Fairchild/ON Semiconductor FDD6672A
- Part Number:
- FDD6672A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2852092-FDD6672A
- Description:
- MOSFET N-CH 30V 65A D-PAK
- ECAD Model:
-
- Datasheet:
- FDD6672A
Fairchild/ON Semiconductor FDD6672A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD6672A.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Terminal FinishMATTE TIN
- Additional FeatureFAST SWITCHING
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max3.2W Ta 70W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8m Ω @ 14A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5.07pF @ 15V
- Current - Continuous Drain (Id) @ 25°C65A Ta
- Gate Charge (Qg) (Max) @ Vgs46nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±12V
- Drain Current-Max (Abs) (ID)65A
- Drain-source On Resistance-Max0.008Ohm
- Pulsed Drain Current-Max (IDM)100A
- DS Breakdown Voltage-Min30V
- RoHS StatusROHS3 Compliant
FDD6672A Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5.07pF @ 15V maximal input capacitance.A device can conduct a maximum continuous current of [65A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 100A.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
FDD6672A Features
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)
FDD6672A Applications
There are a lot of Rochester Electronics, LLC
FDD6672A applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5.07pF @ 15V maximal input capacitance.A device can conduct a maximum continuous current of [65A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 100A.The DS breakdown voltage should be maintained above 30V to maintain normal operation.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
FDD6672A Features
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)
FDD6672A Applications
There are a lot of Rochester Electronics, LLC
FDD6672A applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
FDD6672A More Descriptions
Trans MOSFET N-CH 30V 65A 3-Pin(2 Tab) TO-252AA T/R
French Electronic Distributor since 1988
MOSFET, N, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 65A; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 1.2V; Power Dissipation P
French Electronic Distributor since 1988
MOSFET, N, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 65A; Drain Source Voltage Vds: 50V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 1.2V; Power Dissipation P
The three parts on the right have similar specifications to FDD6672A.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinRoHS StatusReach Compliance CodeAvalanche Energy Rating (Eas)Supplier Device PackageBase Part NumberView Compare
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FDD6672ASurface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesObsolete1 (Unlimited)2MATTE TINFAST SWITCHINGMOSFET (Metal Oxide)SINGLEGULL WING260NOT SPECIFIED3R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODE3.2W Ta 70W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING8m Ω @ 14A, 10V2V @ 250μA5.07pF @ 15V65A Ta46nC @ 4.5V30V4.5V 10V±12V65A0.008Ohm100A30VROHS3 Compliant----- -
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®e3yesObsolete1 (Unlimited)2MATTE TINLOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)SINGLEGULL WING260NOT SPECIFIED3R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODE3.3W Ta 56W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING10m Ω @ 12A, 10V3V @ 250μA1.23pF @ 15V12A Ta 46A Tc18nC @ 5V30V4.5V 10V±20V12A0.01Ohm100A30VROHS3 Compliantunknown180 mJ--
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®e3yesObsolete1 (Unlimited)2MATTE TIN-MOSFET (Metal Oxide)SINGLEGULL WING260303R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODE3.7W Ta 24W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING14m Ω @ 10A, 10V3V @ 250μA870pF @ 13V12A Ta 10A Tc17nC @ 10V25V4.5V 10V±20V12A0.014Ohm50A25VROHS3 Compliant-12 mJ--
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~150°C TJTape & Reel (TR)UniFET™--Obsolete1 (Unlimited)---MOSFET (Metal Oxide)---------89W Tc--N-Channel-1.15Ohm @ 2.75A, 10V5V @ 250μA960pF @ 25V5.5A Tc19.8nC @ 10V500V10V±30V-------D-PakFDD6N50
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