STP10N62K3

STMicroelectronics STP10N62K3

Part Number:
STP10N62K3
Manufacturer:
STMicroelectronics
Ventron No:
2849512-STP10N62K3
Description:
MOSFET N-CH 620V 8.4A TO220
ECAD Model:
Datasheet:
STP10N62K3

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Specifications
STMicroelectronics STP10N62K3 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP10N62K3.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    SuperMESH3™
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    680mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Base Part Number
    STP10
  • Pin Count
    3
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    125W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    125W
  • Turn On Delay Time
    14.5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    750m Ω @ 4A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1250pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    8.4A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    42nC @ 10V
  • Rise Time
    15ns
  • Drain to Source Voltage (Vdss)
    620V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    31 ns
  • Turn-Off Delay Time
    41 ns
  • Continuous Drain Current (ID)
    8.4A
  • Threshold Voltage
    3.75V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    650V
  • Avalanche Energy Rating (Eas)
    220 mJ
  • Nominal Vgs
    3.75 V
  • Height
    15.75mm
  • Length
    10.4mm
  • Width
    4.6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STP10N62K3 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 220 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1250pF @ 50V.This device has a continuous drain current (ID) of [8.4A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=650V, the drain-source breakdown voltage is 650V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 41 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 14.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 3.75V.In order to operate this transistor, a voltage of 620V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

STP10N62K3 Features
the avalanche energy rating (Eas) is 220 mJ
a continuous drain current (ID) of 8.4A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 41 ns
a threshold voltage of 3.75V
a 620V drain to source voltage (Vdss)


STP10N62K3 Applications
There are a lot of STMicroelectronics
STP10N62K3 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
STP10N62K3 More Descriptions
N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in TO-220 package
Trans MOSFET N-CH 620V 8.4A 3-Pin(3 Tab) TO-220 Tube
Power Field-Effect Transistor, 8.4A I(D), 620V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 620V, 8.4A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:8.4A; Drain Source Voltage Vds:620V; On Resistance Rds(on):0.68ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:125W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to 150°C
Product Comparison
The three parts on the right have similar specifications to STP10N62K3.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Base Part Number
    Pin Count
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Lifecycle Status
    Factory Lead Time
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Voltage - Rated DC
    Current Rating
    Element Configuration
    Pulsed Drain Current-Max (IDM)
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Case Connection
    View Compare
  • STP10N62K3
    STP10N62K3
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    SuperMESH3™
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    680mOhm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    STP10
    3
    1
    SINGLE WITH BUILT-IN DIODE
    125W Tc
    ENHANCEMENT MODE
    125W
    14.5 ns
    N-Channel
    SWITCHING
    750m Ω @ 4A, 10V
    4.5V @ 100μA
    1250pF @ 50V
    8.4A Tc
    42nC @ 10V
    15ns
    620V
    10V
    ±30V
    31 ns
    41 ns
    8.4A
    3.75V
    TO-220AB
    30V
    650V
    220 mJ
    3.75 V
    15.75mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP11NM60FD
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -
    Tube
    FDmesh™
    e3
    -
    Active
    1 (Unlimited)
    3
    EAR99
    450mOhm
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    STP11N
    3
    1
    -
    160W Tc
    ENHANCEMENT MODE
    160W
    20 ns
    N-Channel
    SWITCHING
    450m Ω @ 5.5A, 10V
    5V @ 250μA
    900pF @ 25V
    11A Tc
    40nC @ 10V
    16ns
    -
    10V
    ±30V
    15 ns
    -
    11A
    -
    TO-220AB
    30V
    600V
    -
    -
    15.75mm
    10.4mm
    4.6mm
    -
    No
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    150°C
    -65°C
    AVALANCHE RATED
    600V
    11A
    Single
    44A
    -
    -
    -
    -
    -
    -
  • STP16N60M2
    Through Hole
    Through Hole
    TO-220-3
    -
    -
    150°C TJ
    Tube
    MDmesh™ M2
    -
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    STP16N
    -
    -
    Single
    110W Tc
    ENHANCEMENT MODE
    -
    -
    N-Channel
    -
    320m Ω @ 6A, 10V
    4V @ 250μA
    700pF @ 100V
    12A Tc
    19nC @ 10V
    -
    600V
    10V
    ±25V
    -
    -
    12A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP150N3LLH6
    Through Hole
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~175°C TJ
    Tube
    DeepGATE™, STripFET™ VI
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    3.3MOhm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    STP150
    3
    1
    -
    110W Tc
    ENHANCEMENT MODE
    110W
    -
    N-Channel
    SWITCHING
    3.3m Ω @ 40A, 10V
    2.5V @ 250μA
    4040pF @ 25V
    80A Tc
    40nC @ 4.5V
    18ns
    -
    4.5V 10V
    ±20V
    46 ns
    75 ns
    80A
    -
    TO-220AB
    20V
    30V
    525 mJ
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    Single
    320A
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSFM-T3
    Not Qualified
    DRAIN
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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