STMicroelectronics STP35NF10

Name: STP35NF10
Brand: STMicroelectronics
SKU: 2480541-STP35NF10
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP35NF10

Manufacturer:: STMicroelectronics

Ventron No:: 2480541-STP35NF10

Description:: MOSFET N-CH 100V 40A TO-220

ECAD Model:

Datasheet:: ST(B,P)35NF10

Specifications

STMicroelectronics STP35NF10 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP35NF10.

Lifecycle Status
NRND (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
35mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Current Rating
40A
Base Part Number
STP35N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
115W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
115W
Case Connection
DRAIN
Turn On Delay Time
17 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
35m Ω @ 17.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1550pF @ 25V
Current - Continuous Drain (Id) @ 25°C
40A Tc
Gate Charge (Qg) (Max) @ Vgs
55nC @ 10V
Rise Time
60ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
60 ns
Continuous Drain Current (ID)
40A
Threshold Voltage
3V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Height
9.15mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP35NF10 Description
This Power MOSFET series, which was created using STMicroelectronics' unique STripFET technology, was created with the goal of reducing input capacitance and gate charge. As a result, it can be used as the principal switch in sophisticated high-efficiency isolated DC-DC converters for telecom and computer use. It's also suitable for any application requiring a low gate charge drive.

STP35NF10 Features
Outstanding dv/dt capabilities
Avalanche-proofed to the nth degree
Application-oriented characterization is a type of characterization that focuses on a specific application.

STP35NF10 Applications
Switching applications

STP35NF10 More Descriptions

N-Channel 100V - 0.030 Ohm - 40A - TO-220 LOW GATE CHARGE StripFET(TM) POWER MOSFET
N-Channel 100 V .035 Ohm Flange Mount STripFET II Power MosFet - TO-220
Trans MOSFET N-CH 100V 40A 3-Pin(3 Tab) TO-220AB Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 115 W
Transistor N-Channel Power MOSFET 100V 40A
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Source Voltage Vds:100V; On Resistance Rds(on):0.035ohm;
Power Field-Effect Transistor, 40A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 115W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Alternate Case Style: SOT-78B; Avalanche Single Pulse Energy Eas: 13mJ; Capacitance Ciss Typ: 1550pF; Current Id Max: 40A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Spacing: 2.54mm; No. of Transistors: 1; On State resistance @ Vgs = 10V: 35mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Pin Configuration: a; Power Dissipation Ptot Max: 115W; Pulse Current Idm: 160A; Reverse Recovery Time trr Typ: 160ns; Voltage Vds Typ: 100V; Voltage Vgs Max: 3V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V; Voltage Vgs th Min: 2V

Product Comparison

The three parts on the right have similar specifications to STP35NF10.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Factory Lead Time

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Drain Current-Max (Abs) (ID)

View Compare
STP35NF10

STMicroelectronics

NRND (Last Updated: 8 months ago)

Through Hole

Through Hole

TO-220-3

3

4.535924g

SILICON

-55°C~175°C TJ

Tube

STripFET™ II

e3

Not For New Designs

1 (Unlimited)

3

EAR99

35mOhm

Matte Tin (Sn)

FET General Purpose Power

100V

MOSFET (Metal Oxide)

40A

STP35N

3

1

115W Tc

Single

ENHANCEMENT MODE

115W

DRAIN

17 ns

N-Channel

SWITCHING

35m Ω @ 17.5A, 10V

4V @ 250μA

1550pF @ 25V

40A Tc

55nC @ 10V

60ns

10V

±20V

15 ns

60 ns

40A

3V

TO-220AB

20V

100V

9.15mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
STP33N65M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

Through Hole

Through Hole

TO-220-3

3

-

SILICON

150°C TJ

Tube

MDmesh™ M2

-

Active

1 (Unlimited)

3

EAR99

-

-

-

-

MOSFET (Metal Oxide)

-

STP33N

-

1

190W Tc

Single

ENHANCEMENT MODE

-

DRAIN

13.5 ns

N-Channel

SWITCHING

140m Ω @ 12A, 10V

4V @ 250μA

1790pF @ 100V

24A Tc

41.5nC @ 10V

-

10V

±25V

-

72.5 ns

24A

-

TO-220AB

25V

-

15.75mm

10.4mm

4.6mm

-

-

ROHS3 Compliant

-

16 Weeks

650V

0.14Ohm

96A

650V

780 mJ

-

-

-

-

-

-

STP35NF10 vs STP33N65M2
STP36N55M5

STMicroelectronics

-

Through Hole

Through Hole

TO-220-3

3

-

SILICON

150°C TJ

Tube

MDmesh™ V

-

Active

1 (Unlimited)

3

EAR99

-

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP36N

-

1

190W Tc

Single

ENHANCEMENT MODE

190W

DRAIN

56 ns

N-Channel

SWITCHING

80m Ω @ 16.5A, 10V

5V @ 250μA

2670pF @ 100V

33A Tc

62nC @ 10V

-

10V

±25V

-

56 ns

33A

-

TO-220AB

25V

550V

15.75mm

10.4mm

4.6mm

-

No

ROHS3 Compliant

Lead Free

17 Weeks

-

0.08Ohm

-

-

-

-

-

-

-

-

-

STP35NF10 vs STP36N55M5
STP3NB100

STMicroelectronics

-

Through Hole

Through Hole

TO-220-3

-

-

SILICON

150°C TJ

Tube

PowerMESH™

e3

Obsolete

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

1kV

MOSFET (Metal Oxide)

3A

STP3N

3

1

100W Tc

Single

ENHANCEMENT MODE

100W

-

-

N-Channel

SWITCHING

6 Ω @ 1.5A, 10V

4V @ 250μA

700pF @ 25V

3A Tc

30nC @ 10V

12ns

10V

±30V

28 ns

-

3A

-

TO-220AB

30V

1kV

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

-

1000V

6Ohm

12A

-

244 mJ

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSFM-T3

Not Qualified

3A

STP35NF10 vs STP3NB100