Fairchild/ON Semiconductor FDD6637
- Part Number:
- FDD6637
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2848490-FDD6637
- Description:
- MOSFET P-CH 35V 13A DPAK
- Datasheet:
- FDD6637
Fairchild/ON Semiconductor FDD6637 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD6637.
- Package / CaseTO-252
- PackagingTape & Reel (TR)
- RoHS StatusRoHS Compliant
FDD6637 Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet FDD6637 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FDD6637. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet FDD6637 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of FDD6637. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
FDD6637 More Descriptions
P-Channel 35 V 11.6 mOhm Surface Mount PowerTrench Mosfet TO-252-3
P-Channel PowerTrench® MOSFET, 35V, -55A, 11.6mΩ
P-CHANNEL POWERTRENCH MOSFET, FULL REEL; Transistor Polarity: P Channel; Continuous Drain Current Id: -13A; Drain Source Voltage Vds: -35V; On Resistance Rds(on): 9.7mohm; Rds(on) Test Voltage Vgs: -10V; Thr
Power Field-Effect Transistor, 13A I(D), 35V, 0.0116ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications.
P-Channel PowerTrench® MOSFET, 35V, -55A, 11.6mΩ
P-CHANNEL POWERTRENCH MOSFET, FULL REEL; Transistor Polarity: P Channel; Continuous Drain Current Id: -13A; Drain Source Voltage Vds: -35V; On Resistance Rds(on): 9.7mohm; Rds(on) Test Voltage Vgs: -10V; Thr
Power Field-Effect Transistor, 13A I(D), 35V, 0.0116ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications.
The three parts on the right have similar specifications to FDD6637.
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ImagePart NumberManufacturerPackage / CasePackagingRoHS StatusMounting TypeSurface MountTransistor Element MaterialOperating TemperatureSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Supplier Device PackageBase Part NumberView Compare
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FDD6637TO-252Tape & Reel (TR)RoHS Compliant--------------------------------------------
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TO-252-3, DPak (2 Leads Tab), SC-63Tape & Reel (TR)ROHS3 CompliantSurface MountYESSILICON-55°C~175°C TJPowerTrench®e3yesObsolete1 (Unlimited)2MATTE TINLOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)SINGLEGULL WING260unknownNOT SPECIFIED3R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODE3.3W Ta 56W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING10m Ω @ 12A, 10V3V @ 250μA1.23pF @ 15V12A Ta 46A Tc18nC @ 5V30V4.5V 10V±20V12A0.01Ohm100A30V180 mJ--
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TO-252-3, DPak (2 Leads Tab), SC-63Tape & Reel (TR)-Surface Mount---55°C~150°C TJUniFET™--Obsolete1 (Unlimited)---MOSFET (Metal Oxide)----------89W Tc--N-Channel-1.15Ohm @ 2.75A, 10V5V @ 250μA960pF @ 25V5.5A Tc19.8nC @ 10V500V10V±30V-----D-PakFDD6N50
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TO-252-3, DPak (2 Leads Tab), SC-63Tape & Reel (TR)ROHS3 CompliantSurface MountYESSILICON-55°C~150°C TJPowerTrench®e3yesObsolete1 (Unlimited)2MATTE TINFAST SWITCHINGMOSFET (Metal Oxide)SINGLEGULL WING260-NOT SPECIFIED3R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODE3.2W Ta 70W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING8m Ω @ 14A, 10V2V @ 250μA5.07pF @ 15V65A Ta46nC @ 4.5V30V4.5V 10V±12V65A0.008Ohm100A30V---
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