STMicroelectronics STP100N6F7

Name: STP100N6F7
Brand: STMicroelectronics
SKU: 3813653-STP100N6F7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP100N6F7

Manufacturer:: STMicroelectronics

Ventron No:: 3813653-STP100N6F7

Description:: MOSFET N-CH 60V 100A F7 TO220AB

ECAD Model:

Datasheet:: STP100N6F7

Specifications

STMicroelectronics STP100N6F7 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP100N6F7.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
22 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™ F7
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP100
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
125W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5.6m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1980pF @ 25V
Current - Continuous Drain (Id) @ 25°C
100A Tc
Gate Charge (Qg) (Max) @ Vgs
30nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
100A
JEDEC-95 Code
TO-220AB
Drain-source On Resistance-Max
0.0056Ohm
Pulsed Drain Current-Max (IDM)
400A
DS Breakdown Voltage-Min
60V
Avalanche Energy Rating (Eas)
200 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP100N6F7 Description
STP100N6F7 is a type of N-channel STripFET? power MOSFET provided by STMicroelectronics based on its unique STripFET? F7 technology. Its ability to minimize input capacitance and gate charge makes it well suited for use as a primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer application. Moreover, it is also ideally suitable for applications requiring a low gate charge drive.

STP100N6F7 Features
Low gate charge
Fast switching speed
Unique STripFET process
Excellent dv/dt capability
Available in the TO-220 package

STP100N6F7 Applications
Switching applications
High-efficiency isolated DC-DC converters
Applications requiring low gate charge drive

STP100N6F7 More Descriptions

N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a TO-220 package
Trans MOSFET N-CH 60V 100A 3-Pin(3 Tab) TO-220AB Tube
Mosfet, N-Ch, 60V, 100A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STP100N6F7
Power Field-Effect Transistor, 100A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP100N6F7.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

JEDEC-95 Code

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Number of Pins

JESD-609 Code

Pbfree Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Current Rating

Pin Count

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

Reach Compliance Code

Qualification Status

Additional Feature

Number of Channels

Max Junction Temperature (Tj)

View Compare
STP100N6F7

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

22 Weeks

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~175°C TJ

Tube

STripFET™ F7

Active

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

SINGLE

NOT SPECIFIED

NOT SPECIFIED

STP100

R-PSFM-T3

1

SINGLE WITH BUILT-IN DIODE

125W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

5.6m Ω @ 50A, 10V

4V @ 250μA

1980pF @ 25V

100A Tc

30nC @ 10V

60V

10V

±20V

100A

TO-220AB

0.0056Ohm

400A

60V

200 mJ

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP16NK60Z

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

SILICON

150°C TJ

Tube

SuperMESH™

Obsolete

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

-

-

-

STP16N

-

1

-

190W Tc

ENHANCEMENT MODE

-

N-Channel

SWITCHING

420m Ω @ 7A, 10V

4.5V @ 50μA

2650pF @ 25V

14A Tc

86nC @ 10V

-

10V

±30V

14A

TO-220AB

-

56A

-

-

ROHS3 Compliant

Lead Free

3

e3

yes

38Ohm

Matte Tin (Sn)

FET General Purpose Power

600V

14A

3

Single

190W

30 ns

25ns

15 ns

70 ns

3.75V

30V

600V

15.75mm

10.4mm

4.6mm

No SVHC

No

-

-

-

-

-

STP100N6F7 vs STP16NK60Z
STP16NS25

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

SILICON

-65°C~150°C TJ

Tube

MESH OVERLAY™

Obsolete

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

-

NOT SPECIFIED

NOT SPECIFIED

STP16N

-

1

-

140W Tc

ENHANCEMENT MODE

-

N-Channel

SWITCHING

280m Ω @ 8A, 10V

4V @ 250μA

1270pF @ 25V

16A Tc

83nC @ 10V

-

10V

±20V

16A

TO-220AB

0.28Ohm

64A

-

600 mJ

ROHS3 Compliant

-

3

e3

-

-

Matte Tin (Sn)

FET General Purpose Power

250V

16A

3

Single

140W

-

26ns

32 ns

-

-

20V

250V

-

-

-

-

-

not_compliant

Not Qualified

-

-

-

STP100N6F7 vs STP16NS25
STP12NM50FP

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

SILICON

-65°C~150°C TJ

Tube

MDmesh™

Active

1 (Unlimited)

3

-

MOSFET (Metal Oxide)

-

-

-

STP12

-

1

-

35W Tc

ENHANCEMENT MODE

ISOLATED

N-Channel

SWITCHING

350m Ω @ 6A, 10V

5V @ 50μA

1000pF @ 25V

12A Tc

39nC @ 10V

-

10V

±30V

12A

TO-220AB

-

48A

-

400 mJ

ROHS3 Compliant

Lead Free

3

e3

-

350mOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

500V

12A

3

Single

35W

20 ns

10ns

-

-

4V

30V

500V

20mm

10.4mm

4.6mm

-

No

-

-

AVALANCHE RATED

1

150°C

STP100N6F7 vs STP12NM50FP