STP15NM60ND

STMicroelectronics STP15NM60ND

Part Number:
STP15NM60ND
Manufacturer:
STMicroelectronics
Ventron No:
2484819-STP15NM60ND
Description:
MOSFET N-CH 600V 14A TO-220
ECAD Model:
Datasheet:
STP15NM60ND

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Specifications
STMicroelectronics STP15NM60ND technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP15NM60ND.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    FDmesh™ II
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    299mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Base Part Number
    STP15N
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    125W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    125W
  • Turn On Delay Time
    17 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    299m Ω @ 7A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1250pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    14A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    40nC @ 10V
  • Rise Time
    20ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±25V
  • Fall Time (Typ)
    28 ns
  • Turn-Off Delay Time
    47 ns
  • Continuous Drain Current (ID)
    14A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    25V
  • Drain to Source Breakdown Voltage
    600V
  • Pulsed Drain Current-Max (IDM)
    56A
  • Height
    15.75mm
  • Length
    10.4mm
  • Width
    4.6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STP15NM60ND Overview
The maximum input capacitance of this device is 1250pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 14A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 47 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 56A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.

STP15NM60ND Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 47 ns
based on its rated peak drain current 56A.
a threshold voltage of 4V


STP15NM60ND Applications
There are a lot of STMicroelectronics
STP15NM60ND applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
STP15NM60ND More Descriptions
N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in TO-220 package
N-Channel 600 V 0.299 Ohm Falnge Mount FDmesh™ II MosFet - TO-220
Trans MOSFET N-CH 600V 14A 3-Pin(3 Tab) TO-220AB Tube
Power Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 14A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.27ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 125W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
Product Comparison
The three parts on the right have similar specifications to STP15NM60ND.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Lifecycle Status
    Factory Lead Time
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Voltage - Rated DC
    Current Rating
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Case Connection
    Avalanche Energy Rating (Eas)
    View Compare
  • STP15NM60ND
    STP15NM60ND
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    FDmesh™ II
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    299mOhm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP15N
    3
    1
    125W Tc
    Single
    ENHANCEMENT MODE
    125W
    17 ns
    N-Channel
    SWITCHING
    299m Ω @ 7A, 10V
    5V @ 250μA
    1250pF @ 50V
    14A Tc
    40nC @ 10V
    20ns
    10V
    ±25V
    28 ns
    47 ns
    14A
    4V
    TO-220AB
    25V
    600V
    56A
    15.75mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP11NM60FD
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -
    Tube
    FDmesh™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    450mOhm
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP11N
    3
    1
    160W Tc
    Single
    ENHANCEMENT MODE
    160W
    20 ns
    N-Channel
    SWITCHING
    450m Ω @ 5.5A, 10V
    5V @ 250μA
    900pF @ 25V
    11A Tc
    40nC @ 10V
    16ns
    10V
    ±30V
    15 ns
    -
    11A
    -
    TO-220AB
    30V
    600V
    44A
    15.75mm
    10.4mm
    4.6mm
    -
    No
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    150°C
    -65°C
    AVALANCHE RATED
    600V
    11A
    -
    -
    -
    -
    -
    -
    -
  • STP18NM60N
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    MDmesh™ II
    -
    Active
    1 (Unlimited)
    3
    EAR99
    285mOhm
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP18N
    3
    1
    110W Tc
    Single
    ENHANCEMENT MODE
    110W
    12 ns
    N-Channel
    SWITCHING
    285m Ω @ 6.5A, 10V
    4V @ 250μA
    1000pF @ 50V
    13A Tc
    35nC @ 10V
    15ns
    10V
    ±25V
    25 ns
    55 ns
    13A
    3V
    TO-220AB
    25V
    600V
    52A
    15.75mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP150N3LLH6
    Through Hole
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~175°C TJ
    Tube
    DeepGATE™, STripFET™ VI
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    3.3MOhm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP150
    3
    1
    110W Tc
    Single
    ENHANCEMENT MODE
    110W
    -
    N-Channel
    SWITCHING
    3.3m Ω @ 40A, 10V
    2.5V @ 250μA
    4040pF @ 25V
    80A Tc
    40nC @ 4.5V
    18ns
    4.5V 10V
    ±20V
    46 ns
    75 ns
    80A
    -
    TO-220AB
    20V
    30V
    320A
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    DRAIN
    525 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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