STP15NK50ZFP

STMicroelectronics STP15NK50ZFP

Part Number:
STP15NK50ZFP
Manufacturer:
STMicroelectronics
Ventron No:
2479439-STP15NK50ZFP
Description:
MOSFET N-CH 500V 14A TO-220FP
ECAD Model:
Datasheet:
STP15NK50ZFP

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Specifications
STMicroelectronics STP15NK50ZFP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP15NK50ZFP.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Weight
    9.071847g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -50°C~150°C TJ
  • Packaging
    Tube
  • Series
    SuperMESH™
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Additional Feature
    HIGH VOLTAGE
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    500V
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Current Rating
    14A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STP15N
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    40W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    40W
  • Case Connection
    ISOLATED
  • Turn On Delay Time
    20 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    340m Ω @ 7A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2260pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    14A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    106nC @ 10V
  • Rise Time
    23ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    15 ns
  • Turn-Off Delay Time
    62 ns
  • Continuous Drain Current (ID)
    14A
  • Threshold Voltage
    3.75V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    500V
  • Pulsed Drain Current-Max (IDM)
    56A
  • Height
    9.3mm
  • Length
    10.4mm
  • Width
    4.6mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STP15NK50ZFP Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2260pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 14A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 56A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 20 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3.75V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.

STP15NK50ZFP Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 56A.
a threshold voltage of 3.75V


STP15NK50ZFP Applications
There are a lot of STMicroelectronics
STP15NK50ZFP applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
STP15NK50ZFP More Descriptions
Mosfet Transistor, N Channel, 14 A, 500 V, 340 Mohm, 10 V, 3.75 V Rohs Compliant: Yes
N-Channel 500 V 340 mOhm Flange Mount SuperMESH Power Mosfet - TO-220FP
N-Channel 500V - 0.30 Ohm - 14A Zener-Protected SuperMESH(TM) POWER MOSFET
Trans MOSFET N-CH 500V 14A 3-Pin(3 Tab) TO-220FP Tube
MOSFET 500V 0.30 OHM 14A, TO 220 ISO FULL PACK IN LINEMOSFET Operating temperature: -55...150 °C Housing type: TO-220FP Polarity: N Power dissipation: 40 W
MOSFET N-Ch 500V 14A SuperMESH TO220FP
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.34ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio
Power Field-Effect Transistor, 14A I(D), 500V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Product Comparison
The three parts on the right have similar specifications to STP15NK50ZFP.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    JESD-30 Code
    Drain-source On Resistance-Max
    Radiation Hardening
    Resistance
    Avalanche Energy Rating (Eas)
    View Compare
  • STP15NK50ZFP
    STP15NK50ZFP
    ACTIVE (Last Updated: 7 months ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    9.071847g
    SILICON
    -50°C~150°C TJ
    Tube
    SuperMESH™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn) - annealed
    HIGH VOLTAGE
    FET General Purpose Power
    500V
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    not_compliant
    14A
    NOT SPECIFIED
    STP15N
    3
    Not Qualified
    1
    40W Tc
    Single
    ENHANCEMENT MODE
    40W
    ISOLATED
    20 ns
    N-Channel
    SWITCHING
    340m Ω @ 7A, 10V
    4.5V @ 100μA
    2260pF @ 25V
    14A Tc
    106nC @ 10V
    23ns
    10V
    ±30V
    15 ns
    62 ns
    14A
    3.75V
    TO-220AB
    30V
    500V
    56A
    9.3mm
    10.4mm
    4.6mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • STP180NS04ZC
    NRND (Last Updated: 8 months ago)
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    -
    SILICON
    -55°C~175°C TJ
    Tube
    SAFeFET™
    e3
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    STP180
    3
    -
    1
    330W Tc
    Single
    ENHANCEMENT MODE
    300W
    -
    -
    N-Channel
    SWITCHING
    4.2m Ω @ 40A, 10V
    4V @ 1mA
    4560pF @ 25V
    120A Tc
    110nC @ 10V
    250ns
    10V
    ±20V
    115 ns
    -
    120A
    -
    TO-220AB
    20V
    33V
    480A
    -
    -
    -
    -
    ROHS3 Compliant
    -
    R-PSFM-T3
    0.0042Ohm
    No
    -
    -
  • STP18NM60N
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    MDmesh™ II
    -
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    STP18N
    3
    -
    1
    110W Tc
    Single
    ENHANCEMENT MODE
    110W
    -
    12 ns
    N-Channel
    SWITCHING
    285m Ω @ 6.5A, 10V
    4V @ 250μA
    1000pF @ 50V
    13A Tc
    35nC @ 10V
    15ns
    10V
    ±25V
    25 ns
    55 ns
    13A
    3V
    TO-220AB
    25V
    600V
    52A
    15.75mm
    10.4mm
    4.6mm
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    No
    285mOhm
    -
  • STP150N3LLH6
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    -
    SILICON
    -55°C~175°C TJ
    Tube
    DeepGATE™, STripFET™ VI
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    not_compliant
    -
    NOT SPECIFIED
    STP150
    3
    Not Qualified
    1
    110W Tc
    Single
    ENHANCEMENT MODE
    110W
    DRAIN
    -
    N-Channel
    SWITCHING
    3.3m Ω @ 40A, 10V
    2.5V @ 250μA
    4040pF @ 25V
    80A Tc
    40nC @ 4.5V
    18ns
    4.5V 10V
    ±20V
    46 ns
    75 ns
    80A
    -
    TO-220AB
    20V
    30V
    320A
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    R-PSFM-T3
    -
    -
    3.3MOhm
    525 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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