FDMC8651

Fairchild/ON Semiconductor FDMC8651

Part Number:
FDMC8651
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2848463-FDMC8651
Description:
MOSFET N-CH 30V 15A POWER33
ECAD Model:
Datasheet:
FDMC8651

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Specifications
Fairchild/ON Semiconductor FDMC8651 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC8651.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    34 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    32.13mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Resistance
    6.1MOhm
  • Terminal Finish
    Nickel/Palladium (Ni/Pd)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    S-PDSO-N5
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2.3W Ta 41W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.3W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    18 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    6.1m Ω @ 15A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3365pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    15A Ta 20A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    27.2nC @ 4.5V
  • Rise Time
    9ns
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    6 ns
  • Turn-Off Delay Time
    35 ns
  • Continuous Drain Current (ID)
    15A
  • Threshold Voltage
    800mV
  • Gate to Source Voltage (Vgs)
    12V
  • Drain Current-Max (Abs) (ID)
    64A
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    60A
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    1.1 V
  • Height
    1.05mm
  • Length
    3.3mm
  • Width
    3.3mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description

FDMC8651 Description
This FDMC8651 was created with the goal of increasing the efficiency of DC/DC converters. The various components of gate charge and capacitance have been tuned to reduce switching losses using novel MOSFET fabrication techniques. With both adaptive and fixed dead time gate drive circuits, low gate resistance and very low Miller charge enable great performance. To create a sub-logic-level device, the rDS(on) has been kept very low.

FDMC8651 Features
Max rDS(on) = 6.1 m? at VGS = 4.5 V, ID = 15 A
Max rDS(on) = 9.3 m? at VGS = 2.5 V, ID = 12 A
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant

FDMC8651 Applications
Synchronous rectifier
3.3 V input synchronous buck switch
FDMC8651 More Descriptions
N-Channel Power Trench® MOSFET 30V, 20A, 6.1mΩ
Trans MOSFET N-CH Si 30V 15A 8-Pin Power 33 T/R / MOSFET N-CH 30V 15A POWER33
MOSFET, N CH, 30V, 20A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0043ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.1V; Power Dissipation Pd:41W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide a sub logic-level device.
Product Comparison
The three parts on the right have similar specifications to FDMC8651.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Published
    Radiation Hardening
    Additional Feature
    Drain to Source Voltage (Vdss)
    Contact Plating
    View Compare
  • FDMC8651
    FDMC8651
    ACTIVE (Last Updated: 1 day ago)
    34 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    6.1MOhm
    Nickel/Palladium (Ni/Pd)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    S-PDSO-N5
    Not Qualified
    1
    1
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    18 ns
    N-Channel
    SWITCHING
    6.1m Ω @ 15A, 4.5V
    1.5V @ 250μA
    3365pF @ 15V
    15A Ta 20A Tc
    27.2nC @ 4.5V
    9ns
    2.5V 4.5V
    ±12V
    6 ns
    35 ns
    15A
    800mV
    12V
    64A
    30V
    60A
    150°C
    1.1 V
    1.05mm
    3.3mm
    3.3mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • FDMC86244
    ACTIVE (Last Updated: 18 hours ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    180mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    Nickel/Palladium/Gold (Ni/Pd/Au)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    -
    -
    -
    S-PDSO-N5
    -
    1
    -
    2.3W Ta 26W Tc
    Single
    ENHANCEMENT MODE
    26W
    DRAIN
    5.3 ns
    N-Channel
    SWITCHING
    134m Ω @ 2.8A, 10V
    4V @ 250μA
    345pF @ 75V
    2.8A Ta 9.4A Tc
    5.9nC @ 10V
    1.5ns
    6V 10V
    ±20V
    2.3 ns
    9.9 ns
    9.4A
    2.6V
    20V
    -
    150V
    -
    -
    2.6 V
    750μm
    3.3mm
    3.3mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    2006
    No
    -
    -
    -
  • FDMC6675BZ
    ACTIVE (Last Updated: 5 days ago)
    23 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    200mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    14.4MOhm
    Nickel/Palladium/Gold (Ni/Pd/Au)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    -
    -
    -
    S-PDSO-N5
    -
    1
    -
    2.3W Ta 36W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    11 ns
    P-Channel
    SWITCHING
    14.4m Ω @ 9.5A, 10V
    3V @ 250μA
    2865pF @ 15V
    9.5A Ta 20A Tc
    65nC @ 10V
    10ns
    4.5V 10V
    ±25V
    26 ns
    44 ns
    9.5A
    -1.9V
    25V
    40A
    -30V
    32A
    -
    -
    750μm
    3.3mm
    3.3mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    2010
    No
    ULTRA-LOW RESISTANCE
    30V
    -
  • FDMC8462
    ACTIVE (Last Updated: 11 hours ago)
    43 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    5.8MOhm
    Nickel/Palladium (Ni/Pd)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    -
    -
    -
    S-PDSO-N5
    -
    1
    -
    2W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2W
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    5.8m Ω @ 13.5A, 10V
    3V @ 250μA
    2660pF @ 20V
    14A Ta 20A Tc
    43nC @ 10V
    4ns
    4.5V 10V
    ±20V
    3 ns
    27 ns
    14A
    2V
    20V
    64A
    40V
    50A
    -
    -
    1.05mm
    3.3mm
    3.3mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    No
    -
    -
    Gold
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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