Fairchild/ON Semiconductor FDMC8360LET40
- Part Number:
- FDMC8360LET40
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2850319-FDMC8360LET40
- Description:
- PT8 N-CH 40/20V POWER TRENCH MOS
- Datasheet:
- FDMC8360LET40
Fairchild/ON Semiconductor FDMC8360LET40 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC8360LET40.
- Lifecycle StatusACTIVE (Last Updated: 1 week ago)
- Factory Lead Time19 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerWDFN
- Weight152.7mg
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.95
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Power Dissipation-Max2.8W Ta 75W Tc
- Element ConfigurationSingle
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs2.1m Ω @ 27A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5300pF @ 20V
- Current - Continuous Drain (Id) @ 25°C27A Ta 141A Tc
- Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)141A
- RoHS StatusROHS3 Compliant
FDMC8360LET40 Description
This N-Channel MOSFET is produced using Fair child Semiconductor's advanced Power Trenchprocess that incorporates shielded gate technology. This process has been optimized for the on-state resistance and vet maintain superior switching performance.
FDMC8360LET40 Application
=DC-DC Conversion
FDMC8360LET40 Features
Shielded Gate MOSFET Technology
Max rpsfon) = 2.1 mΩ at Vgs = 10 V, lb = 27 A
Max 「ps(on) = 3.1 mΩ at VGs = 4.5 V, b = 22 A
High Performance Technology for Extremely Low rpsjor
Termination is Lead-free
100% UIL Tested
RoHs Compliant
FDMC8360LET40 More Descriptions
N-Channel Shielded Gate Power Trench® MOSFET 40V, 141A, 2.1mΩ
Power Field-Effect Transistor, 141A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates shielded gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Power Field-Effect Transistor, 141A I(D), 40V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates shielded gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
The three parts on the right have similar specifications to FDMC8360LET40.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseWeightOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishHTS CodeTechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Power Dissipation-MaxElement ConfigurationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)RoHS StatusNumber of PinsTransistor Element MaterialNumber of TerminationsResistanceSubcategoryTerminal PositionJESD-30 CodeNumber of ElementsOperating ModePower DissipationCase ConnectionTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeThreshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningLead FreePublishedAdditional FeatureTerminal FormQualification StatusNumber of ChannelsMax Junction Temperature (Tj)View Compare
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FDMC8360LET40ACTIVE (Last Updated: 1 week ago)19 WeeksSurface MountSurface Mount8-PowerWDFN152.7mg-55°C~175°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)EAR99Tin (Sn)8541.29.00.95MOSFET (Metal Oxide)260not_compliantNOT SPECIFIED2.8W Ta 75W TcSingleN-Channel2.1m Ω @ 27A, 10V3V @ 250μA5300pF @ 20V27A Ta 141A Tc80nC @ 10V40V4.5V 10V±20V141AROHS3 Compliant-------------------------------------
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ACTIVE (Last Updated: 1 week ago)40 WeeksSurface MountSurface Mount8-PowerTDFN32.13mg-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)EAR99Nickel/Palladium (Ni/Pd)-MOSFET (Metal Oxide)---2.3W Ta 41W TcSingleN-Channel24m Ω @ 7A, 10V4V @ 250μA965pF @ 50V7A Ta 20A Tc18nC @ 10V-6V 10V±20V20AROHS3 Compliant8SILICON524MOhmFET General Purpose PowerDUALS-PDSO-N51ENHANCEMENT MODE2.3WDRAIN8 nsSWITCHING4ns4 ns14 ns3.1VMO-240BA20V7A100V30A72 mJ3.1 V950μm3.4mm3.4mmNo SVHCNoLead Free------
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ACTIVE (Last Updated: 5 days ago)23 WeeksSurface MountSurface Mount8-PowerWDFN200mg-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)EAR99Nickel/Palladium/Gold (Ni/Pd/Au)-MOSFET (Metal Oxide)---2.3W Ta 36W TcSingleP-Channel14.4m Ω @ 9.5A, 10V3V @ 250μA2865pF @ 15V9.5A Ta 20A Tc65nC @ 10V30V4.5V 10V±25V9.5AROHS3 Compliant8SILICON514.4MOhmOther TransistorsDUALS-PDSO-N51ENHANCEMENT MODE2.3WDRAIN11 nsSWITCHING10ns26 ns44 ns-1.9V-25V40A-30V32A--750μm3.3mm3.3mmNo SVHCNoLead Free2010ULTRA-LOW RESISTANCE----
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ACTIVE (Last Updated: 1 day ago)34 WeeksSurface MountSurface Mount8-PowerTDFN32.13mg-55°C~150°C TJTape & Reel (TR)PowerTrench®e4yesActive1 (Unlimited)EAR99Nickel/Palladium (Ni/Pd)-MOSFET (Metal Oxide)NOT SPECIFIED-NOT SPECIFIED2.3W Ta 41W TcSingleN-Channel6.1m Ω @ 15A, 4.5V1.5V @ 250μA3365pF @ 15V15A Ta 20A Tc27.2nC @ 4.5V-2.5V 4.5V±12V15AROHS3 Compliant8SILICON56.1MOhmFET General Purpose PowerDUALS-PDSO-N51ENHANCEMENT MODE2.3WDRAIN18 nsSWITCHING9ns6 ns35 ns800mV-12V64A30V60A-1.1 V1.05mm3.3mm3.3mmNo SVHC-Lead Free--NO LEADNot Qualified1150°C
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