FDMC8360LET40

Fairchild/ON Semiconductor FDMC8360LET40

Part Number:
FDMC8360LET40
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2850319-FDMC8360LET40
Description:
PT8 N-CH 40/20V POWER TRENCH MOS
ECAD Model:
Datasheet:
FDMC8360LET40

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Specifications
Fairchild/ON Semiconductor FDMC8360LET40 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC8360LET40.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 week ago)
  • Factory Lead Time
    19 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Weight
    152.7mg
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.29.00.95
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Power Dissipation-Max
    2.8W Ta 75W Tc
  • Element Configuration
    Single
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    2.1m Ω @ 27A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5300pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    27A Ta 141A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    80nC @ 10V
  • Drain to Source Voltage (Vdss)
    40V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    141A
  • RoHS Status
    ROHS3 Compliant
Description
FDMC8360LET40                                Description This N-Channel MOSFET is produced using Fair child Semiconductor's advanced Power Trenchprocess that  incorporates shielded gate technology. This process has been optimized for the on-state resistance and vet maintain superior switching performance.   FDMC8360LET40                                Application =DC-DC Conversion   FDMC8360LET40                                Features Shielded Gate MOSFET Technology Max rpsfon) = 2.1 mΩ at Vgs = 10 V, lb = 27 A Max 「ps(on) = 3.1 mΩ at VGs = 4.5 V, b = 22 A High Performance Technology for Extremely Low rpsjor Termination is Lead-free 100% UIL Tested RoHs Compliant  
FDMC8360LET40 More Descriptions
N-Channel Shielded Gate Power Trench® MOSFET 40V, 141A, 2.1mΩ
Power Field-Effect Transistor, 141A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates shielded gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Product Comparison
The three parts on the right have similar specifications to FDMC8360LET40.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Weight
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    HTS Code
    Technology
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Power Dissipation-Max
    Element Configuration
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    RoHS Status
    Number of Pins
    Transistor Element Material
    Number of Terminations
    Resistance
    Subcategory
    Terminal Position
    JESD-30 Code
    Number of Elements
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    Transistor Application
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Published
    Additional Feature
    Terminal Form
    Qualification Status
    Number of Channels
    Max Junction Temperature (Tj)
    View Compare
  • FDMC8360LET40
    FDMC8360LET40
    ACTIVE (Last Updated: 1 week ago)
    19 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    152.7mg
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    8541.29.00.95
    MOSFET (Metal Oxide)
    260
    not_compliant
    NOT SPECIFIED
    2.8W Ta 75W Tc
    Single
    N-Channel
    2.1m Ω @ 27A, 10V
    3V @ 250μA
    5300pF @ 20V
    27A Ta 141A Tc
    80nC @ 10V
    40V
    4.5V 10V
    ±20V
    141A
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMC86102
    ACTIVE (Last Updated: 1 week ago)
    40 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    32.13mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    EAR99
    Nickel/Palladium (Ni/Pd)
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    2.3W Ta 41W Tc
    Single
    N-Channel
    24m Ω @ 7A, 10V
    4V @ 250μA
    965pF @ 50V
    7A Ta 20A Tc
    18nC @ 10V
    -
    6V 10V
    ±20V
    20A
    ROHS3 Compliant
    8
    SILICON
    5
    24MOhm
    FET General Purpose Power
    DUAL
    S-PDSO-N5
    1
    ENHANCEMENT MODE
    2.3W
    DRAIN
    8 ns
    SWITCHING
    4ns
    4 ns
    14 ns
    3.1V
    MO-240BA
    20V
    7A
    100V
    30A
    72 mJ
    3.1 V
    950μm
    3.4mm
    3.4mm
    No SVHC
    No
    Lead Free
    -
    -
    -
    -
    -
    -
  • FDMC6675BZ
    ACTIVE (Last Updated: 5 days ago)
    23 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    200mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    2.3W Ta 36W Tc
    Single
    P-Channel
    14.4m Ω @ 9.5A, 10V
    3V @ 250μA
    2865pF @ 15V
    9.5A Ta 20A Tc
    65nC @ 10V
    30V
    4.5V 10V
    ±25V
    9.5A
    ROHS3 Compliant
    8
    SILICON
    5
    14.4MOhm
    Other Transistors
    DUAL
    S-PDSO-N5
    1
    ENHANCEMENT MODE
    2.3W
    DRAIN
    11 ns
    SWITCHING
    10ns
    26 ns
    44 ns
    -1.9V
    -
    25V
    40A
    -30V
    32A
    -
    -
    750μm
    3.3mm
    3.3mm
    No SVHC
    No
    Lead Free
    2010
    ULTRA-LOW RESISTANCE
    -
    -
    -
    -
  • FDMC8651
    ACTIVE (Last Updated: 1 day ago)
    34 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    32.13mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    EAR99
    Nickel/Palladium (Ni/Pd)
    -
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    -
    NOT SPECIFIED
    2.3W Ta 41W Tc
    Single
    N-Channel
    6.1m Ω @ 15A, 4.5V
    1.5V @ 250μA
    3365pF @ 15V
    15A Ta 20A Tc
    27.2nC @ 4.5V
    -
    2.5V 4.5V
    ±12V
    15A
    ROHS3 Compliant
    8
    SILICON
    5
    6.1MOhm
    FET General Purpose Power
    DUAL
    S-PDSO-N5
    1
    ENHANCEMENT MODE
    2.3W
    DRAIN
    18 ns
    SWITCHING
    9ns
    6 ns
    35 ns
    800mV
    -
    12V
    64A
    30V
    60A
    -
    1.1 V
    1.05mm
    3.3mm
    3.3mm
    No SVHC
    -
    Lead Free
    -
    -
    NO LEAD
    Not Qualified
    1
    150°C
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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