STMicroelectronics STP10N62K3
- Part Number:
- STP10N62K3
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2849512-STP10N62K3
- Description:
- MOSFET N-CH 620V 8.4A TO220
- Datasheet:
- STP10N62K3
STMicroelectronics STP10N62K3 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP10N62K3.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSuperMESH3™
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance680mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Base Part NumberSTP10
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max125W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation125W
- Turn On Delay Time14.5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs750m Ω @ 4A, 10V
- Vgs(th) (Max) @ Id4.5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds1250pF @ 50V
- Current - Continuous Drain (Id) @ 25°C8.4A Tc
- Gate Charge (Qg) (Max) @ Vgs42nC @ 10V
- Rise Time15ns
- Drain to Source Voltage (Vdss)620V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)31 ns
- Turn-Off Delay Time41 ns
- Continuous Drain Current (ID)8.4A
- Threshold Voltage3.75V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage650V
- Avalanche Energy Rating (Eas)220 mJ
- Nominal Vgs3.75 V
- Height15.75mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP10N62K3 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 220 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1250pF @ 50V.This device has a continuous drain current (ID) of [8.4A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=650V, the drain-source breakdown voltage is 650V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 41 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 14.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 3.75V.In order to operate this transistor, a voltage of 620V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
STP10N62K3 Features
the avalanche energy rating (Eas) is 220 mJ
a continuous drain current (ID) of 8.4A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 41 ns
a threshold voltage of 3.75V
a 620V drain to source voltage (Vdss)
STP10N62K3 Applications
There are a lot of STMicroelectronics
STP10N62K3 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 220 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1250pF @ 50V.This device has a continuous drain current (ID) of [8.4A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=650V, the drain-source breakdown voltage is 650V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 41 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 14.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 3.75V.In order to operate this transistor, a voltage of 620V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
STP10N62K3 Features
the avalanche energy rating (Eas) is 220 mJ
a continuous drain current (ID) of 8.4A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 41 ns
a threshold voltage of 3.75V
a 620V drain to source voltage (Vdss)
STP10N62K3 Applications
There are a lot of STMicroelectronics
STP10N62K3 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
STP10N62K3 More Descriptions
N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in TO-220 package
Trans MOSFET N-CH 620V 8.4A 3-Pin(3 Tab) TO-220 Tube
Power Field-Effect Transistor, 8.4A I(D), 620V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 620V, 8.4A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:8.4A; Drain Source Voltage Vds:620V; On Resistance Rds(on):0.68ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:125W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to 150°C
Trans MOSFET N-CH 620V 8.4A 3-Pin(3 Tab) TO-220 Tube
Power Field-Effect Transistor, 8.4A I(D), 620V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 620V, 8.4A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:8.4A; Drain Source Voltage Vds:620V; On Resistance Rds(on):0.68ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:125W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to 150°C
The three parts on the right have similar specifications to STP10N62K3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionBase Part NumberPin CountNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeLifecycle StatusFactory Lead TimeMax Operating TemperatureMin Operating TemperatureAdditional FeatureVoltage - Rated DCCurrent RatingElement ConfigurationPulsed Drain Current-Max (IDM)Peak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusCase ConnectionView Compare
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STP10N62K3Through HoleThrough HoleTO-220-33SILICON-55°C~150°C TJTubeSuperMESH3™e3yesObsolete1 (Unlimited)3EAR99680mOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)SINGLESTP1031SINGLE WITH BUILT-IN DIODE125W TcENHANCEMENT MODE125W14.5 nsN-ChannelSWITCHING750m Ω @ 4A, 10V4.5V @ 100μA1250pF @ 50V8.4A Tc42nC @ 10V15ns620V10V±30V31 ns41 ns8.4A3.75VTO-220AB30V650V220 mJ3.75 V15.75mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free----------------
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Through HoleThrough HoleTO-220-33--TubeFDmesh™e3-Active1 (Unlimited)3EAR99450mOhmTin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)-STP11N31-160W TcENHANCEMENT MODE160W20 nsN-ChannelSWITCHING450m Ω @ 5.5A, 10V5V @ 250μA900pF @ 25V11A Tc40nC @ 10V16ns-10V±30V15 ns-11A-TO-220AB30V600V--15.75mm10.4mm4.6mm-NoROHS3 CompliantLead FreeACTIVE (Last Updated: 8 months ago)16 Weeks150°C-65°CAVALANCHE RATED600V11ASingle44A------
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Through HoleThrough HoleTO-220-3--150°C TJTubeMDmesh™ M2--Active1 (Unlimited)-EAR99--FET General Purpose PowerMOSFET (Metal Oxide)-STP16N--Single110W TcENHANCEMENT MODE--N-Channel-320m Ω @ 6A, 10V4V @ 250μA700pF @ 100V12A Tc19nC @ 10V-600V10V±25V--12A-----------ROHS3 Compliant-ACTIVE (Last Updated: 8 months ago)16 Weeks-------------
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Through HoleThrough HoleTO-220-3-SILICON-55°C~175°C TJTubeDeepGATE™, STripFET™ VIe3-Obsolete1 (Unlimited)3EAR993.3MOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)-STP15031-110W TcENHANCEMENT MODE110W-N-ChannelSWITCHING3.3m Ω @ 40A, 10V2.5V @ 250μA4040pF @ 25V80A Tc40nC @ 4.5V18ns-4.5V 10V±20V46 ns75 ns80A-TO-220AB20V30V525 mJ------ROHS3 CompliantLead Free-------Single320ANOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSFM-T3Not QualifiedDRAIN
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