Fairchild/ON Semiconductor FDD6696
- Part Number:
- FDD6696
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2851660-FDD6696
- Description:
- MOSFET N-CH 30V 13A D-PAK
- Datasheet:
- FDD6696, FDU6696
Fairchild/ON Semiconductor FDD6696 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD6696.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackageD-PAK (TO-252)
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max3.8W Ta 52W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs8mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1.715pF @ 15V
- Current - Continuous Drain (Id) @ 25°C13A Ta 50A Tc
- Gate Charge (Qg) (Max) @ Vgs24nC @ 5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±16V
- RoHS StatusROHS3 Compliant
FDD6696 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1.715pF @ 15V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
FDD6696 Features
a 30V drain to source voltage (Vdss)
FDD6696 Applications
There are a lot of Rochester Electronics, LLC
FDD6696 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1.715pF @ 15V.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
FDD6696 Features
a 30V drain to source voltage (Vdss)
FDD6696 Applications
There are a lot of Rochester Electronics, LLC
FDD6696 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
FDD6696 More Descriptions
N-Channel 30V 13A (Ta), 50A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount D-PAK (TO-252AA) - Bulk
MOSFET N-CH 30V 13A/50A DPAK
MOSFETs 30V N-Ch PowerTrench
N-CHANNEL POWER MOSFET
OEMs, CMs ONLY (NO BROKERS)
MISCELLANEOUS MOSFETS;
Contact for details
MOSFET N-CH 30V 13A/50A DPAK
MOSFETs 30V N-Ch PowerTrench
N-CHANNEL POWER MOSFET
OEMs, CMs ONLY (NO BROKERS)
MISCELLANEOUS MOSFETS;
Contact for details
The three parts on the right have similar specifications to FDD6696.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusSurface MountTransistor Element MaterialNumber of TerminationsTerminal PositionTerminal FormReach Compliance CodePin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)JESD-609 CodePbfree CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Additional FeatureView Compare
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FDD6696Surface MountTO-252-3, DPak (2 Leads Tab), SC-63D-PAK (TO-252)-55°C~175°C TJTape & Reel (TR)PowerTrench®Obsolete1 (Unlimited)MOSFET (Metal Oxide)3.8W Ta 52W TcN-Channel8mOhm @ 13A, 10V3V @ 250μA1.715pF @ 15V13A Ta 50A Tc24nC @ 5V30V4.5V 10V±16VROHS3 Compliant--------------------------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)PowerTrench®Obsolete1 (Unlimited)MOSFET (Metal Oxide)3.7W Ta 31W TcN-Channel10.5m Ω @ 14.9A, 10V3V @ 250μA1.065pF @ 13V20A Ta27nC @ 10V25V4.5V 10V±20VROHS3 CompliantYESSILICON2SINGLEGULL WINGunknown3R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING20A0.0105Ohm100A25V12 mJ------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~150°C TJTape & Reel (TR)UniFET™Obsolete1 (Unlimited)MOSFET (Metal Oxide)40W TcN-Channel800m Ω @ 2.3A, 10V5V @ 250μA230pF @ 25V4.5A Tc6.1nC @ 10V200V10V±30VROHS3 CompliantYESSILICON2SINGLEGULL WINGunknown3R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODE-SWITCHING4.5A0.8Ohm18A200V60 mJe3yesMATTE TINNOT SPECIFIEDNOT SPECIFIED-
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~150°C TJTape & Reel (TR)PowerTrench®Obsolete1 (Unlimited)MOSFET (Metal Oxide)3.2W Ta 70W TcN-Channel8m Ω @ 14A, 10V2V @ 250μA5.07pF @ 15V65A Ta46nC @ 4.5V30V4.5V 10V±12VROHS3 CompliantYESSILICON2SINGLEGULL WING-3R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING65A0.008Ohm100A30V-e3yesMATTE TIN260NOT SPECIFIEDFAST SWITCHING
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