STMicroelectronics STP120N10F4
- Part Number:
- STP120N10F4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2488187-STP120N10F4
- Description:
- MOSFET N-CH 100V TO-220
- ECAD Model:
-
- Datasheet:
- STP120N10F4
STMicroelectronics STP120N10F4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP120N10F4.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTP120
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max300W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Transistor ApplicationSWITCHING
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Polarity/Channel TypeN-CHANNEL
- JEDEC-95 CodeTO-220AB
- Drain Current-Max (Abs) (ID)120A
- Drain-source On Resistance-Max0.01Ohm
- Pulsed Drain Current-Max (IDM)390A
- DS Breakdown Voltage-Min100V
- Avalanche Energy Rating (Eas)215 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- RoHS StatusROHS3 Compliant
STP120N10F4 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 215 mJ.A device's drain current is its maximum continuous current, and this device's drain current is 120A.A maximum pulsed drain current of 390A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100V.Its overall power consumption can be reduced by using drive voltage (10V).
STP120N10F4 Features
the avalanche energy rating (Eas) is 215 mJ
based on its rated peak drain current 390A.
STP120N10F4 Applications
There are a lot of STMicroelectronics
STP120N10F4 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 215 mJ.A device's drain current is its maximum continuous current, and this device's drain current is 120A.A maximum pulsed drain current of 390A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 100V.Its overall power consumption can be reduced by using drive voltage (10V).
STP120N10F4 Features
the avalanche energy rating (Eas) is 215 mJ
based on its rated peak drain current 390A.
STP120N10F4 Applications
There are a lot of STMicroelectronics
STP120N10F4 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
STP120N10F4 More Descriptions
MOSFET N-channel 100 V, 9 mOhm, 120 A TO-220 STripFET(TM), POWER MOSFET
Power Field-Effect Transistor, 120A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET N-CH 100V TO-220
CAP CER 9PF 100V C0G RADIAL
POWER TRANSISTORS
Power Field-Effect Transistor, 120A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET N-CH 100V TO-220
CAP CER 9PF 100V C0G RADIAL
POWER TRANSISTORS
The three parts on the right have similar specifications to STP120N10F4.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionTransistor ApplicationDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Polarity/Channel TypeJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)FET TechnologyRoHS StatusNumber of PinsSeriesJESD-609 CodeTerminal FinishVoltage - Rated DCTechnologyReach Compliance CodeCurrent RatingPin CountQualification StatusElement ConfigurationPower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageLifecycle StatusFactory Lead TimeResistanceTurn On Delay TimeTurn-Off Delay TimeThreshold VoltageHeightLengthWidthREACH SVHCRadiation HardeningLead FreeDrain to Source Voltage (Vdss)View Compare
-
STP120N10F4Through HoleThrough HoleTO-220-3SILICON-55°C~175°C TJTubeObsolete1 (Unlimited)3EAR99AVALANCHE RATEDFET General Purpose PowerSINGLENOT SPECIFIEDNOT SPECIFIEDSTP120R-PSFM-T31SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEDRAINSWITCHING10V±20VN-CHANNELTO-220AB120A0.01Ohm390A100V215 mJMETAL-OXIDE SEMICONDUCTORROHS3 Compliant------------------------------------- -
Through HoleThrough HoleTO-220-3SILICON-65°C~150°C TJTubeObsolete1 (Unlimited)3EAR99-FET General Purpose Power-NOT SPECIFIEDNOT SPECIFIEDSTP16N-1-140W TcENHANCEMENT MODE-SWITCHING10V±20V-TO-220AB-0.28Ohm64A-600 mJ-ROHS3 Compliant3MESH OVERLAY™e3Matte Tin (Sn)250VMOSFET (Metal Oxide)not_compliant16A3Not QualifiedSingle140WN-Channel280m Ω @ 8A, 10V4V @ 250μA1270pF @ 25V16A Tc83nC @ 10V26ns32 ns16A20V250V-------------
-
Through HoleThrough HoleTO-220-3SILICON-55°C~150°C TJTubeActive1 (Unlimited)3EAR99-FET General Purpose Power---STP18N-1-110W TcENHANCEMENT MODE-SWITCHING10V±25V-TO-220AB--52A---ROHS3 Compliant3MDmesh™ II---MOSFET (Metal Oxide)--3-Single110WN-Channel285m Ω @ 6.5A, 10V4V @ 250μA1000pF @ 50V13A Tc35nC @ 10V15ns25 ns13A25V600VACTIVE (Last Updated: 8 months ago)16 Weeks285mOhm12 ns55 ns3V15.75mm10.4mm4.6mmNo SVHCNoLead Free-
-
Through HoleThrough HoleTO-220-3-150°C TJTubeActive1 (Unlimited)-EAR99-FET General Purpose Power---STP16N--Single110W TcENHANCEMENT MODE--10V±25V--------ROHS3 Compliant-MDmesh™ M2---MOSFET (Metal Oxide)------N-Channel320m Ω @ 6A, 10V4V @ 250μA700pF @ 100V12A Tc19nC @ 10V--12A--ACTIVE (Last Updated: 8 months ago)16 Weeks----------600V
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
16 November 2023
7815 Voltage Regulator Symbol, Features, Mnufacturer and Working Principle
Ⅰ. Overview of 7815 voltage regulatorⅡ. 7815 symbol, footprint and 3D modelsⅢ. Features of 7815 voltage regulatorⅣ. Manufacturer of 7815 voltage regulatorⅤ. Technical parameters of 7815 voltage regulatorⅥ.... -
17 November 2023
IRF3710 Transistor Equivalents, Working Principle, Applications and Other Details
Ⅰ. Overview of IRF3710 transistorⅡ. Symbol, footprint and pin configuration of IRF3710 transistorⅢ. Features of IRF3710 transistorⅣ. Technical parameters of IRF3710 transistorⅤ. How does the IRF3710 transistor work?Ⅵ.... -
17 November 2023
MSP430 Microcontroller Features, Development, MSP430 vs 89C51 and Applications
Ⅰ. What is a microcontroller?Ⅱ. Overview of MSP430 microcontrollerⅢ. Features of MSP430Ⅳ. Development of MSP430 microcontrollerⅤ. Main components of MSP430 microcontrollerⅥ. What are the advantages and disadvantages of... -
20 November 2023
What is W25Q128JVSIQ Serial Flash Memory?
Ⅰ. W25Q128JVSIQ overviewⅡ. Manufacturer of W25Q128JVSIQⅢ. Symbol, footprint and pin configuration of W25Q128JVSIQⅣ. Features of W25Q128JVSIQⅤ. Working principle of W25Q128JVSIQⅥ. Technical parameters of W25Q128JVSIQⅦ. Advantages and disadvantages of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.