STMicroelectronics STP10NK70Z

Name: STP10NK70Z
Brand: STMicroelectronics
SKU: 2849585-STP10NK70Z
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP10NK70Z

Manufacturer:: STMicroelectronics

Ventron No:: 2849585-STP10NK70Z

Description:: MOSFET N-CH 700V 8.6A TO-220

ECAD Model:

Datasheet:: STP10NK70Z

Specifications

STMicroelectronics STP10NK70Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP10NK70Z.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
700V
Technology
MOSFET (Metal Oxide)
Current Rating
8.6A
Base Part Number
STP10
Pin Count
3
Number of Elements
1
Power Dissipation-Max
150W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
150W
Turn On Delay Time
22 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
850m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
2000pF @ 25V
Current - Continuous Drain (Id) @ 25°C
8.6A Tc
Gate Charge (Qg) (Max) @ Vgs
90nC @ 10V
Rise Time
19ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
19 ns
Turn-Off Delay Time
46 ns
Continuous Drain Current (ID)
8.6A
Threshold Voltage
3.75V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain-source On Resistance-Max
0.85Ohm
Drain to Source Breakdown Voltage
700V
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP10NK70Z Description The STP10NK70Z is the result of a thorough optimization of ST's well-known strip-based PowerMESHTM topology. In addition to lowering on-resistance, special attention is paid to ensuring excellent dv/dt capability for the most demanding applications.
STP10NK70Z Features IMPROVED ESD CAPABILITY
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
VERY GOOD MANUFACTURING REPEABILITY
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
STP10NK70Z Applications HIGH CURRENT, HIGH-SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTOR,S AND PFC

STP10NK70Z More Descriptions

N-CHANNEL 700 V - 0.75 OHM - 8.6 A TO-220 ZENER-PROTECTED SuperMESH POWER MOSFET
Trans MOSFET N-CH 700V 8.6A 3-Pin (3 Tab) TO-220 Tube
Excalibur High-Speed Low-Power Precision Operational Amplifier 8-SOIC -40 to 85
Mosfet, N, To-220; Channel Type:N Channel; Drain Source Voltage Vds:700V; Continuous Drain Current Id:8.6A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:150W Rohs Compliant: Yes |Stmicroelectronics STP10NK70Z
Power Field-Effect Transistor, 8.6A I(D), 700V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP10NK70Z.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Resistance

Pulsed Drain Current-Max (IDM)

Height

Length

Width

Lifecycle Status

JESD-30 Code

Factory Lead Time

Additional Feature

Number of Channels

Case Connection

Avalanche Energy Rating (Eas)

Max Junction Temperature (Tj)

View Compare
STP10NK70Z

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

SuperMESH™

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

700V

MOSFET (Metal Oxide)

8.6A

STP10

3

1

150W Tc

Single

ENHANCEMENT MODE

150W

22 ns

N-Channel

SWITCHING

850m Ω @ 4.5A, 10V

4.5V @ 100μA

2000pF @ 25V

8.6A Tc

90nC @ 10V

19ns

10V

±30V

19 ns

46 ns

8.6A

3.75V

TO-220AB

30V

0.85Ohm

700V

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP16NK60Z

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

SuperMESH™

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

600V

MOSFET (Metal Oxide)

14A

STP16N

3

1

190W Tc

Single

ENHANCEMENT MODE

190W

30 ns

N-Channel

SWITCHING

420m Ω @ 7A, 10V

4.5V @ 50μA

2650pF @ 25V

14A Tc

86nC @ 10V

25ns

10V

±30V

15 ns

70 ns

14A

3.75V

TO-220AB

30V

-

600V

No SVHC

No

ROHS3 Compliant

Lead Free

38Ohm

56A

15.75mm

10.4mm

4.6mm

-

-

-

-

-

-

-

-

STP10NK70Z vs STP16NK60Z
STP180NS04ZC

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

SILICON

-55°C~175°C TJ

Tube

SAFeFET™

e3

-

Not For New Designs

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP180

3

1

330W Tc

Single

ENHANCEMENT MODE

300W

-

N-Channel

SWITCHING

4.2m Ω @ 40A, 10V

4V @ 1mA

4560pF @ 25V

120A Tc

110nC @ 10V

250ns

10V

±20V

115 ns

-

120A

-

TO-220AB

20V

0.0042Ohm

33V

-

No

ROHS3 Compliant

-

-

480A

-

-

-

NRND (Last Updated: 8 months ago)

R-PSFM-T3

-

-

-

-

-

-

STP10NK70Z vs STP180NS04ZC
STP12NM50FP

STMicroelectronics

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-65°C~150°C TJ

Tube

MDmesh™

e3

-

Active

1 (Unlimited)

3

-

Matte Tin (Sn) - annealed

FET General Purpose Power

500V

MOSFET (Metal Oxide)

12A

STP12

3

1

35W Tc

Single

ENHANCEMENT MODE

35W

20 ns

N-Channel

SWITCHING

350m Ω @ 6A, 10V

5V @ 50μA

1000pF @ 25V

12A Tc

39nC @ 10V

10ns

10V

±30V

-

-

12A

4V

TO-220AB

30V

-

500V

-

No

ROHS3 Compliant

Lead Free

350mOhm

48A

20mm

10.4mm

4.6mm

ACTIVE (Last Updated: 8 months ago)

-

16 Weeks

AVALANCHE RATED

1

ISOLATED

400 mJ

150°C

STP10NK70Z vs STP12NM50FP