STMicroelectronics STP15NK50ZFP
- Part Number:
- STP15NK50ZFP
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2479439-STP15NK50ZFP
- Description:
- MOSFET N-CH 500V 14A TO-220FP
- Datasheet:
- STP15NK50ZFP
STMicroelectronics STP15NK50ZFP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP15NK50ZFP.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Weight9.071847g
- Transistor Element MaterialSILICON
- Operating Temperature-50°C~150°C TJ
- PackagingTube
- SeriesSuperMESH™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- Additional FeatureHIGH VOLTAGE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC500V
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Current Rating14A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTP15N
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max40W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation40W
- Case ConnectionISOLATED
- Turn On Delay Time20 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs340m Ω @ 7A, 10V
- Vgs(th) (Max) @ Id4.5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds2260pF @ 25V
- Current - Continuous Drain (Id) @ 25°C14A Tc
- Gate Charge (Qg) (Max) @ Vgs106nC @ 10V
- Rise Time23ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time62 ns
- Continuous Drain Current (ID)14A
- Threshold Voltage3.75V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage500V
- Pulsed Drain Current-Max (IDM)56A
- Height9.3mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP15NK50ZFP Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2260pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 14A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 56A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 20 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3.75V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
STP15NK50ZFP Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 56A.
a threshold voltage of 3.75V
STP15NK50ZFP Applications
There are a lot of STMicroelectronics
STP15NK50ZFP applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2260pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 14A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 56A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 20 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3.75V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
STP15NK50ZFP Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 56A.
a threshold voltage of 3.75V
STP15NK50ZFP Applications
There are a lot of STMicroelectronics
STP15NK50ZFP applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
STP15NK50ZFP More Descriptions
Mosfet Transistor, N Channel, 14 A, 500 V, 340 Mohm, 10 V, 3.75 V Rohs Compliant: Yes
N-Channel 500 V 340 mOhm Flange Mount SuperMESH Power Mosfet - TO-220FP
N-Channel 500V - 0.30 Ohm - 14A Zener-Protected SuperMESH(TM) POWER MOSFET
Trans MOSFET N-CH 500V 14A 3-Pin(3 Tab) TO-220FP Tube
MOSFET 500V 0.30 OHM 14A, TO 220 ISO FULL PACK IN LINEMOSFET Operating temperature: -55...150 °C Housing type: TO-220FP Polarity: N Power dissipation: 40 W
MOSFET N-Ch 500V 14A SuperMESH TO220FP
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.34ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio
Power Field-Effect Transistor, 14A I(D), 500V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-Channel 500 V 340 mOhm Flange Mount SuperMESH Power Mosfet - TO-220FP
N-Channel 500V - 0.30 Ohm - 14A Zener-Protected SuperMESH(TM) POWER MOSFET
Trans MOSFET N-CH 500V 14A 3-Pin(3 Tab) TO-220FP Tube
MOSFET 500V 0.30 OHM 14A, TO 220 ISO FULL PACK IN LINE
MOSFET N-Ch 500V 14A SuperMESH TO220FP
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.34ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio
Power Field-Effect Transistor, 14A I(D), 500V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to STP15NK50ZFP.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthREACH SVHCRoHS StatusLead FreeJESD-30 CodeDrain-source On Resistance-MaxRadiation HardeningResistanceAvalanche Energy Rating (Eas)View Compare
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STP15NK50ZFPACTIVE (Last Updated: 7 months ago)12 WeeksThrough HoleThrough HoleTO-220-3 Full Pack39.071847gSILICON-50°C~150°C TJTubeSuperMESH™e3Active1 (Unlimited)3EAR99Matte Tin (Sn) - annealedHIGH VOLTAGEFET General Purpose Power500VMOSFET (Metal Oxide)NOT SPECIFIEDnot_compliant14ANOT SPECIFIEDSTP15N3Not Qualified140W TcSingleENHANCEMENT MODE40WISOLATED20 nsN-ChannelSWITCHING340m Ω @ 7A, 10V4.5V @ 100μA2260pF @ 25V14A Tc106nC @ 10V23ns10V±30V15 ns62 ns14A3.75VTO-220AB30V500V56A9.3mm10.4mm4.6mmNo SVHCROHS3 CompliantLead Free------
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NRND (Last Updated: 8 months ago)-Through HoleThrough HoleTO-220-3--SILICON-55°C~175°C TJTubeSAFeFET™e3Not For New Designs1 (Unlimited)3EAR99Matte Tin (Sn)-FET General Purpose Power-MOSFET (Metal Oxide)----STP1803-1330W TcSingleENHANCEMENT MODE300W--N-ChannelSWITCHING4.2m Ω @ 40A, 10V4V @ 1mA4560pF @ 25V120A Tc110nC @ 10V250ns10V±20V115 ns-120A-TO-220AB20V33V480A----ROHS3 Compliant-R-PSFM-T30.0042OhmNo--
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ACTIVE (Last Updated: 8 months ago)16 WeeksThrough HoleThrough HoleTO-220-33-SILICON-55°C~150°C TJTubeMDmesh™ II-Active1 (Unlimited)3EAR99--FET General Purpose Power-MOSFET (Metal Oxide)----STP18N3-1110W TcSingleENHANCEMENT MODE110W-12 nsN-ChannelSWITCHING285m Ω @ 6.5A, 10V4V @ 250μA1000pF @ 50V13A Tc35nC @ 10V15ns10V±25V25 ns55 ns13A3VTO-220AB25V600V52A15.75mm10.4mm4.6mmNo SVHCROHS3 CompliantLead Free--No285mOhm-
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--Through HoleThrough HoleTO-220-3--SILICON-55°C~175°C TJTubeDeepGATE™, STripFET™ VIe3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)-FET General Purpose Power-MOSFET (Metal Oxide)NOT SPECIFIEDnot_compliant-NOT SPECIFIEDSTP1503Not Qualified1110W TcSingleENHANCEMENT MODE110WDRAIN-N-ChannelSWITCHING3.3m Ω @ 40A, 10V2.5V @ 250μA4040pF @ 25V80A Tc40nC @ 4.5V18ns4.5V 10V±20V46 ns75 ns80A-TO-220AB20V30V320A----ROHS3 CompliantLead FreeR-PSFM-T3--3.3MOhm525 mJ
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