Fairchild/ON Semiconductor FDMC86102

Name: FDMC86102
Brand: Fairchild/ON Semiconductor
SKU: 2849809-FDMC86102
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMC86102

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2849809-FDMC86102

Description:: MOSFET N-CH 100V 8-MLP

ECAD Model:

Datasheet:: FDMC86102

Specifications

Fairchild/ON Semiconductor FDMC86102 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMC86102.

Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Factory Lead Time
40 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
32.13mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Resistance
24MOhm
Terminal Finish
Nickel/Palladium (Ni/Pd)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
JESD-30 Code
S-PDSO-N5
Number of Elements
1
Power Dissipation-Max
2.3W Ta 41W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.3W
Case Connection
DRAIN
Turn On Delay Time
8 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
24m Ω @ 7A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
965pF @ 50V
Current - Continuous Drain (Id) @ 25°C
7A Ta 20A Tc
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Rise Time
4ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
4 ns
Turn-Off Delay Time
14 ns
Continuous Drain Current (ID)
20A
Threshold Voltage
3.1V
JEDEC-95 Code
MO-240BA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
7A
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
30A
Avalanche Energy Rating (Eas)
72 mJ
Nominal Vgs
3.1 V
Height
950μm
Length
3.4mm
Width
3.4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDMC86102 Description
FDMC86102 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. Shielded Gate technology combined with a cutting-edge PowerTrench? technique is used to create this N-Channel MOSFET. This procedure maintains excellent switching performance while being tuned for the on-state resistance.

FDMC86102 Features
Shielded Gate MOSFET Technology
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 7 A
Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 5 A
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant

FDMC86102 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

FDMC86102 More Descriptions

N-Channel Shielded Gate Power Trench® MOSFET 100V, 20A, 24mΩ
Trans MOSFET N-CH Si 100V 7A 8-Pin Power 33 T/R / MOSFET N-CH 100V 7A POWER33
Power Field-Effect Transistor, 7A I(D), 100V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
MOSFET, N CH, 100V, 20A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0194ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.1V; Power Dissipation Pd:41W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to 150°C
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Product Comparison

The three parts on the right have similar specifications to FDMC86102.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Position

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

HTS Code

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Drain to Source Voltage (Vdss)

Published

Additional Feature

Terminal Form

Qualification Status

Number of Channels

Max Junction Temperature (Tj)

View Compare
FDMC86102

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

40 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

32.13mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e4

yes

Active

1 (Unlimited)

5

EAR99

24MOhm

Nickel/Palladium (Ni/Pd)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

2.3W Ta 41W Tc

Single

ENHANCEMENT MODE

2.3W

DRAIN

8 ns

N-Channel

SWITCHING

24m Ω @ 7A, 10V

4V @ 250μA

965pF @ 50V

7A Ta 20A Tc

18nC @ 10V

4ns

6V 10V

±20V

4 ns

14 ns

20A

3.1V

MO-240BA

20V

7A

100V

30A

72 mJ

3.1 V

950μm

3.4mm

3.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
FDMC8360LET40

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

19 Weeks

Surface Mount

Surface Mount

8-PowerWDFN

-

152.7mg

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

-

EAR99

-

Tin (Sn)

-

MOSFET (Metal Oxide)

-

-

-

2.8W Ta 75W Tc

Single

-

-

-

-

N-Channel

-

2.1m Ω @ 27A, 10V

3V @ 250μA

5300pF @ 20V

27A Ta 141A Tc

80nC @ 10V

-

4.5V 10V

±20V

-

-

141A

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

8541.29.00.95

260

not_compliant

NOT SPECIFIED

40V

-

-

-

-

-

-

FDMC86102 vs FDMC8360LET40
FDMC6675BZ

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 5 days ago)

23 Weeks

Surface Mount

Surface Mount

8-PowerWDFN

8

200mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e4

yes

Active

1 (Unlimited)

5

EAR99

14.4MOhm

Nickel/Palladium/Gold (Ni/Pd/Au)

Other Transistors

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

2.3W Ta 36W Tc

Single

ENHANCEMENT MODE

2.3W

DRAIN

11 ns

P-Channel

SWITCHING

14.4m Ω @ 9.5A, 10V

3V @ 250μA

2865pF @ 15V

9.5A Ta 20A Tc

65nC @ 10V

10ns

4.5V 10V

±25V

26 ns

44 ns

9.5A

-1.9V

-

25V

40A

-30V

32A

-

-

750μm

3.3mm

3.3mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

30V

2010

ULTRA-LOW RESISTANCE

-

-

-

-

FDMC86102 vs FDMC6675BZ
FDMC8651

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

34 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

32.13mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e4

yes

Active

1 (Unlimited)

5

EAR99

6.1MOhm

Nickel/Palladium (Ni/Pd)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

S-PDSO-N5

1

2.3W Ta 41W Tc

Single

ENHANCEMENT MODE

2.3W

DRAIN

18 ns

N-Channel

SWITCHING

6.1m Ω @ 15A, 4.5V

1.5V @ 250μA

3365pF @ 15V

15A Ta 20A Tc

27.2nC @ 4.5V

9ns

2.5V 4.5V

±12V

6 ns

35 ns

15A

800mV

-

12V

64A

30V

60A

-

1.1 V

1.05mm

3.3mm

3.3mm

No SVHC

-

ROHS3 Compliant

Lead Free

-

NOT SPECIFIED

-

NOT SPECIFIED

-

-

-

NO LEAD

Not Qualified

1

150°C

FDMC86102 vs FDMC8651