STMicroelectronics STP17NK40Z

Name: STP17NK40Z
Brand: STMicroelectronics
SKU: 2484826-STP17NK40Z
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP17NK40Z

Manufacturer:: STMicroelectronics

Ventron No:: 2484826-STP17NK40Z

Description:: MOSFET N-CH 400V 15A TO-220

ECAD Model:

Datasheet:: STP17NK40Z

Specifications

STMicroelectronics STP17NK40Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP17NK40Z.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
400V
Technology
MOSFET (Metal Oxide)
Current Rating
15A
Base Part Number
STP17N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
150W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
150W
Turn On Delay Time
25 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
250m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C
15A Tc
Gate Charge (Qg) (Max) @ Vgs
65nC @ 10V
Rise Time
23ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
55 ns
Continuous Drain Current (ID)
7.5A
Threshold Voltage
3.75V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain-source On Resistance-Max
0.25Ohm
Drain to Source Breakdown Voltage
400V
Pulsed Drain Current-Max (IDM)
60A
Avalanche Energy Rating (Eas)
450 mJ
Nominal Vgs
3.75 V
Height
15.75mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP17NK40Z Description The STP17NK40Z is made possible by a thorough optimization of ST's well-known strip-based PowerMESHTM layout. In addition to lowering on-resistance, special attention is paid to ensuring excellent dv/dt capability for the most demanding applications. ST's comprehensive portfolio of high voltage MOSFETs, including the groundbreaking MDmeshTM devices, is complemented by this series.
STP17NK40Z Features VERY GOOD MANUFACTURING REPEATABILITY
TYPICAL RDS(on) = 0.23 Ω
100% AVALANCHE TESTED
EXTREMELY HIGH dv/dt CAPABILITY
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
STP17NK40Z Applications HIGH CURRENT, HIGH-SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES
ADAPTORS AND PFC
LIGHTING

STP17NK40Z More Descriptions

N-CHANNEL 400V - 0.23 Ohm - 15A TO-220 Zener-Protected SuperMESH(TM) Power MOSFET
Power Field-Effect Transistor, 15A I(D), 400V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 400V, 15A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:7.5A; Drain Source Voltage Vds:400V; On Resistance Rds(on):230mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:15A; Package / Case:TO-220; Power Dissipation Pd:150W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:400V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to STP17NK40Z.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Resistance

Additional Feature

Number of Channels

Case Connection

Max Junction Temperature (Tj)

Configuration

Drain to Source Voltage (Vdss)

View Compare
STP17NK40Z

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

400V

MOSFET (Metal Oxide)

15A

STP17N

3

1

150W Tc

Single

ENHANCEMENT MODE

150W

25 ns

N-Channel

SWITCHING

250m Ω @ 7.5A, 10V

4.5V @ 100μA

1900pF @ 25V

15A Tc

65nC @ 10V

23ns

10V

±30V

13 ns

55 ns

7.5A

3.75V

TO-220AB

30V

0.25Ohm

400V

60A

450 mJ

3.75 V

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
STP12NM50FP

STMicroelectronics

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-65°C~150°C TJ

Tube

MDmesh™

e3

-

Active

1 (Unlimited)

3

-

Matte Tin (Sn) - annealed

FET General Purpose Power

500V

MOSFET (Metal Oxide)

12A

STP12

3

1

35W Tc

Single

ENHANCEMENT MODE

35W

20 ns

N-Channel

SWITCHING

350m Ω @ 6A, 10V

5V @ 50μA

1000pF @ 25V

12A Tc

39nC @ 10V

10ns

10V

±30V

-

-

12A

4V

TO-220AB

30V

-

500V

48A

400 mJ

-

20mm

10.4mm

4.6mm

-

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

16 Weeks

350mOhm

AVALANCHE RATED

1

ISOLATED

150°C

-

-

STP17NK40Z vs STP12NM50FP
STP18NM60N

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II

-

-

Active

1 (Unlimited)

3

EAR99

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP18N

3

1

110W Tc

Single

ENHANCEMENT MODE

110W

12 ns

N-Channel

SWITCHING

285m Ω @ 6.5A, 10V

4V @ 250μA

1000pF @ 50V

13A Tc

35nC @ 10V

15ns

10V

±25V

25 ns

55 ns

13A

3V

TO-220AB

25V

-

600V

52A

-

-

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

16 Weeks

285mOhm

-

-

-

-

-

-

STP17NK40Z vs STP18NM60N
STP16N60M2

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

-

150°C TJ

Tube

MDmesh™ M2

-

-

Active

1 (Unlimited)

-

EAR99

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP16N

-

-

110W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

-

320m Ω @ 6A, 10V

4V @ 250μA

700pF @ 100V

12A Tc

19nC @ 10V

-

10V

±25V

-

-

12A

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

ACTIVE (Last Updated: 8 months ago)

16 Weeks

-

-

-

-

-

Single

600V

STP17NK40Z vs STP16N60M2