STMicroelectronics STP10NK60ZFP
- Part Number:
- STP10NK60ZFP
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2483110-STP10NK60ZFP
- Description:
- MOSFET N-CH 600V 10A TO220FP
- ECAD Model:
-
- Datasheet:
- STP10NK60ZFP
STMicroelectronics STP10NK60ZFP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP10NK60ZFP.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSuperMESH™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance750mOhm
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryFET General Purpose Power
- Voltage - Rated DC600V
- TechnologyMOSFET (Metal Oxide)
- Current Rating10A
- Base Part NumberSTP10
- Pin Count3
- Number of Elements1
- Power Dissipation-Max35W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation35W
- Case ConnectionISOLATED
- Turn On Delay Time20 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs750m Ω @ 4.5A, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1370pF @ 25V
- Current - Continuous Drain (Id) @ 25°C10A Tc
- Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
- Rise Time20ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)30 ns
- Turn-Off Delay Time55 ns
- Continuous Drain Current (ID)10A
- Threshold Voltage3.75V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage600V
- Height9.3mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP10NK60ZFP Description
STP10NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed with SuperMESHTM technology, which optimizes the strip-based PowerMESHTM layout. Furthermore, this MOSFET is designed to ensure a high degree of dv/dt capability for applications that require a significant reduction in resistance. A lower power dissipation and improved gate charge meet the challenges of today's energy-efficient building code.
STP10NK60ZFP Features Zener-protected
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
STP10NK60ZFP Applications Inverter Circuits
DC-DC Converters
Inverters
Speed control of Motors
Battery Charger Circuits
Motor Controllers
STP10NK60ZFP Features Zener-protected
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
STP10NK60ZFP Applications Inverter Circuits
DC-DC Converters
Inverters
Speed control of Motors
Battery Charger Circuits
Motor Controllers
STP10NK60ZFP More Descriptions
Transistor: N-MOSFET; unipolar; 600V; 10A; 0.75ohm; 35W; -55 150 deg.C; THT; TO220FP
N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in TO-220FP package
Trans MOSFET N-CH 600V 10A 3-Pin(3 Tab) TO-220FP Tube / MOSFET N-CH 600V 10A TO220FP
Transistor NPN MOS STP10NK60/STP10NK60ZFP SGS THOMSON Ampere=10 V=600 TO220Halfin
STP10NK60ZFP STMicroelectronics N CHANNEL MOSFET,600V, 10A, TO-220FP RoHS
N-Channel 600 V 0.75 Ohm Flange Mount SuperMESH Power MosFet - TO-220-FP
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.65ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipat
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in TO-220FP package
Trans MOSFET N-CH 600V 10A 3-Pin(3 Tab) TO-220FP Tube / MOSFET N-CH 600V 10A TO220FP
Transistor NPN MOS STP10NK60/STP10NK60ZFP SGS THOMSON Ampere=10 V=600 TO220Halfin
STP10NK60ZFP STMicroelectronics N CHANNEL MOSFET,600V, 10A, TO-220FP RoHS
N-Channel 600 V 0.75 Ohm Flange Mount SuperMESH Power MosFet - TO-220-FP
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.65ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipat
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to STP10NK60ZFP.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyCurrent RatingBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreePbfree CodePulsed Drain Current-Max (IDM)Max Operating TemperatureMin Operating TemperatureAdditional FeatureNumber of ChannelsAvalanche Energy Rating (Eas)Max Junction Temperature (Tj)View Compare
-
STP10NK60ZFPACTIVE (Last Updated: 8 months ago)12 WeeksThrough HoleThrough HoleTO-220-3 Full Pack34.535924gSILICON-55°C~150°C TJTubeSuperMESH™e3Active1 (Unlimited)3EAR99750mOhmMatte Tin (Sn) - annealedFET General Purpose Power600VMOSFET (Metal Oxide)10ASTP103135W TcSingleENHANCEMENT MODE35WISOLATED20 nsN-ChannelSWITCHING750m Ω @ 4.5A, 10V4.5V @ 250μA1370pF @ 25V10A Tc70nC @ 10V20ns10V±30V30 ns55 ns10A3.75VTO-220AB30V600V9.3mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free--------- -
--Through HoleThrough HoleTO-220-33-SILICON150°C TJTubeSuperMESH™e3Obsolete1 (Unlimited)3EAR9938OhmMatte Tin (Sn)FET General Purpose Power600VMOSFET (Metal Oxide)14ASTP16N31190W TcSingleENHANCEMENT MODE190W-30 nsN-ChannelSWITCHING420m Ω @ 7A, 10V4.5V @ 50μA2650pF @ 25V14A Tc86nC @ 10V25ns10V±30V15 ns70 ns14A3.75VTO-220AB30V600V15.75mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Freeyes56A------
-
ACTIVE (Last Updated: 8 months ago)16 WeeksThrough HoleThrough HoleTO-220-33---TubeFDmesh™e3Active1 (Unlimited)3EAR99450mOhmTin (Sn)FET General Purpose Power600VMOSFET (Metal Oxide)11ASTP11N31160W TcSingleENHANCEMENT MODE160W-20 nsN-ChannelSWITCHING450m Ω @ 5.5A, 10V5V @ 250μA900pF @ 25V11A Tc40nC @ 10V16ns10V±30V15 ns-11A-TO-220AB30V600V15.75mm10.4mm4.6mm-NoROHS3 CompliantLead Free-44A150°C-65°CAVALANCHE RATED---
-
ACTIVE (Last Updated: 8 months ago)16 WeeksThrough HoleThrough HoleTO-220-3 Full Pack3-SILICON-65°C~150°C TJTubeMDmesh™e3Active1 (Unlimited)3-350mOhmMatte Tin (Sn) - annealedFET General Purpose Power500VMOSFET (Metal Oxide)12ASTP123135W TcSingleENHANCEMENT MODE35WISOLATED20 nsN-ChannelSWITCHING350m Ω @ 6A, 10V5V @ 50μA1000pF @ 25V12A Tc39nC @ 10V10ns10V±30V--12A4VTO-220AB30V500V20mm10.4mm4.6mm-NoROHS3 CompliantLead Free-48A--AVALANCHE RATED1400 mJ150°C
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
20 February 2024
LM358DR2G Operational Amplifier Symbol, Features, Applications and More
Ⅰ. Introduction to LM358DR2GⅡ. Technical parameters of LM358DR2GⅢ. Features of LM358DR2GⅣ. Symbol, footprint and pin configuration of LM358DR2GⅤ. Where is LM358DR2G used?Ⅵ. Circuit description of LM358DR2GⅦ. The difference... -
20 February 2024
MB6S Rectifier Bridge Specifications, Working Principle and Features
Ⅰ. Overview of MB6SⅡ. Specifications of MB6SⅢ. Working principle of MB6SⅣ. Circuit schematic diagram of MB6SⅤ. What are the features of MB6S?Ⅵ. Absolute maximum ratings of MB6SⅦ. How... -
21 February 2024
EPCS16SI8N Manufacturer, Market Trend, Application Fields and More
Ⅰ. Overview of EPCS16SI8NⅡ. Manufacturer of EPCS16SI8NⅢ. Specifications of EPCS16SI8NⅣ. Dimensions and package of EPCS16SI8NⅤ. Functional description of EPCS16SI8NⅥ. Application fields of EPCS16SI8NⅦ. Market trend of EPCS16SI8NⅧ. How... -
21 February 2024
What is the ADS1118IDGSR and How Does it Work?
Ⅰ. ADS1118IDGSR descriptionⅡ. Specifications of ADS1118IDGSRⅢ. Absolute maximum ratings of ADS1118IDGSRⅣ. How does ADS1118IDGSR work?Ⅴ. Package of ADS1118IDGSRⅥ. What are the characteristics of ADS1118IDGSR?Ⅶ. Typical application of ADS1118IDGSRⅧ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.