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STP16N50M2

STMicroelectronics STP16N50M2

Part Number:
STP16N50M2
Manufacturer:
STMicroelectronics
Ventron No:
2849636-STP16N50M2
Description:
MOSFET N-CH 500V 13A TO-220AB
ECAD Model:
Datasheet:
STP16N50M2

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Specifications
STMicroelectronics STP16N50M2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP16N50M2.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    16 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    MDmesh™ M2
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STP16N
  • Power Dissipation-Max
    110W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    280m Ω @ 6.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    710pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    13A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    19.5nC @ 10V
  • Drain to Source Voltage (Vdss)
    500V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±25V
  • Continuous Drain Current (ID)
    13A
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STP16N50M2 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 710pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 13A continuous drain current (ID).For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

STP16N50M2 Features
a continuous drain current (ID) of 13A
a 500V drain to source voltage (Vdss)


STP16N50M2 Applications
There are a lot of STMicroelectronics
STP16N50M2 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
STP16N50M2 More Descriptions
N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a TO-220 package
STP16N50M2 Series 550 V 0.28 Ohm 13 A N-Channel MDmesh™ M2 Power Mosfet-TO-220AB
Mosfet, N-Ch, 500V, 13A, 150Deg C, 110W Rohs Compliant: Yes |Stmicroelectronics STP16N50M2
Trans MOSFET N-CH 500V 13A 3-Pin(3 Tab) TO-220AB Tube
Power Field-Effect Transistor, 13A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Product Comparison
The three parts on the right have similar specifications to STP16N50M2.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Technology
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    RoHS Status
    Lead Free
    Number of Pins
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Current Rating
    Pin Count
    Number of Elements
    Number of Channels
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    Transistor Application
    Rise Time
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    Radiation Hardening
    Fall Time (Typ)
    Turn-Off Delay Time
    REACH SVHC
    Reach Compliance Code
    JESD-30 Code
    Qualification Status
    View Compare
  • STP16N50M2
    STP16N50M2
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    -55°C~150°C TJ
    Tube
    MDmesh™ M2
    Active
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    STP16N
    110W Tc
    N-Channel
    280m Ω @ 6.5A, 10V
    4V @ 250μA
    710pF @ 100V
    13A Tc
    19.5nC @ 10V
    500V
    10V
    ±25V
    13A
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP12NM50FP
    STP12NM50FP
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    -65°C~150°C TJ
    Tube
    MDmesh™
    Active
    1 (Unlimited)
    -
    MOSFET (Metal Oxide)
    -
    -
    STP12
    35W Tc
    N-Channel
    350m Ω @ 6A, 10V
    5V @ 50μA
    1000pF @ 25V
    12A Tc
    39nC @ 10V
    -
    10V
    ±30V
    12A
    ROHS3 Compliant
    Lead Free
    3
    SILICON
    e3
    3
    350mOhm
    Matte Tin (Sn) - annealed
    AVALANCHE RATED
    FET General Purpose Power
    500V
    12A
    3
    1
    1
    Single
    ENHANCEMENT MODE
    35W
    ISOLATED
    20 ns
    SWITCHING
    10ns
    4V
    TO-220AB
    30V
    500V
    48A
    400 mJ
    150°C
    20mm
    10.4mm
    4.6mm
    No
    -
    -
    -
    -
    -
    -
    STP16N50M2 vs STP12NM50FP
  • STP18NM60N
    STP18NM60N
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    -55°C~150°C TJ
    Tube
    MDmesh™ II
    Active
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    -
    -
    STP18N
    110W Tc
    N-Channel
    285m Ω @ 6.5A, 10V
    4V @ 250μA
    1000pF @ 50V
    13A Tc
    35nC @ 10V
    -
    10V
    ±25V
    13A
    ROHS3 Compliant
    Lead Free
    3
    SILICON
    -
    3
    285mOhm
    -
    -
    FET General Purpose Power
    -
    -
    3
    1
    -
    Single
    ENHANCEMENT MODE
    110W
    -
    12 ns
    SWITCHING
    15ns
    3V
    TO-220AB
    25V
    600V
    52A
    -
    -
    15.75mm
    10.4mm
    4.6mm
    No
    25 ns
    55 ns
    No SVHC
    -
    -
    -
    STP16N50M2 vs STP18NM60N
  • STP150N3LLH6
    STP150N3LLH6
    STMicroelectronics
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    -55°C~175°C TJ
    Tube
    DeepGATE™, STripFET™ VI
    Obsolete
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    STP150
    110W Tc
    N-Channel
    3.3m Ω @ 40A, 10V
    2.5V @ 250μA
    4040pF @ 25V
    80A Tc
    40nC @ 4.5V
    -
    4.5V 10V
    ±20V
    80A
    ROHS3 Compliant
    Lead Free
    -
    SILICON
    e3
    3
    3.3MOhm
    Matte Tin (Sn)
    -
    FET General Purpose Power
    -
    -
    3
    1
    -
    Single
    ENHANCEMENT MODE
    110W
    DRAIN
    -
    SWITCHING
    18ns
    -
    TO-220AB
    20V
    30V
    320A
    525 mJ
    -
    -
    -
    -
    -
    46 ns
    75 ns
    -
    not_compliant
    R-PSFM-T3
    Not Qualified
    STP16N50M2 vs STP150N3LLH6
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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