @ 75V2.8A Ta 9.4A Tc5.9nC @ 10V1.5ns-6V 10V±20V2.3 ns9.9 ns9.4A-20V---750μm3.3mm3.3mmROHS3 Compliant12 Weeks-2.6V150V-2.6 VNo SVHCNoLead Free--
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ACTIVE (Last Updated: 1 day ago)Surface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-e4yesActive1 (Unlimited)5EAR99Nickel/Palladium (Ni/Pd)FET General Purpose PowerMOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIEDNOT SPECIFIEDS-PDSO-N5112.3W Ta 41W TcSingleENHANCEMENT MODE2.3WDRAIN18 nsN-ChannelSWITCHING6.1m Ω @ 15A, 4.5V1.5V @ 250μA3365pF @ 15V15A Ta 20A Tc27.2nC @ 4.5V9ns-2.5V 4.5V±12V6 ns35 ns15A-12V64A60A-1.05mm3.3mm3.3mmROHS3 Compliant34 Weeks6.1MOhm800mV30V-1.1 VNo SVHC-Lead FreeNot Qualified150°C
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