FDMC7660

Fairchild/ON Semiconductor FDMC7660

Part Number:
FDMC7660
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3070491-FDMC7660
Description:
MOSFET N-CH 30V 20A 8-PQFN
ECAD Model:
Datasheet:
FDMC7660

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Specifications
Fairchild/ON Semiconductor FDMC7660 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC7660.
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    10 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    32.13mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    S-PDSO-N5
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    2.3W Ta 41W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.3W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    14 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2.2m Ω @ 20A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4830pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    20A Ta 40A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    86nC @ 10V
  • Rise Time
    6.8ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    5.7 ns
  • Turn-Off Delay Time
    36 ns
  • Continuous Drain Current (ID)
    20A
  • Threshold Voltage
    1.7V
  • JEDEC-95 Code
    MO-240BA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.0022Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    200A
  • Avalanche Energy Rating (Eas)
    200 mJ
  • Nominal Vgs
    1.7 V
  • Height
    1.05mm
  • Length
    3.3mm
  • Width
    3.3mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDMC7660 Description
The FDMC7660 is a 30v N-channel MOSFET produced using an advanced PowerTrench? process. The onsemi FDMC7660 has been specially tailored to minimize the ON-state resistance. The FDMC7660 is well suited for load switching applications common in portable battery packs. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET FDMC7660 is in the Power-33-8 package with 2.3W power dissipation.

FDMC7660 Features
Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A
Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID= 18 A
High-performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant

FDMC7660 Applications
DC-DC Buck Converters
Point of Load
High-Efficiency Load Switch and Low Side Switching
Cellular phones 
Laptop computers
FDMC7660 More Descriptions
Trans MOSFET N-CH Si 30V 20A 8-Pin Power 33 T/R / MOSFET N-CH 30V 20A 8-PQFN
N-Channel PowerTrench® MOSFET 30V, 20A, 2.2mΩ
N-Channel 30 V 20 A 2.2 mOhm Surface Mount PowerTrench® Mosfet - Power 33
Power Field-Effect Transistor, 20A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V ;RoHS Compliant: Yes
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Product Comparison
The three parts on the right have similar specifications to FDMC7660.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    HTS Code
    Drain to Source Voltage (Vdss)
    Contact Plating
    Resistance
    Drain Current-Max (Abs) (ID)
    Radiation Hardening
    Number of Channels
    Max Junction Temperature (Tj)
    View Compare
  • FDMC7660
    FDMC7660
    ACTIVE (Last Updated: 6 days ago)
    10 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2009
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    S-PDSO-N5
    Not Qualified
    1
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    14 ns
    N-Channel
    SWITCHING
    2.2m Ω @ 20A, 10V
    2.5V @ 250μA
    4830pF @ 15V
    20A Ta 40A Tc
    86nC @ 10V
    6.8ns
    4.5V 10V
    ±20V
    5.7 ns
    36 ns
    20A
    1.7V
    MO-240BA
    20V
    0.0022Ohm
    30V
    200A
    200 mJ
    1.7 V
    1.05mm
    3.3mm
    3.3mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMC8360LET40
    ACTIVE (Last Updated: 1 week ago)
    19 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    -
    152.7mg
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    -
    MOSFET (Metal Oxide)
    -
    -
    260
    not_compliant
    NOT SPECIFIED
    -
    -
    -
    2.8W Ta 75W Tc
    Single
    -
    -
    -
    -
    N-Channel
    -
    2.1m Ω @ 27A, 10V
    3V @ 250μA
    5300pF @ 20V
    27A Ta 141A Tc
    80nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    141A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    8541.29.00.95
    40V
    -
    -
    -
    -
    -
    -
  • FDMC8462
    ACTIVE (Last Updated: 11 hours ago)
    43 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium (Ni/Pd)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    -
    -
    -
    -
    S-PDSO-N5
    -
    1
    2W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2W
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    5.8m Ω @ 13.5A, 10V
    3V @ 250μA
    2660pF @ 20V
    14A Ta 20A Tc
    43nC @ 10V
    4ns
    4.5V 10V
    ±20V
    3 ns
    27 ns
    14A
    2V
    -
    20V
    -
    40V
    50A
    -
    -
    1.05mm
    3.3mm
    3.3mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    Gold
    5.8MOhm
    64A
    No
    -
    -
  • FDMC8651
    ACTIVE (Last Updated: 1 day ago)
    34 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium (Ni/Pd)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    NOT SPECIFIED
    -
    NOT SPECIFIED
    S-PDSO-N5
    Not Qualified
    1
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    18 ns
    N-Channel
    SWITCHING
    6.1m Ω @ 15A, 4.5V
    1.5V @ 250μA
    3365pF @ 15V
    15A Ta 20A Tc
    27.2nC @ 4.5V
    9ns
    2.5V 4.5V
    ±12V
    6 ns
    35 ns
    15A
    800mV
    -
    12V
    -
    30V
    60A
    -
    1.1 V
    1.05mm
    3.3mm
    3.3mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    6.1MOhm
    64A
    -
    1
    150°C
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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