Fairchild/ON Semiconductor FDD6778A

Name: FDD6778A
Brand: Fairchild/ON Semiconductor
SKU: 2852701-FDD6778A
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDD6778A

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2852701-FDD6778A

Description:: MOSFET N-CH 25V 12A DPAK

ECAD Model:

Datasheet:: FDD6778A

Specifications

Fairchild/ON Semiconductor FDD6778A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD6778A.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
3.7W Ta 24W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
14m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
870pF @ 13V
Current - Continuous Drain (Id) @ 25°C
12A Ta 10A Tc
Gate Charge (Qg) (Max) @ Vgs
17nC @ 10V
Drain to Source Voltage (Vdss)
25V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
12A
Drain-source On Resistance-Max
0.014Ohm
Pulsed Drain Current-Max (IDM)
50A
DS Breakdown Voltage-Min
25V
Avalanche Energy Rating (Eas)
12 mJ
RoHS Status
ROHS3 Compliant

Description

FDD6778A Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 12 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 870pF @ 13V.A device's drain current is its maximum continuous current, and this device's drain current is 12A.A maximum pulsed drain current of 50A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 25V.In order to operate this transistor, a voltage of 25V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

FDD6778A Features
the avalanche energy rating (Eas) is 12 mJ
based on its rated peak drain current 50A.
a 25V drain to source voltage (Vdss)

FDD6778A Applications
There are a lot of Rochester Electronics, LLC
FDD6778A applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

FDD6778A More Descriptions

N-Channel 25V 12A (Ta), 10A (Tc) 3.7W (Ta), 24W (Tc) Surface Mount D-PAK (TO-252AA) - Bulk
25V N-Channel PowerTrench® MOSFET
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Product Comparison

The three parts on the right have similar specifications to FDD6778A.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Reach Compliance Code

Supplier Device Package

Base Part Number

View Compare
FDD6778A

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Obsolete

1 (Unlimited)

2

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

3

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

3.7W Ta 24W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

14m Ω @ 10A, 10V

3V @ 250μA

870pF @ 13V

12A Ta 10A Tc

17nC @ 10V

25V

4.5V 10V

±20V

12A

0.014Ohm

50A

25V

12 mJ

ROHS3 Compliant

-

-

-

-
FDD6782A

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

-

Obsolete

1 (Unlimited)

2

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

-

-

3

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

3.7W Ta 31W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

10.5m Ω @ 14.9A, 10V

3V @ 250μA

1.065pF @ 13V

20A Ta

27nC @ 10V

25V

4.5V 10V

±20V

20A

0.0105Ohm

100A

25V

12 mJ

ROHS3 Compliant

unknown

-

-

FDD6778A vs FDD6782A
FDD6N50FTF

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~150°C TJ

Tape & Reel (TR)

UniFET™

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

89W Tc

-

-

N-Channel

-

1.15Ohm @ 2.75A, 10V

5V @ 250μA

960pF @ 25V

5.5A Tc

19.8nC @ 10V

500V

10V

±30V

-

-

-

-

-

-

-

D-Pak

FDD6N50

FDD6778A vs FDD6N50FTF
FDD6696

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

3.8W Ta 52W Tc

-

-

N-Channel

-

8mOhm @ 13A, 10V

3V @ 250μA

1.715pF @ 15V

13A Ta 50A Tc

24nC @ 5V

30V

4.5V 10V

±16V

-

-

-

-

-

ROHS3 Compliant

-

D-PAK (TO-252)

-

FDD6778A vs FDD6696