STMicroelectronics STP16NS25FP

STP16NS25FP Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 600 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1270pF @ 25V.This device conducts a continuous drain current (ID) of 16A, which is the maximum continuous current transistor can conduct.Using VGS=250V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 250V (that is, no charge flow from drain to source).Pulsed drain current is maximum rated peak drain current 64A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

STP16NS25FP Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 250V voltage
based on its rated peak drain current 64A.


STP16NS25FP Applications
There are a lot of STMicroelectronics
STP16NS25FP applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching