STMicroelectronics STP165N10F4
- Part Number:
- STP165N10F4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2848854-STP165N10F4
- Description:
- MOSFET N-CH 100V 120A TO-220
- ECAD Model:
-
- Datasheet:
- STP165N10F4
STMicroelectronics STP165N10F4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP165N10F4.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesDeepGATE™, STripFET™
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance5.5MOhm
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberSTP165
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- Power Dissipation-Max315W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation315W
- Turn On Delay Time29.6 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5.5m Ω @ 60A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds10500pF @ 25V
- Current - Continuous Drain (Id) @ 25°C120A Tc
- Gate Charge (Qg) (Max) @ Vgs180nC @ 10V
- Rise Time62ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)106 ns
- Turn-Off Delay Time154 ns
- Continuous Drain Current (ID)120A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Pulsed Drain Current-Max (IDM)480A
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP165N10F4 Description
This STP165N10F4 is an N-channel enhancement mode power MOSFET with STripFETTM DeepGATETM technology. It is designed in such a way that the on-resistance is minimized.
STP165N10F4 Features N-channel enhancement mode
100% avalanche rated
Low gate charge
Very low on-resistance
STP165N10F4 Applications Pre-amplifiers
Oscillator circuits
Low current switches
H-bridge circuits for low-power motors
Audio frequency amplifier circuits
STP165N10F4 Features N-channel enhancement mode
100% avalanche rated
Low gate charge
Very low on-resistance
STP165N10F4 Applications Pre-amplifiers
Oscillator circuits
Low current switches
H-bridge circuits for low-power motors
Audio frequency amplifier circuits
STP165N10F4 More Descriptions
N-channel 100 V, 4.1 mΩ, 160 A TO-220, H²PAK STripFET͐2;2; DeepGATE͐2;2; Power MOSFET
Trans MOSFET N-CH 100V 120A 3-Pin(3 Tab) TO-220AB Tube
Power Field-Effect Transistor, 120A I(D), 100V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Trans MOSFET N-CH 100V 120A 3-Pin(3 Tab) TO-220AB Tube
Power Field-Effect Transistor, 120A I(D), 100V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to STP165N10F4.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyBase Part NumberPin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Radiation HardeningRoHS StatusLead FreeNumber of PinsJESD-609 CodePbfree CodeTerminal FinishVoltage - Rated DCCurrent RatingThreshold VoltageHeightLengthWidthREACH SVHCPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Qualification StatusDrain-source On Resistance-MaxAvalanche Energy Rating (Eas)View Compare
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STP165N10F4ACTIVE (Last Updated: 7 months ago)20 WeeksThrough HoleThrough HoleTO-220-3SILICON-55°C~150°C TJTubeDeepGATE™, STripFET™Active1 (Unlimited)3EAR995.5MOhmFET General Purpose PowerMOSFET (Metal Oxide)STP1653R-PSFM-T31315W TcSingleENHANCEMENT MODE315W29.6 nsN-ChannelSWITCHING5.5m Ω @ 60A, 10V4V @ 250μA10500pF @ 25V120A Tc180nC @ 10V62ns10V±20V106 ns154 ns120ATO-220AB20V100V480ANoROHS3 CompliantLead Free------------------ -
--Through HoleThrough HoleTO-220-3SILICON150°C TJTubeSuperMESH™Obsolete1 (Unlimited)3EAR9938OhmFET General Purpose PowerMOSFET (Metal Oxide)STP16N3-1190W TcSingleENHANCEMENT MODE190W30 nsN-ChannelSWITCHING420m Ω @ 7A, 10V4.5V @ 50μA2650pF @ 25V14A Tc86nC @ 10V25ns10V±30V15 ns70 ns14ATO-220AB30V600V56ANoROHS3 CompliantLead Free3e3yesMatte Tin (Sn)600V14A3.75V15.75mm10.4mm4.6mmNo SVHC------
-
--Through HoleThrough HoleTO-220-3SILICON-65°C~150°C TJTubeMESH OVERLAY™Obsolete1 (Unlimited)3EAR99-FET General Purpose PowerMOSFET (Metal Oxide)STP16N3-1140W TcSingleENHANCEMENT MODE140W-N-ChannelSWITCHING280m Ω @ 8A, 10V4V @ 250μA1270pF @ 25V16A Tc83nC @ 10V26ns10V±20V32 ns-16ATO-220AB20V250V64A-ROHS3 Compliant-3e3-Matte Tin (Sn)250V16A-----NOT SPECIFIEDnot_compliantNOT SPECIFIEDNot Qualified0.28Ohm600 mJ
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ACTIVE (Last Updated: 8 months ago)16 WeeksThrough HoleThrough HoleTO-220-3SILICON-55°C~150°C TJTubeMDmesh™ IIActive1 (Unlimited)3EAR99285mOhmFET General Purpose PowerMOSFET (Metal Oxide)STP18N3-1110W TcSingleENHANCEMENT MODE110W12 nsN-ChannelSWITCHING285m Ω @ 6.5A, 10V4V @ 250μA1000pF @ 50V13A Tc35nC @ 10V15ns10V±25V25 ns55 ns13ATO-220AB25V600V52ANoROHS3 CompliantLead Free3-----3V15.75mm10.4mm4.6mmNo SVHC------
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