STMicroelectronics STP120NH03L
- Part Number:
- STP120NH03L
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 3070916-STP120NH03L
- Description:
- MOSFET N-CH 30V 60A TO-220
- Datasheet:
- STx120NH03L
STMicroelectronics STP120NH03L technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP120NH03L.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesSTripFET™
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureLOW THRESHOLD
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)245
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberSTP120
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max110W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time16 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs5.5m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4100pF @ 25V
- Current - Continuous Drain (Id) @ 25°C60A Tc
- Gate Charge (Qg) (Max) @ Vgs77nC @ 10V
- Rise Time95ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)23 ns
- Turn-Off Delay Time48 ns
- Continuous Drain Current (ID)60A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.0105Ohm
- Pulsed Drain Current-Max (IDM)240A
- DS Breakdown Voltage-Min30V
- Avalanche Energy Rating (Eas)700 mJ
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
STP120NH03L Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 700 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4100pF @ 25V.This device conducts a continuous drain current (ID) of 60A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 48 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 240A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
STP120NH03L Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 60A
the turn-off delay time is 48 ns
based on its rated peak drain current 240A.
a 30V drain to source voltage (Vdss)
STP120NH03L Applications
There are a lot of STMicroelectronics
STP120NH03L applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 700 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4100pF @ 25V.This device conducts a continuous drain current (ID) of 60A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 48 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 240A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 5V 10V volts (5V 10V).
STP120NH03L Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 60A
the turn-off delay time is 48 ns
based on its rated peak drain current 240A.
a 30V drain to source voltage (Vdss)
STP120NH03L Applications
There are a lot of STMicroelectronics
STP120NH03L applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
STP120NH03L More Descriptions
N-channel 30V - 0.005Ohm - 60A - TO-220 / D2PAK / I2PAK
MOSFET N-CH 30V 60A TO220AB
Power Field-Effect Transistor, 60A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
OEMs, CMs ONLY (NO BROKERS)
CAP CER 100PF 100V C0G RADIAL
MOSFET N-CH 30V 60A TO220AB
Power Field-Effect Transistor, 60A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
OEMs, CMs ONLY (NO BROKERS)
CAP CER 100PF 100V C0G RADIAL
The three parts on the right have similar specifications to STP120NH03L.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Radiation HardeningRoHS StatusLifecycle StatusFactory Lead TimeNumber of PinsJESD-609 CodeResistanceTerminal FinishVoltage - Rated DCCurrent RatingNumber of ChannelsElement ConfigurationPower DissipationThreshold VoltageDrain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightLengthWidthLead FreeREACH SVHCReach Compliance CodeQualification StatusView Compare
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STP120NH03LThrough HoleThrough HoleTO-220-3SILICON-55°C~175°C TJTubeSTripFET™Obsolete1 (Unlimited)3EAR99LOW THRESHOLDFET General Purpose PowerMOSFET (Metal Oxide)SINGLE24540STP1203R-PSFM-T31SINGLE WITH BUILT-IN DIODE110W TcENHANCEMENT MODEDRAIN16 nsN-ChannelSWITCHING5.5m Ω @ 30A, 10V3V @ 250μA4100pF @ 25V60A Tc77nC @ 10V95ns30V5V 10V±20V23 ns48 ns60ATO-220AB20V0.0105Ohm240A30V700 mJNoROHS3 Compliant----------------------
-
Through HoleThrough HoleTO-220-3 Full PackSILICON-65°C~150°C TJTubeMDmesh™Active1 (Unlimited)3-AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)---STP123-1-35W TcENHANCEMENT MODEISOLATED20 nsN-ChannelSWITCHING350m Ω @ 6A, 10V5V @ 50μA1000pF @ 25V12A Tc39nC @ 10V10ns-10V±30V--12ATO-220AB30V-48A-400 mJNoROHS3 CompliantACTIVE (Last Updated: 8 months ago)16 Weeks3e3350mOhmMatte Tin (Sn) - annealed500V12A1Single35W4V500V150°C20mm10.4mm4.6mmLead Free---
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Through HoleThrough HoleTO-220-3SILICON-55°C~150°C TJTubeMDmesh™ IIActive1 (Unlimited)3EAR99-FET General Purpose PowerMOSFET (Metal Oxide)---STP18N3-1-110W TcENHANCEMENT MODE-12 nsN-ChannelSWITCHING285m Ω @ 6.5A, 10V4V @ 250μA1000pF @ 50V13A Tc35nC @ 10V15ns-10V±25V25 ns55 ns13ATO-220AB25V-52A--NoROHS3 CompliantACTIVE (Last Updated: 8 months ago)16 Weeks3-285mOhm----Single110W3V600V-15.75mm10.4mm4.6mmLead FreeNo SVHC--
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Through HoleThrough HoleTO-220-3SILICON-55°C~175°C TJTubeDeepGATE™, STripFET™ VIObsolete1 (Unlimited)3EAR99-FET General Purpose PowerMOSFET (Metal Oxide)-NOT SPECIFIEDNOT SPECIFIEDSTP1503R-PSFM-T31-110W TcENHANCEMENT MODEDRAIN-N-ChannelSWITCHING3.3m Ω @ 40A, 10V2.5V @ 250μA4040pF @ 25V80A Tc40nC @ 4.5V18ns-4.5V 10V±20V46 ns75 ns80ATO-220AB20V-320A-525 mJ-ROHS3 Compliant---e33.3MOhmMatte Tin (Sn)---Single110W-30V----Lead Free-not_compliantNot Qualified
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