Fairchild/ON Semiconductor FDMC7660
- Part Number:
- FDMC7660
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3070491-FDMC7660
- Description:
- MOSFET N-CH 30V 20A 8-PQFN
- Datasheet:
- FDMC7660
Fairchild/ON Semiconductor FDMC7660 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC7660.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time10 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Weight32.13mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeS-PDSO-N5
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max2.3W Ta 41W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.3W
- Case ConnectionDRAIN
- Turn On Delay Time14 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2.2m Ω @ 20A, 10V
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4830pF @ 15V
- Current - Continuous Drain (Id) @ 25°C20A Ta 40A Tc
- Gate Charge (Qg) (Max) @ Vgs86nC @ 10V
- Rise Time6.8ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)5.7 ns
- Turn-Off Delay Time36 ns
- Continuous Drain Current (ID)20A
- Threshold Voltage1.7V
- JEDEC-95 CodeMO-240BA
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.0022Ohm
- Drain to Source Breakdown Voltage30V
- Pulsed Drain Current-Max (IDM)200A
- Avalanche Energy Rating (Eas)200 mJ
- Nominal Vgs1.7 V
- Height1.05mm
- Length3.3mm
- Width3.3mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDMC7660 Description
The FDMC7660 is a 30v N-channel MOSFET produced using an advanced PowerTrench? process. The onsemi FDMC7660 has been specially tailored to minimize the ON-state resistance. The FDMC7660 is well suited for load switching applications common in portable battery packs. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET FDMC7660 is in the Power-33-8 package with 2.3W power dissipation.
FDMC7660 Features
Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A
Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID= 18 A
High-performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
FDMC7660 Applications
DC-DC Buck Converters
Point of Load
High-Efficiency Load Switch and Low Side Switching
Cellular phones
Laptop computers
The FDMC7660 is a 30v N-channel MOSFET produced using an advanced PowerTrench? process. The onsemi FDMC7660 has been specially tailored to minimize the ON-state resistance. The FDMC7660 is well suited for load switching applications common in portable battery packs. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET FDMC7660 is in the Power-33-8 package with 2.3W power dissipation.
FDMC7660 Features
Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A
Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID= 18 A
High-performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
FDMC7660 Applications
DC-DC Buck Converters
Point of Load
High-Efficiency Load Switch and Low Side Switching
Cellular phones
Laptop computers
FDMC7660 More Descriptions
Trans MOSFET N-CH Si 30V 20A 8-Pin Power 33 T/R / MOSFET N-CH 30V 20A 8-PQFN
N-Channel PowerTrench® MOSFET 30V, 20A, 2.2mΩ
N-Channel 30 V 20 A 2.2 mOhm Surface Mount PowerTrench® Mosfet - Power 33
Power Field-Effect Transistor, 20A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V ;RoHS Compliant: Yes
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
N-Channel PowerTrench® MOSFET 30V, 20A, 2.2mΩ
N-Channel 30 V 20 A 2.2 mOhm Surface Mount PowerTrench® Mosfet - Power 33
Power Field-Effect Transistor, 20A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V ;RoHS Compliant: Yes
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
The three parts on the right have similar specifications to FDMC7660.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRoHS StatusLead FreeHTS CodeDrain to Source Voltage (Vdss)Contact PlatingResistanceDrain Current-Max (Abs) (ID)Radiation HardeningNumber of ChannelsMax Junction Temperature (Tj)View Compare
-
FDMC7660ACTIVE (Last Updated: 6 days ago)10 WeeksSurface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2009e3yesActive1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIEDnot_compliantNOT SPECIFIEDS-PDSO-N5Not Qualified12.3W Ta 41W TcSingleENHANCEMENT MODE2.3WDRAIN14 nsN-ChannelSWITCHING2.2m Ω @ 20A, 10V2.5V @ 250μA4830pF @ 15V20A Ta 40A Tc86nC @ 10V6.8ns4.5V 10V±20V5.7 ns36 ns20A1.7VMO-240BA20V0.0022Ohm30V200A200 mJ1.7 V1.05mm3.3mm3.3mmNo SVHCROHS3 CompliantLead Free---------
-
ACTIVE (Last Updated: 1 week ago)19 WeeksSurface MountSurface Mount8-PowerWDFN-152.7mg--55°C~175°C TJTape & Reel (TR)PowerTrench®-e3yesActive1 (Unlimited)-EAR99Tin (Sn)-MOSFET (Metal Oxide)--260not_compliantNOT SPECIFIED---2.8W Ta 75W TcSingle----N-Channel-2.1m Ω @ 27A, 10V3V @ 250μA5300pF @ 20V27A Ta 141A Tc80nC @ 10V-4.5V 10V±20V--141A------------ROHS3 Compliant-8541.29.00.9540V------
-
ACTIVE (Last Updated: 11 hours ago)43 WeeksSurface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-e4yesActive1 (Unlimited)5EAR99Nickel/Palladium (Ni/Pd)FET General Purpose PowerMOSFET (Metal Oxide)DUAL----S-PDSO-N5-12W Ta 41W TcSingleENHANCEMENT MODE2WDRAIN12 nsN-ChannelSWITCHING5.8m Ω @ 13.5A, 10V3V @ 250μA2660pF @ 20V14A Ta 20A Tc43nC @ 10V4ns4.5V 10V±20V3 ns27 ns14A2V-20V-40V50A--1.05mm3.3mm3.3mmNo SVHCROHS3 CompliantLead Free--Gold5.8MOhm64ANo--
-
ACTIVE (Last Updated: 1 day ago)34 WeeksSurface MountSurface Mount8-PowerTDFN832.13mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®-e4yesActive1 (Unlimited)5EAR99Nickel/Palladium (Ni/Pd)FET General Purpose PowerMOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIED-NOT SPECIFIEDS-PDSO-N5Not Qualified12.3W Ta 41W TcSingleENHANCEMENT MODE2.3WDRAIN18 nsN-ChannelSWITCHING6.1m Ω @ 15A, 4.5V1.5V @ 250μA3365pF @ 15V15A Ta 20A Tc27.2nC @ 4.5V9ns2.5V 4.5V±12V6 ns35 ns15A800mV-12V-30V60A-1.1 V1.05mm3.3mm3.3mmNo SVHCROHS3 CompliantLead Free---6.1MOhm64A-1150°C
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
26 April 2024
Get to Know the SHT20 Digital Temperature and Humidity Sensor
Ⅰ. Description of SHT20Ⅱ. Manufacturer of SHT20 temperature and humidity sensorⅢ. SHT20 temperature and humidity sensor principleⅣ. SHT20 temperature and humidity sensor specificationsⅤ. SHT20 storage conditions and handling... -
26 April 2024
DS1302 Real Time Clock Chip: Replacements, Characteristics, Working Principle and More
Ⅰ. DS1302 overviewⅡ. Characteristics of DS1302Ⅲ. Pin functions and structure of DS1302Ⅳ. Precautions for using DS1302Ⅴ. Introduction to the clock register of DS1302Ⅵ. How does DS1302 work?Ⅶ. Reference... -
29 April 2024
74HC14D Hex Schmitt Trigger Inverter: Benefits, Application and 74HC14 vs 74HC14D
Ⅰ. Description of 74HC14DⅡ. Features and benefits of 74HC14DⅢ. Logic functions of 74HC14DⅣ. Limiting values of 74HC14DⅤ. Application market of 74HC14DⅥ. How to optimize the performance of 74HC14D... -
29 April 2024
SYN6288 Speech Synthesizer Module: Features, Usage, Pinout and More
Ⅰ. What is SYN6288?Ⅱ. SYN6288 broadcast function principleⅢ. Functional features of SYN6288Ⅳ. How to use the SYN6288 speech synthesizer module?Ⅴ. Pinout of SYN6288 speech synthesizer moduleⅥ. How to...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.