Fairchild/ON Semiconductor FDD6680

Name: FDD6680
Brand: Fairchild/ON Semiconductor
SKU: 3071288-FDD6680
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDD6680

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3071288-FDD6680

Description:: MOSFET N-CH 30V 12A DPAK

ECAD Model:

Datasheet:: FDD6680, FDU6680

Specifications

Fairchild/ON Semiconductor FDD6680 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD6680.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
MATTE TIN
Additional Feature
LOGIC LEVEL COMPATIBLE
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSSO-G2
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
3.3W Ta 56W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
10m Ω @ 12A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1.23pF @ 15V
Current - Continuous Drain (Id) @ 25°C
12A Ta 46A Tc
Gate Charge (Qg) (Max) @ Vgs
18nC @ 5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
12A
Drain-source On Resistance-Max
0.01Ohm
Pulsed Drain Current-Max (IDM)
100A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
180 mJ
RoHS Status
ROHS3 Compliant

Description

FDD6680 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 180 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1.23pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 12A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 100A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

FDD6680 Features
the avalanche energy rating (Eas) is 180 mJ
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)

FDD6680 Applications
There are a lot of Rochester Electronics, LLC
FDD6680 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

FDD6680 More Descriptions

MOSFET N-CH 30V 12A DPAK
Banana and Tip Connectors - Binding Posts Smooth, Spring Loaded Threaded and Turret Black Standard Brass Nickel Not Applicable 0.500 OD 12.70mm 2 Weeks CONN BIND POST SPRING-LOAD BLACK
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:56A; On Resistance, Rds(on):0.0095ohm; Package/Case:TO-252; Power Dissipation, Pd:60W; Drain Source On Resistance @ 10V:17ohm ;RoHS Compliant: No

Product Comparison

The three parts on the right have similar specifications to FDD6680.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Additional Feature

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Supplier Device Package

View Compare
FDD6680

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Obsolete

1 (Unlimited)

2

MATTE TIN

LOGIC LEVEL COMPATIBLE

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

unknown

NOT SPECIFIED

3

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

3.3W Ta 56W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

10m Ω @ 12A, 10V

3V @ 250μA

1.23pF @ 15V

12A Ta 46A Tc

18nC @ 5V

30V

4.5V 10V

±20V

12A

0.01Ohm

100A

30V

180 mJ

ROHS3 Compliant

-

-
FDD6782A

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

-

Obsolete

1 (Unlimited)

2

-

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

-

unknown

-

3

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

3.7W Ta 31W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

10.5m Ω @ 14.9A, 10V

3V @ 250μA

1.065pF @ 13V

20A Ta

27nC @ 10V

25V

4.5V 10V

±20V

20A

0.0105Ohm

100A

25V

12 mJ

ROHS3 Compliant

-

FDD6680 vs FDD6782A
FDD6696

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

-

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

3.8W Ta 52W Tc

-

-

N-Channel

-

8mOhm @ 13A, 10V

3V @ 250μA

1.715pF @ 15V

13A Ta 50A Tc

24nC @ 5V

30V

4.5V 10V

±16V

-

-

-

-

-

ROHS3 Compliant

D-PAK (TO-252)

FDD6680 vs FDD6696
FDD6606

Fairchild/ON Semiconductor

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

-

yes

Obsolete

1 (Unlimited)

