STP16NK65Z

STMicroelectronics STP16NK65Z

Part Number:
STP16NK65Z
Manufacturer:
STMicroelectronics
Ventron No:
3586345-STP16NK65Z
Description:
MOSFET N-CH 650V 13A TO-220
ECAD Model:
Datasheet:
STP16NK65Z(-S)

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Specifications
STMicroelectronics STP16NK65Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP16NK65Z.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    SuperMESH™
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    650V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    13A
  • Base Part Number
    STP16N
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Number of Elements
    1
  • Power Dissipation-Max
    190W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    190W
  • Turn On Delay Time
    25 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    500m Ω @ 6.5A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2750pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    13A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    89nC @ 10V
  • Rise Time
    25ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    17 ns
  • Turn-Off Delay Time
    68 ns
  • Continuous Drain Current (ID)
    13A
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    30V
  • Drain-source On Resistance-Max
    0.5Ohm
  • Drain to Source Breakdown Voltage
    650V
  • Pulsed Drain Current-Max (IDM)
    52A
  • Avalanche Energy Rating (Eas)
    350 mJ
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
STP16NK65Z Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 350 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2750pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 13A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 68 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 52A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 25 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.By using drive voltage (10V), this device helps reduce its overall power consumption.

STP16NK65Z Features
the avalanche energy rating (Eas) is 350 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 52A.


STP16NK65Z Applications
There are a lot of STMicroelectronics
STP16NK65Z applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
STP16NK65Z More Descriptions
Trans MOSFET N-CH 650V 13A 3-Pin(3 Tab) TO-220 Tube
Power MOSFET Transistors N Ch 650 V 0.38 Ohm 13A
Power Field-Effect Transistor, 13A I(D), 650V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
French Electronic Distributor since 1988
CAP CER 150PF 250V C0G/NP0 RAD
Product Comparison
The three parts on the right have similar specifications to STP16NK65Z.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Radiation Hardening
    RoHS Status
    Number of Pins
    Pbfree Code
    ECCN Code
    Resistance
    Threshold Voltage
    Height
    Length
    Width
    REACH SVHC
    Lead Free
    Lifecycle Status
    Factory Lead Time
    Number of Channels
    Case Connection
    Max Junction Temperature (Tj)
    View Compare
  • STP16NK65Z
    STP16NK65Z
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    -55°C~150°C TJ
    Tube
    SuperMESH™
    e3
    Obsolete
    1 (Unlimited)
    3
    Tin (Sn)
    AVALANCHE RATED
    FET General Purpose Power
    650V
    MOSFET (Metal Oxide)
    13A
    STP16N
    3
    R-PSFM-T3
    1
    190W Tc
    Single
    ENHANCEMENT MODE
    190W
    25 ns
    N-Channel
    SWITCHING
    500m Ω @ 6.5A, 10V
    4.5V @ 100μA
    2750pF @ 25V
    13A Tc
    89nC @ 10V
    25ns
    10V
    ±30V
    17 ns
    68 ns
    13A
    TO-220AB
    30V
    0.5Ohm
    650V
    52A
    350 mJ
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP16NK60Z
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    150°C TJ
    Tube
    SuperMESH™
    e3
    Obsolete
    1 (Unlimited)
    3
    Matte Tin (Sn)
    -
    FET General Purpose Power
    600V
    MOSFET (Metal Oxide)
    14A
    STP16N
    3
    -
    1
    190W Tc
    Single
    ENHANCEMENT MODE
    190W
    30 ns
    N-Channel
    SWITCHING
    420m Ω @ 7A, 10V
    4.5V @ 50μA
    2650pF @ 25V
    14A Tc
    86nC @ 10V
    25ns
    10V
    ±30V
    15 ns
    70 ns
    14A
    TO-220AB
    30V
    -
    600V
    56A
    -
    No
    ROHS3 Compliant
    3
    yes
    EAR99
    38Ohm
    3.75V
    15.75mm
    10.4mm
    4.6mm
    No SVHC
    Lead Free
    -
    -
    -
    -
    -
  • STP180NS04ZC
    Through Hole
    Through Hole
    TO-220-3
    SILICON
    -55°C~175°C TJ
    Tube
    SAFeFET™
    e3
    Not For New Designs
    1 (Unlimited)
    3
    Matte Tin (Sn)
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    STP180
    3
    R-PSFM-T3
    1
    330W Tc
    Single
    ENHANCEMENT MODE
    300W
    -
    N-Channel
    SWITCHING
    4.2m Ω @ 40A, 10V
    4V @ 1mA
    4560pF @ 25V
    120A Tc
    110nC @ 10V
    250ns
    10V
    ±20V
    115 ns
    -
    120A
    TO-220AB
    20V
    0.0042Ohm
    33V
    480A
    -
    No
    ROHS3 Compliant
    -
    -
    EAR99
    -
    -
    -
    -
    -
    -
    -
    NRND (Last Updated: 8 months ago)
    -
    -
    -
    -
  • STP12NM50FP
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    SILICON
    -65°C~150°C TJ
    Tube
    MDmesh™
    e3
    Active
    1 (Unlimited)
    3
    Matte Tin (Sn) - annealed
    AVALANCHE RATED
    FET General Purpose Power
    500V
    MOSFET (Metal Oxide)
    12A
    STP12
    3
    -
    1
    35W Tc
    Single
    ENHANCEMENT MODE
    35W
    20 ns
    N-Channel
    SWITCHING
    350m Ω @ 6A, 10V
    5V @ 50μA
    1000pF @ 25V
    12A Tc
    39nC @ 10V
    10ns
    10V
    ±30V
    -
    -
    12A
    TO-220AB
    30V
    -
    500V
    48A
    400 mJ
    No
    ROHS3 Compliant
    3
    -
    -
    350mOhm
    4V
    20mm
    10.4mm
    4.6mm
    -
    Lead Free
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    1
    ISOLATED
    150°C
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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