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STGW60V60DF

STMicroelectronics STGW60V60DF

Part Number:
STGW60V60DF
Manufacturer:
STMicroelectronics
Ventron No:
3587273-STGW60V60DF
Description:
IGBT 600V 80A 375W TO247
ECAD Model:
Datasheet:
STGW60V60DF

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Specifications
STMicroelectronics STGW60V60DF technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW60V60DF.
  • Factory Lead Time
    20 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    375W
  • Base Part Number
    STGW60
  • Element Configuration
    Single
  • Power Dissipation
    375W
  • Input Type
    Standard
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    80A
  • Reverse Recovery Time
    74ns
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.35V
  • Test Condition
    400V, 60A, 4.7 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.3V @ 15V, 60A
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    334nC
  • Current - Collector Pulsed (Icm)
    240A
  • Td (on/off) @ 25°C
    60ns/208ns
  • Switching Energy
    750μJ (on), 550μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Height
    20.15mm
  • Length
    15.75mm
  • Width
    5.15mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STGW60V60DF Overview
This product is manufactured by STMicroelectronics and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet STGW60V60DF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of STGW60V60DF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
STGW60V60DF More Descriptions
Trench gate field-stop IGBT, V series 600 V, 60 A very high speed
Trans IGBT Chip N-CH 600V 120A 375000mW 3-Pin(3 Tab) TO-247 Tube
STGW Series Advanced Trench Gate Field Stop Through Hole IGBT - TO-247-2
IGBT Transistors 600V 60A High Speed Trench Gate IGBT
Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel
IGBT Trench gate,600V 60A/100 deg,TO247
375W 80A 600V Trench Field Stop TO-247 IGBTs ROHS
Igbt, Single, 600V, 80A, To-247-3; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:375W; Collector Emitter Voltage V(Br)Ceo:600V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Stmicroelectronics STGW60V60DF
STMICROELECTRONICS STGW60V60DF
Product Comparison
The three parts on the right have similar specifications to STGW60V60DF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Subcategory
    Max Power Dissipation
    Base Part Number
    Element Configuration
    Power Dissipation
    Input Type
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Transistor Element Material
    Number of Terminations
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Case Connection
    Power - Max
    Transistor Application
    Voltage - Collector Emitter Breakdown (Max)
    Turn On Time
    Turn Off Time-Nom (toff)
    Lifecycle Status
    Weight
    Gate-Emitter Thr Voltage-Max
    Series
    JESD-609 Code
    Pbfree Code
    Terminal Finish
    Voltage - Rated DC
    Current Rating
    Pin Count
    Turn On Delay Time
    Rise Time
    Drain to Source Voltage (Vdss)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Input Capacitance
    Continuous Collector Current
    View Compare
  • STGW60V60DF
    STGW60V60DF
    STMicroelectronics
    20 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    375W
    STGW60
    Single
    375W
    Standard
    N-CHANNEL
    600V
    80A
    74ns
    600V
    2.35V
    400V, 60A, 4.7 Ω, 15V
    2.3V @ 15V, 60A
    Trench Field Stop
    334nC
    240A
    60ns/208ns
    750μJ (on), 550μJ (off)
    20V
    20.15mm
    15.75mm
    5.15mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGW40S120DF3
    STGW40S120DF3
    STMicroelectronics
    41 Weeks
    Surface Mount
    Through Hole
    TO-247-3
    -
    -55°C~175°C TJ
    Tube
    Active
    Not Applicable
    EAR99
    -
    468W
    STGW40
    -
    -
    Standard
    N-CHANNEL
    2.15V
    80A
    355 ns
    1.2kV
    -
    600V, 40A, 15 Ω, 15V
    2.15V @ 15V, 40A
    Trench Field Stop
    129nC
    160A
    35ns/148ns
    1.43mJ (on), 3.83mJ (off)
    -
    -
    -
    -
    No SVHC
    -
    ROHS3 Compliant
    -
    SILICON
    3
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    1
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    468W
    POWER CONTROL
    1200V
    50 ns
    158.46 ns
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STGW60V60DF vs STGW40S120DF3
  • STGW40M120DF3
    STGW40M120DF3
    STMicroelectronics
    30 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    468W
    STGW40
    Single
    -
    Standard
    N-CHANNEL
    1.2kV
    80A
    355 ns
    1.2kV
    1.85V
    600V, 40A, 10 Ω, 15V
    2.3V @ 15V, 40A
    Trench Field Stop
    125nC
    160A
    35ns/140ns
    1.5mJ (on), 2.25mJ (off)
    20V
    -
    -
    -
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    468W
    -
    1200V
    -
    -
    ACTIVE (Last Updated: 8 months ago)
    38.000013g
    7V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STGW60V60DF vs STGW40M120DF3
  • STGW40NC60WD
    STGW40NC60WD
    STMicroelectronics
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -55°C~150°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    250W
    STGW40
    Single
    250W
    Standard
    N-CHANNEL
    600V
    70A
    45 ns
    600V
    2.1V
    390V, 30A, 10 Ω, 15V
    2.5V @ 15V, 30A
    -
    126nC
    230A
    33ns/168ns
    302μJ (on), 349μJ (off)
    20V
    20.15mm
    15.75mm
    5.15mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    SILICON
    3
    -
    -
    -
    -
    1
    -
    -
    -
    POWER CONTROL
    -
    46 ns
    280 ns
    -
    38.000013g
    5.75V
    PowerMESH™
    e3
    yes
    Tin (Sn)
    600V
    40A
    3
    33 ns
    12ns
    650V
    168 ns
    40A
    TO-247AC
    2.9nF
    40A
    STGW60V60DF vs STGW40NC60WD
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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