Fairchild/ON Semiconductor FDD6776A
- Part Number:
- FDD6776A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3071269-FDD6776A
- Description:
- MOSFET N-CH 25V 17.7A DPAK
- ECAD Model:
-
- Datasheet:
- FD(D,U)6776A(_F071)
Fairchild/ON Semiconductor FDD6776A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD6776A.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Reach Compliance Codeunknown
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max3.7W Ta 39W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7.5m Ω @ 17.7A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1.49pF @ 13V
- Current - Continuous Drain (Id) @ 25°C17.7A Ta 30A Tc
- Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
- Drain to Source Voltage (Vdss)25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)17.7A
- Drain-source On Resistance-Max0.0075Ohm
- Pulsed Drain Current-Max (IDM)100A
- DS Breakdown Voltage-Min25V
- Avalanche Energy Rating (Eas)32 mJ
- RoHS StatusROHS3 Compliant
FDD6776A Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 32 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1.49pF @ 13V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 17.7A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 100A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 25V in order to maintain normal operation.Operating this transistor requires a 25V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
FDD6776A Features
the avalanche energy rating (Eas) is 32 mJ
based on its rated peak drain current 100A.
a 25V drain to source voltage (Vdss)
FDD6776A Applications
There are a lot of Rochester Electronics, LLC
FDD6776A applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 32 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1.49pF @ 13V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 17.7A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 100A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 25V in order to maintain normal operation.Operating this transistor requires a 25V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
FDD6776A Features
the avalanche energy rating (Eas) is 32 mJ
based on its rated peak drain current 100A.
a 25V drain to source voltage (Vdss)
FDD6776A Applications
There are a lot of Rochester Electronics, LLC
FDD6776A applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
FDD6776A More Descriptions
N-Channel 25V 17.7A (Ta), 30A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount D-PAK (TO-252AA) - Bulk
MOSFET 25V 30A N-Channel PowerTrench
MOSFET N-CH 25V 17.7A/30A DPAK
MOSFET 25V 30A N-Channel PowerTrench
MOSFET N-CH 25V 17.7A/30A DPAK
The three parts on the right have similar specifications to FDD6776A.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyTerminal PositionTerminal FormReach Compliance CodePin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusJESD-609 CodePbfree CodeTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Supplier Device PackageView Compare
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FDD6776ASurface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®Obsolete1 (Unlimited)2MOSFET (Metal Oxide)SINGLEGULL WINGunknown3R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODE3.7W Ta 39W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING7.5m Ω @ 17.7A, 10V3V @ 250μA1.49pF @ 13V17.7A Ta 30A Tc29nC @ 10V25V4.5V 10V±20V17.7A0.0075Ohm100A25V32 mJROHS3 Compliant------- -
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~150°C TJTape & Reel (TR)UniFET™Obsolete1 (Unlimited)2MOSFET (Metal Oxide)SINGLEGULL WINGunknown3R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODE40W TcENHANCEMENT MODE-N-ChannelSWITCHING800m Ω @ 2.3A, 10V5V @ 250μA230pF @ 25V4.5A Tc6.1nC @ 10V200V10V±30V4.5A0.8Ohm18A200V60 mJROHS3 Compliante3yesMATTE TINNOT SPECIFIEDNOT SPECIFIED-
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63---55°C~175°C TJTape & Reel (TR)PowerTrench®Obsolete1 (Unlimited)-MOSFET (Metal Oxide)--------3.8W Ta 52W Tc--N-Channel-8mOhm @ 13A, 10V3V @ 250μA1.715pF @ 15V13A Ta 50A Tc24nC @ 5V30V4.5V 10V±16V-----ROHS3 Compliant-----D-PAK (TO-252)
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YESSILICON-55°C~175°C TJTape & Reel (TR)PowerTrench®Obsolete1 (Unlimited)2MOSFET (Metal Oxide)SINGLEGULL WINGunknown3R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODE71W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING6m Ω @ 17A, 10V3V @ 250μA2.4pF @ 15V75A Ta31nC @ 5V30V4.5V 10V±20V75A0.006Ohm100A30V240 mJROHS3 Compliant-yesNOT SPECIFIEDNOT SPECIFIEDNOT SPECIFIED-
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