STMicroelectronics STP12NM50

Name: STP12NM50
Brand: STMicroelectronics
SKU: 2485044-STP12NM50
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP12NM50

Manufacturer:: STMicroelectronics

Ventron No:: 2485044-STP12NM50

Description:: MOSFET N-CH 500V 12A TO-220

ECAD Model:

Datasheet:: STP12NM50

Specifications

STMicroelectronics STP12NM50 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP12NM50.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Series
MDmesh™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
350mOhm
Terminal Finish
Tin (Sn)
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
500V
Technology
MOSFET (Metal Oxide)
Current Rating
12A
Base Part Number
STP12
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
160W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
160W
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
350m Ω @ 6A, 10V
Vgs(th) (Max) @ Id
5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
1000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Tc
Gate Charge (Qg) (Max) @ Vgs
39nC @ 10V
Rise Time
10ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Continuous Drain Current (ID)
12A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
500V
Pulsed Drain Current-Max (IDM)
48A
Avalanche Energy Rating (Eas)
400 mJ
Max Junction Temperature (Tj)
150°C
Height
19.68mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP12NM50 Description
The MDmeshTM is a brand-new, ground-breaking MOSFET technology that joins the company's PowerMESHTM horizontal arrangement with the Multiple Drain process. The finished product has superb avalanche characteristics, an extremely high dv/dt, and an outstanding low on-resistance. When using the company's own strip process, products outperform equivalent ones from other companies in terms of total dynamic performance.

STP12NM50 Features
High dv/dt and avalanche capabilities
Low input capacitance and gate charge
100% avalanche tested
Low gate input resistance
Tight process control and high manufacturing yields

STP12NM50 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

STP12NM50 More Descriptions

Transistor MOSFET N Channel 500 Volt 12 Amp 3 Pin 3 Tab TO-220 Tube
N-Channel 500V - 0.30 Ohm - 12A TO-220 MDmesh(TM) POWER MOSFET
N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET / Trans MOSFET N-CH 500V 12A 3-Pin(3 Tab) TO-220AB Tube
N-Channel 550 V 0.35 O 28 nC Flange Mount MDmesh Power MosFet - TO-220
N Channel Mosfet, 550V, 12A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:550V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Stmicroelectronics STP12NM50.
Power Field-Effect Transistor, 12A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP12NM50.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Max Junction Temperature (Tj)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Fall Time (Typ)

Drain-source On Resistance-Max

JESD-30 Code

Case Connection

View Compare
STP12NM50

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

3

4.535924g

SILICON

-65°C~150°C TJ

Tube

MDmesh™

e3

Active

1 (Unlimited)

3

EAR99

350mOhm

Tin (Sn)

AVALANCHE RATED

FET General Purpose Power

500V

MOSFET (Metal Oxide)

12A

STP12

3

1

1

160W Tc

Single

ENHANCEMENT MODE

160W

20 ns

N-Channel

SWITCHING

350m Ω @ 6A, 10V

5V @ 50μA

1000pF @ 25V

12A Tc

39nC @ 10V

10ns

10V

±30V

12A

4V

TO-220AB

30V

500V

48A

400 mJ

150°C

19.68mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
STP16NS25

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

3

-

SILICON

-65°C~150°C TJ

Tube

MESH OVERLAY™

e3

Obsolete

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

-

FET General Purpose Power

250V

MOSFET (Metal Oxide)

16A

STP16N

3

1

-

140W Tc

Single

ENHANCEMENT MODE

140W

-

N-Channel

SWITCHING

280m Ω @ 8A, 10V

4V @ 250μA

1270pF @ 25V

16A Tc

83nC @ 10V

26ns

10V

±20V

16A

-

TO-220AB

20V

250V

64A

600 mJ

-

-

-

-

-

-

ROHS3 Compliant

-

NOT SPECIFIED

not_compliant

NOT SPECIFIED

Not Qualified

32 ns

0.28Ohm

-

-

STP12NM50 vs STP16NS25
STP180NS04ZC

STMicroelectronics

NRND (Last Updated: 8 months ago)

-

Through Hole

Through Hole

TO-220-3

-

-

SILICON

-55°C~175°C TJ

Tube

SAFeFET™

e3

Not For New Designs

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP180

3

1

-

330W Tc

Single

ENHANCEMENT MODE

300W

-

N-Channel

SWITCHING

4.2m Ω @ 40A, 10V

4V @ 1mA

4560pF @ 25V

120A Tc

110nC @ 10V

250ns

10V

±20V

120A

-

TO-220AB

20V

33V

480A

-

-

-

-

-

-

No

ROHS3 Compliant

-

-

-

-

-

115 ns

0.0042Ohm

R-PSFM-T3

-

STP12NM50 vs STP180NS04ZC
STP12NM50FP

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

-

SILICON

-65°C~150°C TJ

Tube

MDmesh™

e3

Active

1 (Unlimited)

3

-

350mOhm

Matte Tin (Sn) - annealed

AVALANCHE RATED

FET General Purpose Power

500V

MOSFET (Metal Oxide)

12A

STP12

3

1

1

35W Tc

Single

ENHANCEMENT MODE

35W

20 ns

N-Channel

SWITCHING

350m Ω @ 6A, 10V

5V @ 50μA

1000pF @ 25V

12A Tc

39nC @ 10V

10ns

10V

±30V

12A

4V

TO-220AB

30V

500V

48A

400 mJ

150°C

20mm

10.4mm

4.6mm

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

ISOLATED

STP12NM50 vs STP12NM50FP