2

NOT SPECIFIED

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

unknown

NOT SPECIFIED

3

R-PSSO-G2

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

71W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

6m Ω @ 17A, 10V

3V @ 250μA

2.4pF @ 15V

75A Ta

31nC @ 5V

30V

4.5V 10V

±20V

75A

0.006Ohm

100A

30V

240 mJ

ROHS3 Compliant

-

FDD6680 vs FDD6606

Certification

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Part Number	Manufacturers	Description	Stock	Price
FDD6680AS DISTI #FDD6680ASFSCT-ND	ON Semiconductor	MOSFET N-CH 30V 55A DPAK RoHS: Compliant	2400	1 $1.03 10 $0.917 100 $0.7152 500 $0.59078 1000 $0.4664
FDD6680AS DISTI #FDD6680ASFSDKR-ND	ON Semiconductor	MOSFET N-CH 30V 55A DPAK RoHS: Compliant	2400	1 $1.03 10 $0.917 100 $0.7152 500 $0.59078 1000 $0.4664
FDD6680 DISTI #FDD6680-ND	ON Semiconductor	MOSFET N-CH 30V 12A DPAK RoHS: Compliant	0
FDD6680A DISTI #FDD6680A-ND	ON Semiconductor	MOSFET N-CH 30V 14A DPAK RoHS: Compliant	0
FDD6680AS DISTI #FDD6680ASFSTR-ND	ON Semiconductor	MOSFET N-CH 30V 55A DPAK RoHS: Compliant	0	2500 $0.42262 5000 $0.40149 12500 $0.3864 25000 $0.38238
FDD6680AS DISTI #FDD6680AS	ON Semiconductor	Trans MOSFET N-CH 30V 55A 3-Pin(2 Tab) TO-252AA T/ RoHS: Compliant	0	2500 $0.4899 5000 $0.4869 10000 $0.4799 15000 $0.4739 25000 $0.4619
FDD6680AS DISTI #FDD6680AS	ON Semiconductor	Trans MOSFET N-CH 30V 55A 3-Pin(2 Tab) TO-252AA T/ RoHS: Compliant	0	596 $0.5489 1192 $0.5449 1788 $0.5379 2980 $0.5309 5960 $0.5179
FDD6680AS DISTI #FDD6680AS	ON Semiconductor	Trans MOSFET N-CH 30V 55A 3-Pin(2 Tab) TO-252AA T/ RoHS: Compliant	0	2500 $0.4829 5000 $0.3949 10000 $0.3619 15000 $0.3339 25000 $0.3099
FDD6680AS DISTI #FDD6680AS	ON Semiconductor	Trans MOSFET N-CH 30V 55A 3-Pin(2 Tab) TO-252AA T/ RoHS: Compliant	0	2500 $0.5 5000 $0.48077 7500 $0.46296 12500 $0.44643 25000 $0.43103 62500 $0.41667 125000 $0.40984
FDD6680AS DISTI #64K0967	ON Semiconductor	MOSFET Transistor, N Channel, 55 A, 30 V, 10.5 moh	0	1 $0.495 3000 $0.475 6000 $0.432 12000 $0.389 18000 $0.374 30000 $0.366
FDD6680AS DISTI #61M6227	ON Semiconductor	MOSFET, N, SMD, TO-252, Transistor Polarity:N Cha	2211	1 $1.03 10 $0.882 25 $0.82 50 $0.757 100 $0.695 250 $0.658 500 $0.622 1000 $0.506
FDD6680 DISTI #512-FDD6680	ON Semiconductor	MOSFET 30V N-Ch PowerTrench RoHS: Compliant	0
FDD6680_Q DISTI #512-FDD6680_Q	ON Semiconductor	MOSFET 30V N-Ch PowerTrench RoHS: Not Compliant	0
FDD6680AS DISTI #512-FDD6680AS	ON Semiconductor	MOSFET 30V NCH DPAK POWR TRENCH RoHS: Compliant	2656	1 $0.94 10 $0.805 100 $0.619 500 $0.547 1000 $0.432
FDD6680A DISTI #512-FDD6680A	ON Semiconductor	MOSFET 30V N-Ch PowerTrench RoHS: Compliant	0
FDD6680A_Q DISTI #512-FDD6680A_Q	ON Semiconductor	MOSFET 30V N-Ch PowerTrench RoHS: Not Compliant	0
FDD6680S DISTI #512-FDD6680S	ON Semiconductor	MOSFET 30V N-Ch PowerTrench RoHS: Not Compliant	0
FDD6680 DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 12A I(D), 30V, 0.01 RoHS: Compliant	874679	1 $1.72 25 $1.59 100 $1.53 500 $1.47 1000 $1.4
FDD6680A DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 14A I(D), 30V, 0.00 RoHS: Compliant	209395	1 $1.72 25 $1.59 100 $1.53 500 $1.47 1000 $1.4
FDD6680AS DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 55A I(D), 30V, 0.01 RoHS: Compliant	12985	1 $0.68 25 $0.63 100 $0.61 500 $0.58 1000 $0.55
FDD6680S DISTI #	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 55A I(D), 30V, 0.01 RoHS: Compliant	31202	1 $1.72 25 $1.59 100 $1.53 500 $1.47 1000 $1.4
FDD6680 DISTI #	Fairchild Semiconductor Corporation	12 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET	4853	1 $1.36 1883 $0.374 4012 $0.357
FDD6680A DISTI #	Fairchild Semiconductor Corporation	MOSFET Transistor, N-Channel, TO-252AA	7541	1 $1.44 1779 $0.396 3789 $0.378
FDD6680A DISTI #	Freescale Semiconductor	MOSFET Transistor, N-Channel, TO-252AA	998	1 $1.8 57 $0.9 223 $0.72
FDD6680A DISTI #	Fairchild Semiconductor Corporation	MOSFET Transistor, N-Channel, TO-252AA	2000	1 $1.5905 420 $0.4135 1936 $0.3976
FDD6680S DISTI #	Fairchild Semiconductor Corporation	55 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFE	2070	1 $2.13 677 $0.8165 1226 $0.7455
FDD6680A DISTI #	Fairchild Semiconductor Corporation		25743
FDD6680A DISTI #	Fairchild Semiconductor Corporation		25956
FDD6680A DISTI #2479328	ON Semiconductor	N CHANNEL MOSFET, 30V, 56A RoHS: Compliant	0	2500 $5.82
FDD6680AS DISTI #1495268RL	ON Semiconductor	MOSFET, N, SMD, TO-252 RoHS: Compliant	0	1 $1.45 10 $1.24 100 $0.952 500 $0.841 1000 $0.665 2500 $0.651
FDD6680AS DISTI #1495268	ON Semiconductor	MOSFET, N, SMD, TO-252 RoHS: Compliant	2111	1 $1.45 10 $1.24 100 $0.952 500 $0.841 1000 $0.665 2500 $0.651
FDD6680AS DISTI #1495268	ON Semiconductor	MOSFET, N, SMD, TO-252	1240	5 $0.694 25 $0.558 100 $0.43 250 $0.405 500 $0.38

Fairchild/ON Semiconductor FDD6680

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