Fairchild/ON Semiconductor FDMC8651
- Part Number:
- FDMC8651
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2848463-FDMC8651
- Description:
- MOSFET N-CH 30V 15A POWER33
- Datasheet:
- FDMC8651
Fairchild/ON Semiconductor FDMC8651 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC8651.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time34 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Weight32.13mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee4
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Resistance6.1MOhm
- Terminal FinishNickel/Palladium (Ni/Pd)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeS-PDSO-N5
- Qualification StatusNot Qualified
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.3W Ta 41W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.3W
- Case ConnectionDRAIN
- Turn On Delay Time18 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs6.1m Ω @ 15A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3365pF @ 15V
- Current - Continuous Drain (Id) @ 25°C15A Ta 20A Tc
- Gate Charge (Qg) (Max) @ Vgs27.2nC @ 4.5V
- Rise Time9ns
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)6 ns
- Turn-Off Delay Time35 ns
- Continuous Drain Current (ID)15A
- Threshold Voltage800mV
- Gate to Source Voltage (Vgs)12V
- Drain Current-Max (Abs) (ID)64A
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)60A
- Max Junction Temperature (Tj)150°C
- Nominal Vgs1.1 V
- Height1.05mm
- Length3.3mm
- Width3.3mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDMC8651 Description
This FDMC8651 was created with the goal of increasing the efficiency of DC/DC converters. The various components of gate charge and capacitance have been tuned to reduce switching losses using novel MOSFET fabrication techniques. With both adaptive and fixed dead time gate drive circuits, low gate resistance and very low Miller charge enable great performance. To create a sub-logic-level device, the rDS(on) has been kept very low.
FDMC8651 Features
Max rDS(on) = 6.1 m? at VGS = 4.5 V, ID = 15 A
Max rDS(on) = 9.3 m? at VGS = 2.5 V, ID = 12 A
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant
FDMC8651 Applications
Synchronous rectifier
3.3 V input synchronous buck switch
FDMC8651 More Descriptions
N-Channel Power Trench® MOSFET 30V, 20A, 6.1mΩ
Trans MOSFET N-CH Si 30V 15A 8-Pin Power 33 T/R / MOSFET N-CH 30V 15A POWER33
MOSFET, N CH, 30V, 20A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0043ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.1V; Power Dissipation Pd:41W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide a sub logic-level device.
Trans MOSFET N-CH Si 30V 15A 8-Pin Power 33 T/R / MOSFET N-CH 30V 15A POWER33
MOSFET, N CH, 30V, 20A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0043ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.1V; Power Dissipation Pd:41W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide a sub logic-level device.
The three parts on the right have similar specifications to FDMC8651.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Max Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRoHS StatusLead FreePublishedRadiation HardeningAdditional FeatureDrain to Source Voltage (Vdss)Contact PlatingView Compare
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FDMC8651ACTIVE (Last Updated: 1 day ago)34 WeeksSurface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)5EAR996.1MOhmNickel/Palladium (Ni/Pd)FET General Purpose PowerMOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIEDNOT SPECIFIEDS-PDSO-N5Not Qualified112.3W Ta 41W TcSingleENHANCEMENT MODE2.3WDRAIN18 nsN-ChannelSWITCHING6.1m Ω @ 15A, 4.5V1.5V @ 250μA3365pF @ 15V15A Ta 20A Tc27.2nC @ 4.5V9ns2.5V 4.5V±12V6 ns35 ns15A800mV12V64A30V60A150°C1.1 V1.05mm3.3mm3.3mmNo SVHCROHS3 CompliantLead Free------
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ACTIVE (Last Updated: 18 hours ago)12 WeeksSurface MountSurface Mount8-PowerWDFN8180mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)5EAR99-Nickel/Palladium/Gold (Ni/Pd/Au)FET General Purpose PowerMOSFET (Metal Oxide)DUAL---S-PDSO-N5-1-2.3W Ta 26W TcSingleENHANCEMENT MODE26WDRAIN5.3 nsN-ChannelSWITCHING134m Ω @ 2.8A, 10V4V @ 250μA345pF @ 75V2.8A Ta 9.4A Tc5.9nC @ 10V1.5ns6V 10V±20V2.3 ns9.9 ns9.4A2.6V20V-150V--2.6 V750μm3.3mm3.3mmNo SVHCROHS3 CompliantLead Free2006No---
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ACTIVE (Last Updated: 5 days ago)23 WeeksSurface MountSurface Mount8-PowerWDFN8200mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)5EAR9914.4MOhmNickel/Palladium/Gold (Ni/Pd/Au)Other TransistorsMOSFET (Metal Oxide)DUAL---S-PDSO-N5-1-2.3W Ta 36W TcSingleENHANCEMENT MODE2.3WDRAIN11 nsP-ChannelSWITCHING14.4m Ω @ 9.5A, 10V3V @ 250μA2865pF @ 15V9.5A Ta 20A Tc65nC @ 10V10ns4.5V 10V±25V26 ns44 ns9.5A-1.9V25V40A-30V32A--750μm3.3mm3.3mmNo SVHCROHS3 CompliantLead Free2010NoULTRA-LOW RESISTANCE30V-
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ACTIVE (Last Updated: 11 hours ago)43 WeeksSurface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)5EAR995.8MOhmNickel/Palladium (Ni/Pd)FET General Purpose PowerMOSFET (Metal Oxide)DUAL---S-PDSO-N5-1-2W Ta 41W TcSingleENHANCEMENT MODE2WDRAIN12 nsN-ChannelSWITCHING5.8m Ω @ 13.5A, 10V3V @ 250μA2660pF @ 20V14A Ta 20A Tc43nC @ 10V4ns4.5V 10V±20V3 ns27 ns14A2V20V64A40V50A--1.05mm3.3mm3.3mmNo SVHCROHS3 CompliantLead Free-No--Gold
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