STMicroelectronics STP14NF10

Name: STP14NF10
Brand: STMicroelectronics
SKU: 2480297-STP14NF10
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP14NF10

Manufacturer:: STMicroelectronics

Ventron No:: 2480297-STP14NF10

Description:: MOSFET N-CH 100V 15A TO-220

ECAD Model:

Datasheet:: STP14NF10

Specifications

STMicroelectronics STP14NF10 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP14NF10.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
130mOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
15A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP14N
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
60W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
60W
Case Connection
DRAIN
Turn On Delay Time
16 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
130m Ω @ 7A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
460pF @ 25V
Current - Continuous Drain (Id) @ 25°C
15A Tc
Gate Charge (Qg) (Max) @ Vgs
21nC @ 10V
Rise Time
25ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
8 ns
Turn-Off Delay Time
32 ns
Continuous Drain Current (ID)
15A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
60A
Avalanche Energy Rating (Eas)
70 mJ
Height
9.15mm
Length
10.4mm
Width
4.6mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP14NF10 Description
STP14NF10 is a 100V N-channel STripFET II Power MOSFET in a TO-220 package. This MOSFET series realized with STMicroelectronics's unique STripFETTM process has specifically been designed to minimize input capacitance and gate charge. The STMicroelectronics STP14NF10 is therefore suitable as a primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for telecom and computer applications. The STP14NF10 is also intended for any applications with low gate drive requirements.

STP14NF10 Features
Exceptional dv/dt capability
100% avalanche tested
Application-oriented characterization
In the TO-220 package
Drain-source voltage (VGS = 0): 100V

STP14NF10 Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch

STP14NF10 More Descriptions

N-channel 100 V, 0.115 Ohm, 15 A STripFET II Power MOSFET in a TO-220 package
In a Pack of 5, N-Channel MOSFET, 15 A, 100 V, 3-Pin TO-220 STMicroelectronics STP14NF10
N-Channel 100 V 0.13 O Flange Mount STripFET II Power MosFet - TO-220
Trans MOSFET N-CH 100V 15A 3-Pin(3 Tab) TO-220AB Tube
Power Field-Effect Transistor, 15A I(D), 100V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET N CH 100V 15A TO-220; Transistor Polarity:N Channel; On State Resistance:115mohm; Operating Temperature Range:-55°C to 175°C; Case Style:TO-220; Cont Current Id:7A; Termination Type:Through Hole; Transistor Type:Power MOSFET; Typ Voltage Vds:100V; Typ Voltage Vgs th:3V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to STP14NF10.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

RoHS Status

Lead Free

Max Operating Temperature

Min Operating Temperature

Additional Feature

Radiation Hardening

JESD-30 Code

Drain-source On Resistance-Max

View Compare
STP14NF10

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

STripFET™ II

e3

Active

1 (Unlimited)

3

EAR99

130mOhm

Tin (Sn)

FET General Purpose Power

100V

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

15A

NOT SPECIFIED

STP14N

3

Not Qualified

1

60W Tc

Single

ENHANCEMENT MODE

60W

DRAIN

16 ns

N-Channel

SWITCHING

130m Ω @ 7A, 10V

4V @ 250μA

460pF @ 25V

15A Tc

21nC @ 10V

25ns

10V

±20V

8 ns

32 ns

15A

TO-220AB

20V

100V

60A

70 mJ

9.15mm

10.4mm

4.6mm

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-
STP11NM60FD

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

3

-

-

Tube

FDmesh™

e3

Active

1 (Unlimited)

3

EAR99

450mOhm

Tin (Sn)

FET General Purpose Power

600V

MOSFET (Metal Oxide)

-

-

11A

-

STP11N

3

-

1

160W Tc

Single

ENHANCEMENT MODE

160W

-

20 ns

N-Channel

SWITCHING

450m Ω @ 5.5A, 10V

5V @ 250μA

900pF @ 25V

11A Tc

40nC @ 10V

16ns

10V

±30V

15 ns

-

11A

TO-220AB

30V

600V

44A

-

15.75mm

10.4mm

4.6mm

ROHS3 Compliant

Lead Free

150°C

-65°C

AVALANCHE RATED

No

-

-

STP14NF10 vs STP11NM60FD
STP180NS04ZC

STMicroelectronics

NRND (Last Updated: 8 months ago)

-

Through Hole

Through Hole

TO-220-3

-

SILICON

-55°C~175°C TJ

Tube

SAFeFET™

e3

Not For New Designs

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

-

-

-

STP180

3

-

1

330W Tc

Single

ENHANCEMENT MODE

300W

-

-

N-Channel

SWITCHING

4.2m Ω @ 40A, 10V

4V @ 1mA

4560pF @ 25V

120A Tc

110nC @ 10V

250ns

10V

±20V

115 ns

-

120A

TO-220AB

20V

33V

480A

-

-

-

-

ROHS3 Compliant

-

-

-

-

No

R-PSFM-T3

0.0042Ohm

STP14NF10 vs STP180NS04ZC
STP150N3LLH6

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

-

SILICON

-55°C~175°C TJ

Tube

DeepGATE™, STripFET™ VI

e3

Obsolete

1 (Unlimited)

3

EAR99

3.3MOhm

Matte Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

-

NOT SPECIFIED

STP150

3

Not Qualified

1

110W Tc

Single

ENHANCEMENT MODE

110W

DRAIN

-

N-Channel

SWITCHING

3.3m Ω @ 40A, 10V

2.5V @ 250μA

4040pF @ 25V

80A Tc

40nC @ 4.5V

18ns

4.5V 10V

±20V

46 ns

75 ns

80A

TO-220AB

20V

30V

320A

525 mJ

-

-

-

ROHS3 Compliant

Lead Free

-

-

-

-

R-PSFM-T3

-

STP14NF10 vs STP150N3LLH6