STMicroelectronics STP12NM50N

Name: STP12NM50N
Brand: STMicroelectronics
SKU: 2488544-STP12NM50N
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP12NM50N

Manufacturer:: STMicroelectronics

Ventron No:: 2488544-STP12NM50N

Description:: MOSFET N-CH 500V 11A TO-220

ECAD Model:

Datasheet:: STP12NM50N

Specifications

STMicroelectronics STP12NM50N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP12NM50N.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
380mOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
500V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
11A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP12
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
100W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
100W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
380m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
940pF @ 50V
Current - Continuous Drain (Id) @ 25°C
11A Tc
Gate Charge (Qg) (Max) @ Vgs
30nC @ 10V
Rise Time
15ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
14 ns
Turn-Off Delay Time
60 ns
Continuous Drain Current (ID)
11A
Threshold Voltage
3V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
44A
Isolation Voltage
2.5kV
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP12NM50N Description
STP12NM50N is a 500v N-channel MDmesh? II Power MOSFET. This STP12NM50N is realized with the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company?ˉs strip layout to yield one of the world?ˉs lowest on-resistance and gate charges. It is, therefore, suitable for the most demanding high-efficiency converters.

STP12NM50N Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Drain-source voltage (VGS = 0): 500v
Total dissipation at TC = 25 ??C: 100w

STP12NM50N Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch

STP12NM50N More Descriptions

Transistor MOSFET N-CH 500V 11A 3-Pin (3 Tab) TO-220 Tube
N-channel 500V - 0.29Ohm - 11A - TO-220 /FP- D2PAK - DPAK
MOSFET 500V 0.33 OHM 11A, TO 220 AB NON ISOLPower Field-Effect Transistor, 11A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 500V, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:11A; Resistance, Rds On:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220; ;RoHS Compliant: Yes
MOSFET, N, 500V, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.38ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 100W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Avalanche Single Pulse Energy Eas: 350mJ; Capacitance Ciss Typ: 880pF; Current Iar: 5A; Current Id Max: 11A; Isolation Voltage: 2.5kV; On State resistance @ Vgs = 10V: 380mohm; Pulse Current Idm: 44A; Termination Type: Through Hole; Voltage Vds: 500V; Voltage Vds Typ: 500V; Voltage Vgs Max: 25V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V; Voltage Vgs th Min: 2V

Product Comparison

The three parts on the right have similar specifications to STP12NM50N.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Isolation Voltage

REACH SVHC

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Max Operating Temperature

Min Operating Temperature

Additional Feature

Turn On Delay Time

Height

Length

Width

Radiation Hardening

JESD-30 Code

Drain-source On Resistance-Max

Number of Channels

Case Connection

Avalanche Energy Rating (Eas)

Max Junction Temperature (Tj)

View Compare
STP12NM50N

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II

e3

Obsolete

1 (Unlimited)

3

EAR99

380mOhm

Tin (Sn)

FET General Purpose Power

500V

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

11A

NOT SPECIFIED

STP12

3

Not Qualified

1

100W Tc

Single

ENHANCEMENT MODE

100W

N-Channel

SWITCHING

380m Ω @ 5.5A, 10V

4V @ 250μA

940pF @ 50V

11A Tc

30nC @ 10V

15ns

10V

±25V

14 ns

60 ns

11A

3V

TO-220AB

25V

500V

44A

2.5kV

No SVHC

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP11NM60FD

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

-

-

Tube

FDmesh™

e3

Active

1 (Unlimited)

3

EAR99

450mOhm

Tin (Sn)

FET General Purpose Power

600V

MOSFET (Metal Oxide)

-

-

11A

-

STP11N

3

-

1

160W Tc

Single

ENHANCEMENT MODE

160W

N-Channel

SWITCHING

450m Ω @ 5.5A, 10V

5V @ 250μA

900pF @ 25V

11A Tc

40nC @ 10V

16ns

10V

±30V

15 ns

-

11A

-

TO-220AB

30V

600V

44A

-

-

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

16 Weeks

150°C

-65°C

AVALANCHE RATED

20 ns

15.75mm

10.4mm

4.6mm

No

-

-

-

-

-

-

STP12NM50N vs STP11NM60FD
STP180NS04ZC

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

SILICON

-55°C~175°C TJ

Tube

SAFeFET™

e3

Not For New Designs

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

-

-

-

STP180

3

-

1

330W Tc

Single

ENHANCEMENT MODE

300W

N-Channel

SWITCHING

4.2m Ω @ 40A, 10V

4V @ 1mA

4560pF @ 25V

120A Tc

110nC @ 10V

250ns

10V

±20V

115 ns

-

120A

-

TO-220AB

20V

33V

480A

-

-

ROHS3 Compliant

-

NRND (Last Updated: 8 months ago)

-

-

-

-

-

-

-

-

No

R-PSFM-T3

0.0042Ohm

-

-

-

-

STP12NM50N vs STP180NS04ZC
STP12NM50FP

STMicroelectronics

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-65°C~150°C TJ

Tube

MDmesh™

e3

Active

1 (Unlimited)

3

-

350mOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

500V

MOSFET (Metal Oxide)

-

-

12A

-

STP12

3

-

1

35W Tc

Single

ENHANCEMENT MODE

35W

N-Channel

SWITCHING

350m Ω @ 6A, 10V

5V @ 50μA

1000pF @ 25V

12A Tc

39nC @ 10V

10ns

10V

±30V

-

-

12A

4V

TO-220AB

30V

500V

48A

-

-

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

16 Weeks

-

-

AVALANCHE RATED

20 ns

20mm

10.4mm

4.6mm

No

-

-

1

ISOLATED

400 mJ

150°C

STP12NM50N vs STP12NM50FP