Fairchild/ON Semiconductor FDD6606
- Part Number:
- FDD6606
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2851626-FDD6606
- Description:
- MOSFET N-CH 30V 75A D-PAK
- Datasheet:
- FDD6606
Fairchild/ON Semiconductor FDD6606 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD6606.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishNOT SPECIFIED
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max71W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs6m Ω @ 17A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2.4pF @ 15V
- Current - Continuous Drain (Id) @ 25°C75A Ta
- Gate Charge (Qg) (Max) @ Vgs31nC @ 5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)75A
- Drain-source On Resistance-Max0.006Ohm
- Pulsed Drain Current-Max (IDM)100A
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)240 mJ
- RoHS StatusROHS3 Compliant
FDD6606 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 240 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2.4pF @ 15V.The drain current is the maximum continuous current this device can conduct, which is 75A.Pulsed drain current is maximum rated peak drain current 100A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
FDD6606 Features
the avalanche energy rating (Eas) is 240 mJ
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)
FDD6606 Applications
There are a lot of Rochester Electronics, LLC
FDD6606 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 240 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2.4pF @ 15V.The drain current is the maximum continuous current this device can conduct, which is 75A.Pulsed drain current is maximum rated peak drain current 100A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
FDD6606 Features
the avalanche energy rating (Eas) is 240 mJ
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)
FDD6606 Applications
There are a lot of Rochester Electronics, LLC
FDD6606 applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
FDD6606 More Descriptions
N-Channel 30V 75A (Ta) 71W (Tc) Surface Mount D-PAK (TO-252AA) - Bulk
MOSFET N-CH 30V 75A D-PAK
MOSFETs 30V N-Ch PowerTrench
French Electronic Distributor since 1988
OEMs, CMs ONLY (NO BROKERS)
MISCELLANEOUS MOSFETS;
Contact for details
MOSFET N-CH 30V 75A D-PAK
MOSFETs 30V N-Ch PowerTrench
French Electronic Distributor since 1988
OEMs, CMs ONLY (NO BROKERS)
MISCELLANEOUS MOSFETS;
Contact for details
The three parts on the right have similar specifications to FDD6606.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusJESD-609 CodeAdditional FeatureView Compare
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FDD6606Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®yesObsolete1 (Unlimited)2NOT SPECIFIEDMOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDunknownNOT SPECIFIED3R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODE71W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING6m Ω @ 17A, 10V3V @ 250μA2.4pF @ 15V75A Ta31nC @ 5V30V4.5V 10V±20V75A0.006Ohm100A30V240 mJROHS3 Compliant---
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®-Obsolete1 (Unlimited)2-MOSFET (Metal Oxide)SINGLEGULL WING-unknown-3R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODE3.7W Ta 31W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING10.5m Ω @ 14.9A, 10V3V @ 250μA1.065pF @ 13V20A Ta27nC @ 10V25V4.5V 10V±20V20A0.0105Ohm100A25V12 mJROHS3 Compliant--
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~150°C TJTape & Reel (TR)UniFET™yesObsolete1 (Unlimited)2MATTE TINMOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDunknownNOT SPECIFIED3R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODE40W TcENHANCEMENT MODE-N-ChannelSWITCHING800m Ω @ 2.3A, 10V5V @ 250μA230pF @ 25V4.5A Tc6.1nC @ 10V200V10V±30V4.5A0.8Ohm18A200V60 mJROHS3 Compliante3-
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®yesObsolete1 (Unlimited)2MATTE TINMOSFET (Metal Oxide)SINGLEGULL WING260-NOT SPECIFIED3R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODE3.2W Ta 70W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING8m Ω @ 14A, 10V2V @ 250μA5.07pF @ 15V65A Ta46nC @ 4.5V30V4.5V 10V±12V65A0.008Ohm100A30V-ROHS3 Compliante3FAST SWITCHING
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