Fairchild/ON Semiconductor FDD6N20TF

FDD6N20TF Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 60 mJ.A device's maximum input capacitance is 230pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its drain current is 4.5A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 18A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 200V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

FDD6N20TF Features
the avalanche energy rating (Eas) is 60 mJ
based on its rated peak drain current 18A.
a 200V drain to source voltage (Vdss)


FDD6N20TF Applications
There are a lot of Rochester Electronics, LLC
FDD6N20TF applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters