FDMC612PZ

Fairchild/ON Semiconductor FDMC612PZ

Part Number:
FDMC612PZ
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3586233-FDMC612PZ
Description:
MOSFET P-CH 20V 8-MLP
ECAD Model:
Datasheet:
FDMC612PZ

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Comments
Specifications
Fairchild/ON Semiconductor FDMC612PZ technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC612PZ.
  • Lifecycle Status
    CONSULT SALES OFFICE (Last Updated: 1 week ago)
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Number of Pins
    8
  • Weight
    180mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2017
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    S-PDSO-N5
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.3W Ta 26W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.3W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    26 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8.4m Ω @ 14A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    7995pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    14A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    74nC @ 4.5V
  • Rise Time
    52ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    81 ns
  • Turn-Off Delay Time
    96 ns
  • Continuous Drain Current (ID)
    14A
  • JEDEC-95 Code
    MO-240BA
  • Gate to Source Voltage (Vgs)
    12V
  • Drain Current-Max (Abs) (ID)
    40A
  • Pulsed Drain Current-Max (IDM)
    50A
  • DS Breakdown Voltage-Min
    20V
  • Height
    750μm
  • Length
    3.3mm
  • Width
    3.3mm
  • RoHS Status
    RoHS Compliant
Description
FDMC612PZ Description
Fairchild Semiconductor's innovative PowerTrench? process is used to make this P-Channel MOSFET, which has been tuned for rDS(0N), switching performance, and robustness. These devices are designed to ensure a high level of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance.

FDMC612PZ Features
At Vgg = -4.5 V, Iq = -14 A, MaxDs(on) = 844 mQ.
At Vgg = -2.5 V, Iq = -11 A, MaxDS(on)= 43 mfl.
High power and current handling capability in a widely used surface mount package with high performance trench technology for extremely low rDS(on).
Tefmination is RoHS compliant and lead-free. HBM ESD capability level > 3.6 KV is normal (Note 4)

FDMC612PZ Applications
Battery Management is a term that refers to the process of managing a battery.
Activate the load switch
FDMC612PZ More Descriptions
P-Channel PowerTrench® MOSFET -20V, -14A, 8.4mΩ
Power Field-Effect Transistor, 14A I(D), 20V, 0.0084ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and ruggedness.
Product Comparison
The three parts on the right have similar specifications to FDMC612PZ.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    RoHS Status
    Factory Lead Time
    Resistance
    Threshold Voltage
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    REACH SVHC
    Radiation Hardening
    Lead Free
    Qualification Status
    Max Junction Temperature (Tj)
    View Compare
  • FDMC612PZ
    FDMC612PZ
    CONSULT SALES OFFICE (Last Updated: 1 week ago)
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    180mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e4
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    S-PDSO-N5
    1
    1
    2.3W Ta 26W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    26 ns
    P-Channel
    SWITCHING
    8.4m Ω @ 14A, 4.5V
    1.5V @ 250μA
    7995pF @ 10V
    14A Ta
    74nC @ 4.5V
    52ns
    20V
    2.5V 4.5V
    ±12V
    81 ns
    96 ns
    14A
    MO-240BA
    12V
    40A
    50A
    20V
    750μm
    3.3mm
    3.3mm
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMC86102
    ACTIVE (Last Updated: 1 week ago)
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium (Ni/Pd)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    -
    -
    -
    S-PDSO-N5
    1
    -
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    8 ns
    N-Channel
    SWITCHING
    24m Ω @ 7A, 10V
    4V @ 250μA
    965pF @ 50V
    7A Ta 20A Tc
    18nC @ 10V
    4ns
    -
    6V 10V
    ±20V
    4 ns
    14 ns
    20A
    MO-240BA
    20V
    7A
    30A
    -
    950μm
    3.4mm
    3.4mm
    ROHS3 Compliant
    40 Weeks
    24MOhm
    3.1V
    100V
    72 mJ
    3.1 V
    No SVHC
    No
    Lead Free
    -
    -
  • FDMC86244
    ACTIVE (Last Updated: 18 hours ago)
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    180mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2006
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    -
    -
    -
    S-PDSO-N5
    1
    -
    2.3W Ta 26W Tc
    Single
    ENHANCEMENT MODE
    26W
    DRAIN
    5.3 ns
    N-Channel
    SWITCHING
    134m Ω @ 2.8A, 10V
    4V @ 250μA
    345pF @ 75V
    2.8A Ta 9.4A Tc
    5.9nC @ 10V
    1.5ns
    -
    6V 10V
    ±20V
    2.3 ns
    9.9 ns
    9.4A
    -
    20V
    -
    -
    -
    750μm
    3.3mm
    3.3mm
    ROHS3 Compliant
    12 Weeks
    -
    2.6V
    150V
    -
    2.6 V
    No SVHC
    No
    Lead Free
    -
    -
  • FDMC8651
    ACTIVE (Last Updated: 1 day ago)
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium (Ni/Pd)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    S-PDSO-N5
    1
    1
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    18 ns
    N-Channel
    SWITCHING
    6.1m Ω @ 15A, 4.5V
    1.5V @ 250μA
    3365pF @ 15V
    15A Ta 20A Tc
    27.2nC @ 4.5V
    9ns
    -
    2.5V 4.5V
    ±12V
    6 ns
    35 ns
    15A
    -
    12V
    64A
    60A
    -
    1.05mm
    3.3mm
    3.3mm
    ROHS3 Compliant
    34 Weeks
    6.1MOhm
    800mV
    30V
    -
    1.1 V
    No SVHC
    -
    Lead Free
    Not Qualified
    150°C
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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