STMicroelectronics STP11NM80

Name: STP11NM80
Brand: STMicroelectronics
SKU: 2849140-STP11NM80
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP11NM80

Manufacturer:: STMicroelectronics

Ventron No:: 2849140-STP11NM80

Description:: MOSFET N-CH 800V 11A TO-220

ECAD Model:

Datasheet:: STP11NM80

Specifications

STMicroelectronics STP11NM80 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP11NM80.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Series
MDmesh™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
400mOhm
Terminal Finish
Matte Tin (Sn)
Additional Feature
ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Voltage - Rated DC
800V
Technology
MOSFET (Metal Oxide)
Current Rating
11A
Base Part Number
STP11N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
150W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
150W
Turn On Delay Time
22 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
400m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1630pF @ 25V
Current - Continuous Drain (Id) @ 25°C
11A Tc
Gate Charge (Qg) (Max) @ Vgs
43.6nC @ 10V
Rise Time
17ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
46 ns
Continuous Drain Current (ID)
11A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
800V
Pulsed Drain Current-Max (IDM)
44A
Avalanche Energy Rating (Eas)
400 mJ
Height
9.15mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP11NM80 Description
STP11NM80 emerges as a member of N-channel power MOSFETs provided by STMicroelectronics based on its revolutionary MDmesh? technology. As a result, it is able to provide low on-state resistance, high dv/dt, and excellent avalanche characteristics. STP11NM80 provides considerable benefits for switching applications. It boasts an overall dynamic performance that is superior to similar products available on the market.

STP11NM80 Features
High dv/dt
Low input capacitance
Low gate charge
Low gate input resistance
Available in the TO-220 package

STP11NM80 Applications
Switching applications

STP11NM80 More Descriptions

N-channel 800 V, 0.35 Ohm, 11 A MDmesh(TM) Power MOSFET in TO-220
Trans MOSFET N-CH 800V 11A 3-Pin(3 Tab) TO-220AB Tube
MOSFET N-Channel 800V 11A MDMESH TO220
Mosfet, N, To-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:150W Rohs Compliant: Yes |Stmicroelectronics STP11NM80
Power Field-Effect Transistor, 11A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP11NM80.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Number of Channels

Case Connection

Max Junction Temperature (Tj)

Configuration

Drain to Source Voltage (Vdss)

View Compare
STP11NM80

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-65°C~150°C TJ

Tube

MDmesh™

e3

Active

1 (Unlimited)

3

EAR99

400mOhm

Matte Tin (Sn)

ULTRA-LOW RESISTANCE

FET General Purpose Power

800V

MOSFET (Metal Oxide)

11A

STP11N

3

1

150W Tc

Single

ENHANCEMENT MODE

150W

22 ns

N-Channel

SWITCHING

400m Ω @ 5.5A, 10V

5V @ 250μA

1630pF @ 25V

11A Tc

43.6nC @ 10V

17ns

10V

±30V

15 ns

46 ns

11A

4V

TO-220AB

30V

800V

44A

400 mJ

9.15mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-
STP12NM50FP

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-65°C~150°C TJ

Tube

MDmesh™

e3

Active

1 (Unlimited)

3

-

350mOhm

Matte Tin (Sn) - annealed

AVALANCHE RATED

FET General Purpose Power

500V

MOSFET (Metal Oxide)

12A

STP12

3

1

35W Tc

Single

ENHANCEMENT MODE

35W

20 ns

N-Channel

SWITCHING

350m Ω @ 6A, 10V

5V @ 50μA

1000pF @ 25V

12A Tc

39nC @ 10V

10ns

10V

±30V

-

-

12A

4V

TO-220AB

30V

500V

48A

400 mJ

20mm

10.4mm

4.6mm

-

No

ROHS3 Compliant

Lead Free

1

ISOLATED

150°C

-

-

STP11NM80 vs STP12NM50FP
STP18NM60N

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II

-

Active

1 (Unlimited)

3

EAR99

285mOhm

-

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP18N

3

1

110W Tc

Single

ENHANCEMENT MODE

110W

12 ns

N-Channel

SWITCHING

285m Ω @ 6.5A, 10V

4V @ 250μA

1000pF @ 50V

13A Tc

35nC @ 10V

15ns

10V

±25V

25 ns

55 ns

13A

3V

TO-220AB

25V

600V

52A

-

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

STP11NM80 vs STP18NM60N
STP16N60M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

-

-

150°C TJ

Tube

MDmesh™ M2

-

Active

1 (Unlimited)

-

EAR99

-

-

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP16N

-

-

110W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

-

320m Ω @ 6A, 10V

4V @ 250μA

700pF @ 100V

12A Tc

19nC @ 10V

-

10V

±25V

-

-

12A

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

Single

600V

STP11NM80 vs STP16N60M2