STMicroelectronics STP130N6F7

Name: STP130N6F7
Brand: STMicroelectronics
SKU: 2485111-STP130N6F7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP130N6F7

Manufacturer:: STMicroelectronics

Ventron No:: 2485111-STP130N6F7

Description:: MOSFET N-CH 60V 80A F7 TO220AB

ECAD Model:

Datasheet:: STP130N6F7

Specifications

STMicroelectronics STP130N6F7 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP130N6F7.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
22 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™ F7
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP130
Power Dissipation-Max
160W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
5m Ω @ 40A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2600pF @ 25V
Current - Continuous Drain (Id) @ 25°C
80A Tc
Gate Charge (Qg) (Max) @ Vgs
42nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
80A
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP130N6F7 Description
This N-channel power MOSFET uses STripFET STripFET F7 technology and an enhanced grooved gate structure to achieve extremely low on-resistance while reducing internal capacitance and gate charge for faster and more efficient switching.

STP130N6F7 Features
· Among the lowest RDS(on) on the market · Excellent figure of merit (FoM) · Low Crss/Ciss ratio for EMI immunity · High avalanche ruggedness
STP130N6F7 Applications
· Switching applications

STP130N6F7 More Descriptions

N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in TO-220 package
Trans MOSFET N-CH 60V 80A 3-Pin(3 Tab) TO-220AB Tube
Mosfet, N-Ch, 60V, 80A, 175Deg C; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0042Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Stmicroelectronics STP130N6F7

Product Comparison

The three parts on the right have similar specifications to STP130N6F7.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Technology

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

RoHS Status

Lead Free

Number of Pins

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Current Rating

Pin Count

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

Transistor Application

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

Configuration

Reach Compliance Code

JESD-30 Code

Qualification Status

Case Connection

Avalanche Energy Rating (Eas)

View Compare
STP130N6F7

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

22 Weeks

Through Hole

Through Hole

TO-220-3

-55°C~175°C TJ

Tube

STripFET™ F7

Active

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

STP130

160W Tc

N-Channel

5m Ω @ 40A, 10V

4V @ 250μA

2600pF @ 25V

80A Tc

42nC @ 10V

60V

10V

±20V

80A

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP16NK60Z

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

150°C TJ

Tube

SuperMESH™

Obsolete

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

-

-

STP16N

190W Tc

N-Channel

420m Ω @ 7A, 10V

4.5V @ 50μA

2650pF @ 25V

14A Tc

86nC @ 10V

-

10V

±30V

14A

ROHS3 Compliant

Lead Free

3

SILICON

e3

yes

3

38Ohm

Matte Tin (Sn)

FET General Purpose Power

600V

14A

3

1

Single

ENHANCEMENT MODE

190W

30 ns

SWITCHING

25ns

15 ns

70 ns

3.75V

TO-220AB

30V

600V

56A

15.75mm

10.4mm

4.6mm

No SVHC

No

-

-

-

-

-

-

STP130N6F7 vs STP16NK60Z
STP16N60M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

150°C TJ

Tube

MDmesh™ M2

Active

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

-

-

STP16N

110W Tc

N-Channel

320m Ω @ 6A, 10V

4V @ 250μA

700pF @ 100V

12A Tc

19nC @ 10V

600V

10V

±25V

12A

ROHS3 Compliant

-

-

-

-

-

-

-

-

FET General Purpose Power

-

-

-

-

-

ENHANCEMENT MODE

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Single

-

-

-

-

-

STP130N6F7 vs STP16N60M2
STP150N3LLH6

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

-55°C~175°C TJ

Tube

DeepGATE™, STripFET™ VI

Obsolete

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

STP150

110W Tc

N-Channel

3.3m Ω @ 40A, 10V

2.5V @ 250μA

4040pF @ 25V

80A Tc

40nC @ 4.5V

-

4.5V 10V

±20V

80A

ROHS3 Compliant

Lead Free

-

SILICON

e3

-

3

3.3MOhm

Matte Tin (Sn)

FET General Purpose Power

-

-

3

1

Single

ENHANCEMENT MODE

110W

-

SWITCHING

18ns

46 ns

75 ns

-

TO-220AB

20V

30V

320A

-

-

-

-

-

-

not_compliant

R-PSFM-T3

Not Qualified

DRAIN

525 mJ

STP130N6F7 vs STP150N3LLH6