Fairchild/ON Semiconductor FDD6682

Name: FDD6682
Brand: Fairchild/ON Semiconductor
SKU: 3071337-FDD6682
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDD6682

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3071337-FDD6682

Description:: MOSFET N-CH 30V 75A DPAK

ECAD Model:

Datasheet:: FDD6682

Specifications

Fairchild/ON Semiconductor FDD6682 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD6682.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
71W Ta
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6.2m Ω @ 17A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2.4pF @ 15V
Current - Continuous Drain (Id) @ 25°C
75A Ta
Gate Charge (Qg) (Max) @ Vgs
31nC @ 5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
75A
Drain-source On Resistance-Max
0.0062Ohm
Pulsed Drain Current-Max (IDM)
100A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
240 mJ
RoHS Status
ROHS3 Compliant

Description

FDD6682 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 240 mJ.A device's maximal input capacitance is 2.4pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 75A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 100A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

FDD6682 Features
the avalanche energy rating (Eas) is 240 mJ
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)

FDD6682 Applications
There are a lot of Rochester Electronics, LLC
FDD6682 applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

FDD6682 More Descriptions

30V N-Channel PowerTrench® MOSFET
Power Field-Effect Transistor, 21A I(D), 30V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Product Comparison

The three parts on the right have similar specifications to FDD6682.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Reach Compliance Code

Supplier Device Package

View Compare
FDD6682

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Obsolete

1 (Unlimited)

2

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

3

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

71W Ta

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

6.2m Ω @ 17A, 10V

3V @ 250μA

2.4pF @ 15V

75A Ta

31nC @ 5V

30V

4.5V 10V

±20V

75A

0.0062Ohm

100A

30V

240 mJ

ROHS3 Compliant

-

-

-
FDD6776A

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

-

Obsolete

1 (Unlimited)

2

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

-

-

3

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

3.7W Ta 39W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

7.5m Ω @ 17.7A, 10V

3V @ 250μA

1.49pF @ 13V

17.7A Ta 30A Tc

29nC @ 10V

25V

4.5V 10V

±20V

17.7A

0.0075Ohm

100A

25V

32 mJ

ROHS3 Compliant

unknown

-

FDD6682 vs FDD6776A
FDD6778A

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Obsolete

1 (Unlimited)

2

MATTE TIN

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

3

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

3.7W Ta 24W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

14m Ω @ 10A, 10V

3V @ 250μA

870pF @ 13V

12A Ta 10A Tc

17nC @ 10V

25V

4.5V 10V

±20V

12A

0.014Ohm

50A

25V

12 mJ

ROHS3 Compliant

-

-

FDD6682 vs FDD6778A
FDD6696

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

3.8W Ta 52W Tc

-

-

N-Channel

-

8mOhm @ 13A, 10V

3V @ 250μA

1.715pF @ 15V

13A Ta 50A Tc

24nC @ 5V

30V

4.5V 10V

±16V

-

-

-

-

-

ROHS3 Compliant

-

D-PAK (TO-252)

FDD6682 vs FDD6696