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STP185N10F3

STMicroelectronics STP185N10F3

Part Number:
STP185N10F3
Manufacturer:
STMicroelectronics
Ventron No:
2484820-STP185N10F3
Description:
MOSFET N-CH 100V 120A TO220
ECAD Model:
Datasheet:
STP185N10F3

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Specifications
STMicroelectronics STP185N10F3 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP185N10F3.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    STripFET™
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Base Part Number
    STP185
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    300W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.8m Ω @ 60A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C
    120A Tc
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    120A
  • JEDEC-95 Code
    TO-220AB
  • Drain-source On Resistance-Max
    0.0048Ohm
  • Pulsed Drain Current-Max (IDM)
    480A
  • DS Breakdown Voltage-Min
    100V
  • RoHS Status
    ROHS3 Compliant
Description
STP185N10F3 Overview
The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 120A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 480A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 100V in order to maintain normal operation.Operating this transistor requires a 100V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

STP185N10F3 Features
a continuous drain current (ID) of 120A
based on its rated peak drain current 480A.
a 100V drain to source voltage (Vdss)


STP185N10F3 Applications
There are a lot of STMicroelectronics
STP185N10F3 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
STP185N10F3 More Descriptions
Trans MOSFET N-CH 100V 120A 3-Pin TO-220 Tube
Power Field-Effect Transistor, 120A I(D), 100V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
CAP CER 1800PF 250V C0G RADIAL
Product Comparison
The three parts on the right have similar specifications to STP185N10F3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Technology
    Terminal Position
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Current - Continuous Drain (Id) @ 25°C
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    RoHS Status
    Lifecycle Status
    Number of Pins
    JESD-609 Code
    Resistance
    Terminal Finish
    Additional Feature
    Voltage - Rated DC
    Current Rating
    Number of Channels
    Element Configuration
    Power Dissipation
    Case Connection
    Turn On Delay Time
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    Radiation Hardening
    Lead Free
    Fall Time (Typ)
    Turn-Off Delay Time
    REACH SVHC
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    View Compare
  • STP185N10F3
    STP185N10F3
    STMicroelectronics
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    -55°C~175°C TJ
    Tube
    STripFET™
    Active
    1 (Unlimited)
    3
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    STP185
    3
    R-PSFM-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    300W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    4.8m Ω @ 60A, 10V
    4V @ 250μA
    120A Tc
    100V
    10V
    ±20V
    120A
    TO-220AB
    0.0048Ohm
    480A
    100V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP12NM50FP
    STP12NM50FP
    STMicroelectronics
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    SILICON
    -65°C~150°C TJ
    Tube
    MDmesh™
    Active
    1 (Unlimited)
    3
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    STP12
    3
    -
    -
    1
    -
    35W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    350m Ω @ 6A, 10V
    5V @ 50μA
    12A Tc
    -
    10V
    ±30V
    12A
    TO-220AB
    -
    48A
    -
    ROHS3 Compliant
    ACTIVE (Last Updated: 8 months ago)
    3
    e3
    350mOhm
    Matte Tin (Sn) - annealed
    AVALANCHE RATED
    500V
    12A
    1
    Single
    35W
    ISOLATED
    20 ns
    1000pF @ 25V
    39nC @ 10V
    10ns
    4V
    30V
    500V
    400 mJ
    150°C
    20mm
    10.4mm
    4.6mm
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    STP185N10F3 vs STP12NM50FP
  • STP18NM60N
    STP18NM60N
    STMicroelectronics
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    -55°C~150°C TJ
    Tube
    MDmesh™ II
    Active
    1 (Unlimited)
    3
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    STP18N
    3
    -
    -
    1
    -
    110W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    285m Ω @ 6.5A, 10V
    4V @ 250μA
    13A Tc
    -
    10V
    ±25V
    13A
    TO-220AB
    -
    52A
    -
    ROHS3 Compliant
    ACTIVE (Last Updated: 8 months ago)
    3
    -
    285mOhm
    -
    -
    -
    -
    -
    Single
    110W
    -
    12 ns
    1000pF @ 50V
    35nC @ 10V
    15ns
    3V
    25V
    600V
    -
    -
    15.75mm
    10.4mm
    4.6mm
    No
    Lead Free
    25 ns
    55 ns
    No SVHC
    -
    -
    -
    STP185N10F3 vs STP18NM60N
  • STP150N3LLH6
    STP150N3LLH6
    STMicroelectronics
    -
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    -55°C~175°C TJ
    Tube
    DeepGATE™, STripFET™ VI
    Obsolete
    1 (Unlimited)
    3
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    STP150
    3
    R-PSFM-T3
    Not Qualified
    1
    -
    110W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    3.3m Ω @ 40A, 10V
    2.5V @ 250μA
    80A Tc
    -
    4.5V 10V
    ±20V
    80A
    TO-220AB
    -
    320A
    -
    ROHS3 Compliant
    -
    -
    e3
    3.3MOhm
    Matte Tin (Sn)
    -
    -
    -
    -
    Single
    110W
    DRAIN
    -
    4040pF @ 25V
    40nC @ 4.5V
    18ns
    -
    20V
    30V
    525 mJ
    -
    -
    -
    -
    -
    Lead Free
    46 ns
    75 ns
    -
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    STP185N10F3 vs STP150N3LLH6
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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