Fairchild/ON Semiconductor FDD6N50FTF
- Part Number:
- FDD6N50FTF
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2852568-FDD6N50FTF
- Description:
- MOSFET N-CH 500V 5.5A DPAK
- Datasheet:
- FDD6N50FTF
Fairchild/ON Semiconductor FDD6N50FTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDD6N50FTF.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Supplier Device PackageD-Pak
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesUniFET™
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberFDD6N50
- Power Dissipation-Max89W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.15Ohm @ 2.75A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds960pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5.5A Tc
- Gate Charge (Qg) (Max) @ Vgs19.8nC @ 10V
- Drain to Source Voltage (Vdss)500V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
FDD6N50FTF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 960pF @ 25V.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
FDD6N50FTF Features
a 500V drain to source voltage (Vdss)
FDD6N50FTF Applications
There are a lot of ON Semiconductor
FDD6N50FTF applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 960pF @ 25V.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
FDD6N50FTF Features
a 500V drain to source voltage (Vdss)
FDD6N50FTF Applications
There are a lot of ON Semiconductor
FDD6N50FTF applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
FDD6N50FTF More Descriptions
MOSFET N-CH 500V 5.5A DPAK
MOSFETs 500V N-CHANNEL
MOSFETs 500V N-CHANNEL
The three parts on the right have similar specifications to FDD6N50FTF.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyBase Part NumberPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Surface MountTransistor Element MaterialNumber of TerminationsTerminal PositionTerminal FormReach Compliance CodePin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusJESD-609 CodePbfree CodeTerminal FinishAdditional FeaturePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)View Compare
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FDD6N50FTFSurface MountTO-252-3, DPak (2 Leads Tab), SC-63D-Pak-55°C~150°C TJTape & Reel (TR)UniFET™Obsolete1 (Unlimited)MOSFET (Metal Oxide)FDD6N5089W TcN-Channel1.15Ohm @ 2.75A, 10V5V @ 250μA960pF @ 25V5.5A Tc19.8nC @ 10V500V10V±30V---------------------------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)PowerTrench®Obsolete1 (Unlimited)MOSFET (Metal Oxide)-3.7W Ta 31W TcN-Channel10.5m Ω @ 14.9A, 10V3V @ 250μA1.065pF @ 13V20A Ta27nC @ 10V25V4.5V 10V±20VYESSILICON2SINGLEGULL WINGunknown3R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING20A0.0105Ohm100A25V12 mJROHS3 Compliant------
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Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~150°C TJTape & Reel (TR)PowerTrench®Obsolete1 (Unlimited)MOSFET (Metal Oxide)-3.2W Ta 70W TcN-Channel8m Ω @ 14A, 10V2V @ 250μA5.07pF @ 15V65A Ta46nC @ 4.5V30V4.5V 10V±12VYESSILICON2SINGLEGULL WING-3R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING65A0.008Ohm100A30V-ROHS3 Compliante3yesMATTE TINFAST SWITCHING260NOT SPECIFIED
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63--55°C~175°C TJTape & Reel (TR)PowerTrench®Obsolete1 (Unlimited)MOSFET (Metal Oxide)-71W TcN-Channel6m Ω @ 17A, 10V3V @ 250μA2.4pF @ 15V75A Ta31nC @ 5V30V4.5V 10V±20VYESSILICON2SINGLEGULL WINGunknown3R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING75A0.006Ohm100A30V240 mJROHS3 Compliant-yesNOT SPECIFIED-NOT SPECIFIEDNOT SPECIFIED
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