STMicroelectronics STP16N65M5

Name: STP16N65M5
Brand: STMicroelectronics
SKU: 2479483-STP16N65M5
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP16N65M5

Manufacturer:: STMicroelectronics

Ventron No:: 2479483-STP16N65M5

Description:: MOSFET N-CH 650V 12A TO-220

ECAD Model:

Datasheet:: STP16N65M5

Specifications

STMicroelectronics STP16N65M5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP16N65M5.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
17 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
MDmesh™ V
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
299mOhm
Terminal Finish
Matte Tin (Sn)
Additional Feature
ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STP16N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
90W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
90W
Turn On Delay Time
25 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
299m Ω @ 6A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1250pF @ 100V
Current - Continuous Drain (Id) @ 25°C
12A Tc
Gate Charge (Qg) (Max) @ Vgs
45nC @ 10V
Rise Time
9ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
7 ns
Turn-Off Delay Time
30 ns
Continuous Drain Current (ID)
12A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
650V
Pulsed Drain Current-Max (IDM)
48A
Avalanche Energy Rating (Eas)
200 mJ
Height
9.15mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP16N65M5 Description These STP16N65M5 devices are N-channel MDesh "V" power MOSFET, based on innovative Proprietary vertical process technology, combined with the famous horizontal layout structure of PowerMesh semiconductor. The resulting products have extremely low on-resistance, which is unparalleled in silicon-based power MOSFET, making it particularly suitable for applications that require higher power density and excellent efficiency.
STP16N65M5 Features
Worldwide best RDS(on) ■ Higher VDSS rating ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive ■ 100% avalanche tested
STP16N65M5 Applications
■ Switching applications

STP16N65M5 More Descriptions

N-channel 650 V, 0.230 Ohm, 12 A MDmesh(TM) V Power MOSFET in TO-220
Trans MOSFET N-CH Si 650V 12A 3-Pin(3 Tab) TO-220AB Tube
MOSFET, N CH, 650V, 12A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.23ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
Power Field-Effect Transistor, 12A I(D), 650V, 0.279ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP16N65M5.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Pbfree Code

Voltage - Rated DC

Current Rating

Configuration

Drain to Source Voltage (Vdss)

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Case Connection

View Compare
STP16N65M5

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

17 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ V

e3

Active

1 (Unlimited)

3

EAR99

299mOhm

Matte Tin (Sn)

ULTRA-LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

STP16N

3

1

90W Tc

Single

ENHANCEMENT MODE

90W

25 ns

N-Channel

SWITCHING

299m Ω @ 6A, 10V

5V @ 250μA

1250pF @ 100V

12A Tc

45nC @ 10V

9ns

10V

±25V

7 ns

30 ns

12A

4V

TO-220AB

25V

650V

48A

200 mJ

9.15mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
STP16NK60Z

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

SuperMESH™

e3

Obsolete

1 (Unlimited)

3

EAR99

38Ohm

Matte Tin (Sn)

-

FET General Purpose Power

MOSFET (Metal Oxide)

STP16N

3

1

190W Tc

Single

ENHANCEMENT MODE

190W

30 ns

N-Channel

SWITCHING

420m Ω @ 7A, 10V

4.5V @ 50μA

2650pF @ 25V

14A Tc

86nC @ 10V

25ns

10V

±30V

15 ns

70 ns

14A

3.75V

TO-220AB

30V

600V

56A

-

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

yes

600V

14A

-

-

-

-

-

-

-

-

STP16N65M5 vs STP16NK60Z
STP16N60M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

-

-

150°C TJ

Tube

MDmesh™ M2

-

Active

1 (Unlimited)

-

EAR99

-

-

-

FET General Purpose Power

MOSFET (Metal Oxide)

STP16N

-

-

110W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

-

320m Ω @ 6A, 10V

4V @ 250μA

700pF @ 100V

12A Tc

19nC @ 10V

-

10V

±25V

-

-

12A

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

Single

600V

-

-

-

-

-

-

STP16N65M5 vs STP16N60M2
STP150N3LLH6

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

-

SILICON

-55°C~175°C TJ

Tube

DeepGATE™, STripFET™ VI

e3

Obsolete

1 (Unlimited)

3

EAR99

3.3MOhm

Matte Tin (Sn)

-

FET General Purpose Power

MOSFET (Metal Oxide)

STP150

3

1

110W Tc

Single

ENHANCEMENT MODE

110W

-

N-Channel

SWITCHING

3.3m Ω @ 40A, 10V

2.5V @ 250μA

4040pF @ 25V

80A Tc

40nC @ 4.5V

18ns

4.5V 10V

±20V

46 ns

75 ns

80A

-

TO-220AB

20V

30V

320A

525 mJ

-

-

-

-

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSFM-T3

Not Qualified

DRAIN

STP16N65M5 vs STP150N3LLH6