STMicroelectronics STP16NF25

Name: STP16NF25
Brand: STMicroelectronics
SKU: 3072170-STP16NF25
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP16NF25

Manufacturer:: STMicroelectronics

Ventron No:: 3072170-STP16NF25

Description:: MOSFET N-CH 250V 13A TO-220

ECAD Model:

Datasheet:: STP16NF25

Specifications

STMicroelectronics STP16NF25 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP16NF25.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
STripFET™ II
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
235MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STP16N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
100W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
90W
Case Connection
DRAIN
Turn On Delay Time
9 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
235m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
680pF @ 25V
Current - Continuous Drain (Id) @ 25°C
14A Tc
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Rise Time
17ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
17 ns
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
6.5A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
250V
Pulsed Drain Current-Max (IDM)
52A
Dual Supply Voltage
250V
Nominal Vgs
3 V
Height
15.75mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP16NF25 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 680pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 6.5A.With a drain-source breakdown voltage of 250V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 250V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 35 ns.Peak drain current for this device is 52A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.

STP16NF25 Features
a continuous drain current (ID) of 6.5A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 35 ns
based on its rated peak drain current 52A.

STP16NF25 Applications
There are a lot of STMicroelectronics
STP16NF25 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

STP16NF25 More Descriptions

N-channel 250 V, 0.195 Ohm, 14 A STripFET(TM) II Power MOSFET in TO-220 package
MOSFET Transistor, N Channel, 6.5 A, 250 V, 195 mohm, 10 V, 3 V
Trans MOSFET N-CH 250V 14A 3-Pin(3 Tab) TO-220 Tube
Power Field-Effect Transistor, 13A I(D), 250V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 250V, 13A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:250V; On Resistance Rds(on):195mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:90W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:13A; Package / Case:TO-220; Power Dissipation Pd:90W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:250V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to STP16NF25.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Voltage - Rated DC

Current Rating

Threshold Voltage

Lifecycle Status

Factory Lead Time

Additional Feature

Number of Channels

Avalanche Energy Rating (Eas)

Max Junction Temperature (Tj)

Configuration

Drain to Source Voltage (Vdss)

View Compare
STP16NF25

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

STripFET™ II

e3

yes

Obsolete

1 (Unlimited)

3

Through Hole

EAR99

235MOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STP16N

3

1

100W Tc

Single

ENHANCEMENT MODE

90W

DRAIN

9 ns

N-Channel

SWITCHING

235m Ω @ 6.5A, 10V

4V @ 250μA

680pF @ 25V

14A Tc

18nC @ 10V

17ns

10V

±20V

17 ns

35 ns

6.5A

TO-220AB

20V

250V

52A

250V

3 V

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
STP16NK60Z

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

SuperMESH™

e3

yes

Obsolete

1 (Unlimited)

3

-

EAR99

38Ohm

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STP16N

3

1

190W Tc

Single

ENHANCEMENT MODE

190W

-

30 ns

N-Channel

SWITCHING

420m Ω @ 7A, 10V

4.5V @ 50μA

2650pF @ 25V

14A Tc

86nC @ 10V

25ns

10V

±30V

15 ns

70 ns

14A

TO-220AB

30V

600V

56A

-

-

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

600V

14A

3.75V

-

-

-

-

-

-

-

-

STP16NF25 vs STP16NK60Z
STP12NM50FP

STMicroelectronics

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-65°C~150°C TJ

Tube

MDmesh™

e3

-

Active

1 (Unlimited)

3

-

-

350mOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

MOSFET (Metal Oxide)

STP12

3

1

35W Tc

Single

ENHANCEMENT MODE

35W

ISOLATED

20 ns

N-Channel

SWITCHING

350m Ω @ 6A, 10V

5V @ 50μA

1000pF @ 25V

12A Tc

39nC @ 10V

10ns

10V

±30V

-

-

12A

TO-220AB

30V

500V

48A

-

-

20mm

10.4mm

4.6mm

-

No

ROHS3 Compliant

Lead Free

500V

12A

4V

ACTIVE (Last Updated: 8 months ago)

16 Weeks

AVALANCHE RATED

1

400 mJ

150°C

-

-

STP16NF25 vs STP12NM50FP
STP16N60M2

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

-

150°C TJ

Tube

MDmesh™ M2

-

-

Active

1 (Unlimited)

-

-

EAR99

-

-

FET General Purpose Power

MOSFET (Metal Oxide)

STP16N

-

-

110W Tc

-

ENHANCEMENT MODE

-

-

-

N-Channel

-

320m Ω @ 6A, 10V

4V @ 250μA

700pF @ 100V

12A Tc

19nC @ 10V

-

10V

±25V

-

-

12A

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

ACTIVE (Last Updated: 8 months ago)

16 Weeks

-

-

-

-

Single

600V

STP16NF25 vs STP16N60M2