STMicroelectronics STP12N65M2

Name: STP12N65M2
Brand: STMicroelectronics
SKU: 2484773-STP12N65M2
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP12N65M2

Manufacturer:: STMicroelectronics

Ventron No:: 2484773-STP12N65M2

Description:: POWER MOSFET

ECAD Model:

Datasheet:: STP12N65M2

Specifications

STMicroelectronics STP12N65M2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP12N65M2.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
16 Weeks
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP12
RoHS Status
ROHS3 Compliant

Description

STP12N65M2 Overview

STP12N65M2 Features

STP12N65M2 Applications
There are a lot of STMicroelectronics
STP12N65M2 applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

STP12N65M2 More Descriptions

N-channel 650 V, 0.42 Ohm typ., 8 A MDmesh M2 Power MOSFET in TO-220 packageCiiva Crawler
Hv Mosfet Mdmesh |Stmicroelectronics STP12N65M2
Power MOSFETs, 650V, 8A, TO-220, TubeSTMicroelectronics SCT
N-channel MDmesh >350 V to 700 V
CAP CER 1000PF 100V C0G RADIAL

Product Comparison

The three parts on the right have similar specifications to STP12N65M2.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Part Status

Moisture Sensitivity Level (MSL)

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

RoHS Status

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Reach Compliance Code

Current Rating

Pin Count

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Resistance

Additional Feature

Number of Channels

Case Connection

Turn On Delay Time

Threshold Voltage

Max Junction Temperature (Tj)

Height

Length

Width

Radiation Hardening

Lead Free

Configuration

Drain to Source Voltage (Vdss)

View Compare
STP12N65M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Active

1 (Unlimited)

NOT SPECIFIED

NOT SPECIFIED

STP12

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP16NS25

STMicroelectronics

-

-

Obsolete

1 (Unlimited)

NOT SPECIFIED

NOT SPECIFIED

STP16N

ROHS3 Compliant

Through Hole

Through Hole

TO-220-3

3

SILICON

-65°C~150°C TJ

Tube

MESH OVERLAY™

e3

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

250V

MOSFET (Metal Oxide)

not_compliant

16A

3

Not Qualified

1

140W Tc

Single

ENHANCEMENT MODE

140W

N-Channel

SWITCHING

280m Ω @ 8A, 10V

4V @ 250μA

1270pF @ 25V

16A Tc

83nC @ 10V

26ns

10V

±20V

32 ns

16A

TO-220AB

20V

0.28Ohm

250V

64A

600 mJ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STP12N65M2 vs STP16NS25
STP12NM50FP

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Active

1 (Unlimited)

-

-

STP12

ROHS3 Compliant

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-65°C~150°C TJ

Tube

MDmesh™

e3

3

-

Matte Tin (Sn) - annealed

FET General Purpose Power

500V

MOSFET (Metal Oxide)

-

12A

3

-

1

35W Tc

Single

ENHANCEMENT MODE

35W

N-Channel

SWITCHING

350m Ω @ 6A, 10V

5V @ 50μA

1000pF @ 25V

12A Tc

39nC @ 10V

10ns

10V

±30V

-

12A

TO-220AB

30V

-

500V

48A

400 mJ

350mOhm

AVALANCHE RATED

1

ISOLATED

20 ns

4V

150°C

20mm

10.4mm

4.6mm

No

Lead Free

-

-

STP12N65M2 vs STP12NM50FP
STP16N60M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Active

1 (Unlimited)

-

-

STP16N

ROHS3 Compliant

Through Hole

Through Hole

TO-220-3

-

-

150°C TJ

Tube

MDmesh™ M2

-

-

EAR99

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

-

-

-

-

110W Tc

-

ENHANCEMENT MODE

-

N-Channel

-

320m Ω @ 6A, 10V

4V @ 250μA

700pF @ 100V

12A Tc

19nC @ 10V

-

10V

±25V

-

12A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Single

600V

STP12N65M2 vs STP16N60M2