STMicroelectronics STP16NK65Z
- Part Number:
- STP16NK65Z
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3586345-STP16NK65Z
- Description:
- MOSFET N-CH 650V 13A TO-220
- Datasheet:
- STP16NK65Z(-S)
STMicroelectronics STP16NK65Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP16NK65Z.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSuperMESH™
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin (Sn)
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- Voltage - Rated DC650V
- TechnologyMOSFET (Metal Oxide)
- Current Rating13A
- Base Part NumberSTP16N
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- Power Dissipation-Max190W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation190W
- Turn On Delay Time25 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs500m Ω @ 6.5A, 10V
- Vgs(th) (Max) @ Id4.5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds2750pF @ 25V
- Current - Continuous Drain (Id) @ 25°C13A Tc
- Gate Charge (Qg) (Max) @ Vgs89nC @ 10V
- Rise Time25ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)17 ns
- Turn-Off Delay Time68 ns
- Continuous Drain Current (ID)13A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain-source On Resistance-Max0.5Ohm
- Drain to Source Breakdown Voltage650V
- Pulsed Drain Current-Max (IDM)52A
- Avalanche Energy Rating (Eas)350 mJ
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
STP16NK65Z Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 350 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2750pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 13A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 68 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 52A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 25 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STP16NK65Z Features
the avalanche energy rating (Eas) is 350 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 52A.
STP16NK65Z Applications
There are a lot of STMicroelectronics
STP16NK65Z applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 350 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2750pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 13A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 68 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 52A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 25 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STP16NK65Z Features
the avalanche energy rating (Eas) is 350 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 52A.
STP16NK65Z Applications
There are a lot of STMicroelectronics
STP16NK65Z applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
STP16NK65Z More Descriptions
Trans MOSFET N-CH 650V 13A 3-Pin(3 Tab) TO-220 Tube
Power MOSFET Transistors N Ch 650 V 0.38 Ohm 13A
Power Field-Effect Transistor, 13A I(D), 650V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
French Electronic Distributor since 1988
CAP CER 150PF 250V C0G/NP0 RAD
Power MOSFET Transistors N Ch 650 V 0.38 Ohm 13A
Power Field-Effect Transistor, 13A I(D), 650V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
French Electronic Distributor since 1988
CAP CER 150PF 250V C0G/NP0 RAD
The three parts on the right have similar specifications to STP16NK65Z.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyCurrent RatingBase Part NumberPin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Radiation HardeningRoHS StatusNumber of PinsPbfree CodeECCN CodeResistanceThreshold VoltageHeightLengthWidthREACH SVHCLead FreeLifecycle StatusFactory Lead TimeNumber of ChannelsCase ConnectionMax Junction Temperature (Tj)View Compare
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STP16NK65ZThrough HoleThrough HoleTO-220-3SILICON-55°C~150°C TJTubeSuperMESH™e3Obsolete1 (Unlimited)3Tin (Sn)AVALANCHE RATEDFET General Purpose Power650VMOSFET (Metal Oxide)13ASTP16N3R-PSFM-T31190W TcSingleENHANCEMENT MODE190W25 nsN-ChannelSWITCHING500m Ω @ 6.5A, 10V4.5V @ 100μA2750pF @ 25V13A Tc89nC @ 10V25ns10V±30V17 ns68 ns13ATO-220AB30V0.5Ohm650V52A350 mJNoROHS3 Compliant----------------
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Through HoleThrough HoleTO-220-3SILICON150°C TJTubeSuperMESH™e3Obsolete1 (Unlimited)3Matte Tin (Sn)-FET General Purpose Power600VMOSFET (Metal Oxide)14ASTP16N3-1190W TcSingleENHANCEMENT MODE190W30 nsN-ChannelSWITCHING420m Ω @ 7A, 10V4.5V @ 50μA2650pF @ 25V14A Tc86nC @ 10V25ns10V±30V15 ns70 ns14ATO-220AB30V-600V56A-NoROHS3 Compliant3yesEAR9938Ohm3.75V15.75mm10.4mm4.6mmNo SVHCLead Free-----
-
Through HoleThrough HoleTO-220-3SILICON-55°C~175°C TJTubeSAFeFET™e3Not For New Designs1 (Unlimited)3Matte Tin (Sn)-FET General Purpose Power-MOSFET (Metal Oxide)-STP1803R-PSFM-T31330W TcSingleENHANCEMENT MODE300W-N-ChannelSWITCHING4.2m Ω @ 40A, 10V4V @ 1mA4560pF @ 25V120A Tc110nC @ 10V250ns10V±20V115 ns-120ATO-220AB20V0.0042Ohm33V480A-NoROHS3 Compliant--EAR99-------NRND (Last Updated: 8 months ago)----
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Through HoleThrough HoleTO-220-3 Full PackSILICON-65°C~150°C TJTubeMDmesh™e3Active1 (Unlimited)3Matte Tin (Sn) - annealedAVALANCHE RATEDFET General Purpose Power500VMOSFET (Metal Oxide)12ASTP123-135W TcSingleENHANCEMENT MODE35W20 nsN-ChannelSWITCHING350m Ω @ 6A, 10V5V @ 50μA1000pF @ 25V12A Tc39nC @ 10V10ns10V±30V--12ATO-220AB30V-500V48A400 mJNoROHS3 Compliant3--350mOhm4V20mm10.4mm4.6mm-Lead FreeACTIVE (Last Updated: 8 months ago)16 Weeks1ISOLATED150°C
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