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FDMC7664

Fairchild/ON Semiconductor FDMC7664

Part Number:
FDMC7664
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3586276-FDMC7664
Description:
MOSFET N-CH 30V 8-MLP
ECAD Model:
Datasheet:
FDMC7664

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Specifications
Fairchild/ON Semiconductor FDMC7664 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC7664.
  • Lifecycle Status
    ACTIVE (Last Updated: 6 days ago)
  • Factory Lead Time
    23 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Number of Pins
    8
  • Weight
    165.33333mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e4
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
  • Additional Feature
    ULTRA-LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • JESD-30 Code
    S-PDSO-N5
  • Number of Elements
    1
  • Power Dissipation-Max
    2.3W Ta 45W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.3W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    15 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.2m Ω @ 18.8A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4865pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    18.8A Ta 24A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    76nC @ 10V
  • Rise Time
    7ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    6 ns
  • Turn-Off Delay Time
    37 ns
  • Continuous Drain Current (ID)
    24A
  • Threshold Voltage
    1.9V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain-source On Resistance-Max
    0.0042Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Pulsed Drain Current-Max (IDM)
    60A
  • Nominal Vgs
    1.9 V
  • Height
    750μm
  • Length
    3.3mm
  • Width
    3.3mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
FDMC7664 MOSFET Description
The FDMC7664 device from Onsemi is an N-Channel MOSFET rated at 30 V, 18.8 A, which means it has a Drain-Source voltage of 30 V and can hold a continuous Drain current of 18.8 A. Suitable for lots of power applications, this device has low on-resistance thanks to the PowerTrench technology. Furthermore, it has a low noise figure, which enables the accurate reception of small-level signals.

FDMC7664 MOSFET Features
Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 18.8 A
Max rDS(on) = 5.5 mΩ at VGS = 4.5 V, ID = 16.1 A
Low Input Capacitance
Fast Switching
High-performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant

FDMC7664 MOSFET Applications
DC-DC Buck Converters
Laptop Battery Power Management
Load Switch
Battery Protection
Load Management
Portable Devices
MCU
FDMC7664 More Descriptions
N-Channel PowerTrench® MOSFET 30V, 18.8A, 4.2mΩ
MOSFET, N CH, 30V, 24A, MLP 3.3X3.3; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Product Comparison
The three parts on the right have similar specifications to FDMC7664.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Published
    Resistance
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Lead Free
    Contact Plating
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Number of Channels
    Max Junction Temperature (Tj)
    View Compare
  • FDMC7664
    FDMC7664
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 6 days ago)
    23 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    165.33333mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
    ULTRA-LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 45W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    15 ns
    N-Channel
    SWITCHING
    4.2m Ω @ 18.8A, 10V
    3V @ 250μA
    4865pF @ 15V
    18.8A Ta 24A Tc
    76nC @ 10V
    7ns
    4.5V 10V
    ±20V
    6 ns
    37 ns
    24A
    1.9V
    20V
    0.0042Ohm
    30V
    60A
    1.9 V
    750μm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMC6675BZ
    FDMC6675BZ
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    23 Weeks
    Surface Mount
    Surface Mount
    8-PowerWDFN
    8
    200mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium/Gold (Ni/Pd/Au)
    ULTRA-LOW RESISTANCE
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 36W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    11 ns
    P-Channel
    SWITCHING
    14.4m Ω @ 9.5A, 10V
    3V @ 250μA
    2865pF @ 15V
    9.5A Ta 20A Tc
    65nC @ 10V
    10ns
    4.5V 10V
    ±25V
    26 ns
    44 ns
    9.5A
    -1.9V
    25V
    -
    -30V
    32A
    -
    750μm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    2010
    14.4MOhm
    30V
    40A
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    FDMC7664 vs FDMC6675BZ
  • FDMC8462
    FDMC8462
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 11 hours ago)
    43 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium (Ni/Pd)
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2W
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    5.8m Ω @ 13.5A, 10V
    3V @ 250μA
    2660pF @ 20V
    14A Ta 20A Tc
    43nC @ 10V
    4ns
    4.5V 10V
    ±20V
    3 ns
    27 ns
    14A
    2V
    20V
    -
    40V
    50A
    -
    1.05mm
    3.3mm
    3.3mm
    No SVHC
    No
    ROHS3 Compliant
    -
    5.8MOhm
    -
    64A
    Lead Free
    Gold
    -
    -
    -
    -
    -
    -
    FDMC7664 vs FDMC8462
  • FDMC8651
    FDMC8651
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    34 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    32.13mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e4
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Nickel/Palladium (Ni/Pd)
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    S-PDSO-N5
    1
    2.3W Ta 41W Tc
    Single
    ENHANCEMENT MODE
    2.3W
    DRAIN
    18 ns
    N-Channel
    SWITCHING
    6.1m Ω @ 15A, 4.5V
    1.5V @ 250μA
    3365pF @ 15V
    15A Ta 20A Tc
    27.2nC @ 4.5V
    9ns
    2.5V 4.5V
    ±12V
    6 ns
    35 ns
    15A
    800mV
    12V
    -
    30V
    60A
    1.1 V
    1.05mm
    3.3mm
    3.3mm
    No SVHC
    -
    ROHS3 Compliant
    -
    6.1MOhm
    -
    64A
    Lead Free
    -
    NO LEAD
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    1
    150°C
    FDMC7664 vs FDMC8651
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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