STMicroelectronics STP140N6F7

Name: STP140N6F7
Brand: STMicroelectronics
SKU: 2849466-STP140N6F7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP140N6F7

Manufacturer:: STMicroelectronics

Ventron No:: 2849466-STP140N6F7

Description:: MOSFET N-CH 60V 80A F7 TO220AB

ECAD Model:

Datasheet:: STP140N6F7

Specifications

STMicroelectronics STP140N6F7 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP140N6F7.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
22 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
175°C TJ
Packaging
Tube
Series
STripFET™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP140
Power Dissipation-Max
158W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
3.5m Ω @ 40A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3100pF @ 10V
Current - Continuous Drain (Id) @ 25°C
80A Tc
Gate Charge (Qg) (Max) @ Vgs
55nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
80A
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP140N6F7 Overview
A device's maximal input capacitance is 3100pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

STP140N6F7 Features
a continuous drain current (ID) of 80A
a 60V drain to source voltage (Vdss)

STP140N6F7 Applications
There are a lot of STMicroelectronics
STP140N6F7 applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

STP140N6F7 More Descriptions

N-channel 60 V, 0.0031 Ohm typ., 80 A STripFET F7 Power MOSFET in TO-220 package
Trans MOSFET N-CH 60V 80A 3-Pin(3 Tab) TO-220AB Tube
60V 80A 158W 3.5m´Î@10V40A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Mosfet, N-Ch, 60V, 80A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Qualification:- Rohs Compliant: Yes |Stmicroelectronics STP140N6F7
Power Field-Effect Transistor, 80A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP140N6F7.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Technology

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

RoHS Status

Lead Free

Number of Pins

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Current Rating

Pin Count

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

Transistor Application

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

Reach Compliance Code

Qualification Status

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

Max Operating Temperature

Min Operating Temperature

Additional Feature

View Compare
STP140N6F7

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

22 Weeks

Through Hole

Through Hole

TO-220-3

175°C TJ

Tube

STripFET™

Active

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

STP140

158W Tc

N-Channel

3.5m Ω @ 40A, 10V

4V @ 250μA

3100pF @ 10V

80A Tc

55nC @ 10V

60V

10V

±20V

80A

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP16NK60Z

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

150°C TJ

Tube

SuperMESH™

Obsolete

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

-

-

STP16N

190W Tc

N-Channel

420m Ω @ 7A, 10V

4.5V @ 50μA

2650pF @ 25V

14A Tc

86nC @ 10V

-

10V

±30V

14A

ROHS3 Compliant

Lead Free

3

SILICON

e3

yes

3

38Ohm

Matte Tin (Sn)

FET General Purpose Power

600V

14A

3

1

Single

ENHANCEMENT MODE

190W

30 ns

SWITCHING

25ns

15 ns

70 ns

3.75V

TO-220AB

30V

600V

56A

15.75mm

10.4mm

4.6mm

No SVHC

No

-

-

-

-

-

-

-

STP140N6F7 vs STP16NK60Z
STP16NS25

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

-65°C~150°C TJ

Tube

MESH OVERLAY™

Obsolete

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

STP16N

140W Tc

N-Channel

280m Ω @ 8A, 10V

4V @ 250μA

1270pF @ 25V

16A Tc

83nC @ 10V

-

10V

±20V

16A

ROHS3 Compliant

-

3

SILICON

e3

-

3

-

Matte Tin (Sn)

FET General Purpose Power

250V

16A

3

1

Single

ENHANCEMENT MODE

140W

-

SWITCHING

26ns

32 ns

-

-

TO-220AB

20V

250V

64A

-

-

-

-

-

not_compliant

Not Qualified

0.28Ohm

600 mJ

-

-

-

STP140N6F7 vs STP16NS25
STP11NM60FD

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

-

Tube

FDmesh™

Active

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

-

-

STP11N

160W Tc

N-Channel

450m Ω @ 5.5A, 10V

5V @ 250μA

900pF @ 25V

11A Tc

40nC @ 10V

-

10V

±30V

11A

ROHS3 Compliant

Lead Free

3

-

e3

-

3

450mOhm

Tin (Sn)

FET General Purpose Power

600V

11A

3

1

Single

ENHANCEMENT MODE

160W

20 ns

SWITCHING

16ns

15 ns

-

-

TO-220AB

30V

600V

44A

15.75mm

10.4mm

4.6mm

-

No

-

-

-

-

150°C

-65°C

AVALANCHE RATED

STP140N6F7 vs STP11NM60FD