STMicroelectronics STP160N75F3

Name: STP160N75F3
Brand: STMicroelectronics
SKU: 2481071-STP160N75F3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP160N75F3

Manufacturer:: STMicroelectronics

Ventron No:: 2481071-STP160N75F3

Description:: MOSFET N-CH 75V 120A TO-220

ECAD Model:

Datasheet:: STP160N75F3

Specifications

STMicroelectronics STP160N75F3 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP160N75F3.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
4MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STP160
Pin Count
3
Number of Elements
1
Power Dissipation-Max
330W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
330W
Turn On Delay Time
22 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4m Ω @ 60A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6750pF @ 25V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
85nC @ 10V
Rise Time
65ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
100 ns
Continuous Drain Current (ID)
120A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
75V
Pulsed Drain Current-Max (IDM)
480A
Height
15.75mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP160N75F3 Description
STP160N75F3, this N-channel enhancement mode Power MOSFET is the latest refinement of ST's STripFET? process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge.

STP160N75F3 Features
Ultra low on-resistance
100% Avalanche tested
ROHS3 Compliant
No SVHC
Lead Free

STP160N75F3 Applications
Switching applications
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid

STP160N75F3 More Descriptions

N-channel 75 V, 3.5 mOhm typ., 120 A STripFET(TM) Power MOSFET in TO-220 package
Transistor MOSFET N-CH 75V 120A 3-Pin (3 Tab) TO-220 Tube
Power Field-Effect Transistor, 120A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 75V, 120A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:75V; On Resistance Rds(on):3.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:120A; Package / Case:TO-220; Power Dissipation Pd:330W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to STP160N75F3.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Voltage - Rated DC

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

Max Operating Temperature

Min Operating Temperature

Additional Feature

JESD-30 Code

View Compare
STP160N75F3

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

12 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

STripFET™

e3

Active

1 (Unlimited)

3

EAR99

4MOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STP160

3

1

330W Tc

Single

ENHANCEMENT MODE

330W

22 ns

N-Channel

SWITCHING

4m Ω @ 60A, 10V

4V @ 250μA

6750pF @ 25V

120A Tc

85nC @ 10V

65ns

10V

±20V

15 ns

100 ns

120A

4V

TO-220AB

20V

75V

480A

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-
STP16NS25

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

3

SILICON

-65°C~150°C TJ

Tube

MESH OVERLAY™

e3

Obsolete

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STP16N

3

1

140W Tc

Single

ENHANCEMENT MODE

140W

-

N-Channel

SWITCHING

280m Ω @ 8A, 10V

4V @ 250μA

1270pF @ 25V

16A Tc

83nC @ 10V

26ns

10V

±20V

32 ns

-

16A

-

TO-220AB

20V

250V

64A

-

-

-

-

-

ROHS3 Compliant

-

250V

NOT SPECIFIED

not_compliant

16A

NOT SPECIFIED

Not Qualified

0.28Ohm

600 mJ

-

-

-

-

STP160N75F3 vs STP16NS25
STP11NM60FD

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

3

-

-

Tube

FDmesh™

e3

Active

1 (Unlimited)

3

EAR99

450mOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STP11N

3

1

160W Tc

Single

ENHANCEMENT MODE

160W

20 ns

N-Channel

SWITCHING

450m Ω @ 5.5A, 10V

5V @ 250μA

900pF @ 25V

11A Tc

40nC @ 10V

16ns

10V

±30V

15 ns

-

11A

-

TO-220AB

30V

600V

44A

15.75mm

10.4mm

4.6mm

-

No

ROHS3 Compliant

Lead Free

600V

-

-

11A

-

-

-

-

150°C

-65°C

AVALANCHE RATED

-

STP160N75F3 vs STP11NM60FD
STP180NS04ZC

STMicroelectronics

NRND (Last Updated: 8 months ago)

-

Through Hole

Through Hole

TO-220-3

-

SILICON

-55°C~175°C TJ

Tube

SAFeFET™

e3

Not For New Designs

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

STP180

3

1

330W Tc

Single

ENHANCEMENT MODE

300W

-

N-Channel

SWITCHING

4.2m Ω @ 40A, 10V

4V @ 1mA

4560pF @ 25V

120A Tc

110nC @ 10V

250ns

10V

±20V

115 ns

-

120A

-

TO-220AB

20V

33V

480A

-

-

-

-

No

ROHS3 Compliant

-

-

-

-

-

-

-

0.0042Ohm

-

-

-

-

R-PSFM-T3

STP160N75F3 vs STP180NS04ZC