STMicroelectronics STP12NM60N

Name: STP12NM60N
Brand: STMicroelectronics
SKU: 3070917-STP12NM60N
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP12NM60N

Manufacturer:: STMicroelectronics

Ventron No:: 3070917-STP12NM60N

Description:: MOSFET N-CH 600V 10A TO-220

ECAD Model:

Datasheet:: STx12NM60N(-1)

Specifications

STMicroelectronics STP12NM60N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP12NM60N.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
410mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP12
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
90W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
90W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
410m Ω @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
960pF @ 50V
Current - Continuous Drain (Id) @ 25°C
10A Tc
Gate Charge (Qg) (Max) @ Vgs
30.5nC @ 10V
Rise Time
9ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
60 ns
Continuous Drain Current (ID)
10A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
40A
Avalanche Energy Rating (Eas)
200 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP12NM60N Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 200 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 960pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 10A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 60 ns.Peak drain current for this device is 40A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.

STP12NM60N Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 40A.

STP12NM60N Applications
There are a lot of STMicroelectronics
STP12NM60N applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

STP12NM60N More Descriptions

N-channel 600V - 0.35Ohm - 10A - D2/I2PAK - TO-220/FP - TO-247
Trans MOSFET N-CH 600V 10A 3-Pin (3 Tab) TO-220 Tube
Power Field-Effect Transistor, 10A I(D), 600V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 10A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: -; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 3V; Power Dissi
MOSFET N CH 600V 10A TO-220; Transistor Polarity:N Channel; On State Resistance:350mohm; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220; Case Style:TO-220; Cont Current Id:5A; Termination Type:Through Hole;;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to STP12NM60N.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Number of Pins

Pbfree Code

Voltage - Rated DC

Current Rating

Turn On Delay Time

Threshold Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

Drain-source On Resistance-Max

Lifecycle Status

Factory Lead Time

Configuration

Drain to Source Voltage (Vdss)

View Compare
STP12NM60N

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II

e3

Obsolete

1 (Unlimited)

3

EAR99

410mOhm

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

NOT SPECIFIED

STP12

3

R-PSFM-T3

Not Qualified

1

90W Tc

Single

ENHANCEMENT MODE

90W

N-Channel

SWITCHING

410m Ω @ 5A, 10V

4V @ 250μA

960pF @ 50V

10A Tc

30.5nC @ 10V

9ns

10V

±25V

10 ns

60 ns

10A

TO-220AB

25V

600V

40A

200 mJ

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP16NK60Z

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

150°C TJ

Tube

SuperMESH™

e3

Obsolete

1 (Unlimited)

3

EAR99

38Ohm

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

-

STP16N

3

-

-

1

190W Tc

Single

ENHANCEMENT MODE

190W

N-Channel

SWITCHING

420m Ω @ 7A, 10V

4.5V @ 50μA

2650pF @ 25V

14A Tc

86nC @ 10V

25ns

10V

±30V

15 ns

70 ns

14A

TO-220AB

30V

600V

56A

-

ROHS3 Compliant

Lead Free

3

yes

600V

14A

30 ns

3.75V

15.75mm

10.4mm

4.6mm

No SVHC

No

-

-

-

-

-

STP12NM60N vs STP16NK60Z
STP16NS25

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

-65°C~150°C TJ

Tube

MESH OVERLAY™

e3

Obsolete

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

NOT SPECIFIED

STP16N

3

-

Not Qualified

1

140W Tc

Single

ENHANCEMENT MODE

140W

N-Channel

SWITCHING

280m Ω @ 8A, 10V

4V @ 250μA

1270pF @ 25V

16A Tc

83nC @ 10V

26ns

10V

±20V

32 ns

-

16A

TO-220AB

20V

250V

64A

600 mJ

ROHS3 Compliant

-

3

-

250V

16A

-

-

-

-

-

-

-

0.28Ohm

-

-

-

-

STP12NM60N vs STP16NS25
STP16N60M2

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

150°C TJ

Tube

MDmesh™ M2

-

Active

1 (Unlimited)

-

EAR99

-

-

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

-

STP16N

-

-

-

-

110W Tc

-

ENHANCEMENT MODE

-

N-Channel

-

320m Ω @ 6A, 10V

4V @ 250μA

700pF @ 100V

12A Tc

19nC @ 10V

-

10V

±25V

-

-

12A

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Single

600V

STP12NM60N vs STP16N60M2