STMicroelectronics STP15NM60ND
- Part Number:
- STP15NM60ND
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2484819-STP15NM60ND
- Description:
- MOSFET N-CH 600V 14A TO-220
- Datasheet:
- STP15NM60ND
STMicroelectronics STP15NM60ND technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP15NM60ND.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesFDmesh™ II
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance299mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberSTP15N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max125W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation125W
- Turn On Delay Time17 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs299m Ω @ 7A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1250pF @ 50V
- Current - Continuous Drain (Id) @ 25°C14A Tc
- Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
- Rise Time20ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
- Fall Time (Typ)28 ns
- Turn-Off Delay Time47 ns
- Continuous Drain Current (ID)14A
- Threshold Voltage4V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)25V
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)56A
- Height15.75mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP15NM60ND Overview
The maximum input capacitance of this device is 1250pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 14A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 47 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 56A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
STP15NM60ND Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 47 ns
based on its rated peak drain current 56A.
a threshold voltage of 4V
STP15NM60ND Applications
There are a lot of STMicroelectronics
STP15NM60ND applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 1250pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 14A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 47 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 56A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 17 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
STP15NM60ND Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 47 ns
based on its rated peak drain current 56A.
a threshold voltage of 4V
STP15NM60ND Applications
There are a lot of STMicroelectronics
STP15NM60ND applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
STP15NM60ND More Descriptions
N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in TO-220 package
N-Channel 600 V 0.299 Ohm Falnge Mount FDmesh II MosFet - TO-220
Trans MOSFET N-CH 600V 14A 3-Pin(3 Tab) TO-220AB Tube
Power Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 14A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.27ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 125W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
N-Channel 600 V 0.299 Ohm Falnge Mount FDmesh II MosFet - TO-220
Trans MOSFET N-CH 600V 14A 3-Pin(3 Tab) TO-220AB Tube
Power Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 14A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.27ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 125W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
The three parts on the right have similar specifications to STP15NM60ND.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeLifecycle StatusFactory Lead TimeMax Operating TemperatureMin Operating TemperatureAdditional FeatureVoltage - Rated DCCurrent RatingPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusCase ConnectionAvalanche Energy Rating (Eas)View Compare
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STP15NM60NDThrough HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTubeFDmesh™ IIe3Obsolete1 (Unlimited)3EAR99299mOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP15N31125W TcSingleENHANCEMENT MODE125W17 nsN-ChannelSWITCHING299m Ω @ 7A, 10V5V @ 250μA1250pF @ 50V14A Tc40nC @ 10V20ns10V±25V28 ns47 ns14A4VTO-220AB25V600V56A15.75mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free---------------
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Through HoleThrough HoleTO-220-33--TubeFDmesh™e3Active1 (Unlimited)3EAR99450mOhmTin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP11N31160W TcSingleENHANCEMENT MODE160W20 nsN-ChannelSWITCHING450m Ω @ 5.5A, 10V5V @ 250μA900pF @ 25V11A Tc40nC @ 10V16ns10V±30V15 ns-11A-TO-220AB30V600V44A15.75mm10.4mm4.6mm-NoROHS3 CompliantLead FreeACTIVE (Last Updated: 8 months ago)16 Weeks150°C-65°CAVALANCHE RATED600V11A-------
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Through HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTubeMDmesh™ II-Active1 (Unlimited)3EAR99285mOhm-FET General Purpose PowerMOSFET (Metal Oxide)STP18N31110W TcSingleENHANCEMENT MODE110W12 nsN-ChannelSWITCHING285m Ω @ 6.5A, 10V4V @ 250μA1000pF @ 50V13A Tc35nC @ 10V15ns10V±25V25 ns55 ns13A3VTO-220AB25V600V52A15.75mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead FreeACTIVE (Last Updated: 8 months ago)16 Weeks------------
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Through HoleThrough HoleTO-220-3-SILICON-55°C~175°C TJTubeDeepGATE™, STripFET™ VIe3Obsolete1 (Unlimited)3EAR993.3MOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP15031110W TcSingleENHANCEMENT MODE110W-N-ChannelSWITCHING3.3m Ω @ 40A, 10V2.5V @ 250μA4040pF @ 25V80A Tc40nC @ 4.5V18ns4.5V 10V±20V46 ns75 ns80A-TO-220AB20V30V320A-----ROHS3 CompliantLead Free-------NOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSFM-T3Not QualifiedDRAIN525 mJ
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